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BibTex format

@inproceedings{Mifsud:2022:10.1109/iscas48785.2022.9937343,
author = {Mifsud, A and Shen, J and Feng, P and Xie, L and Wang, C and Pan, Y and Maheshwari, S and Agwa, S and Stathopoulos, S and Wang, S and Serb, A and Papavassiliou, C and Prodromakis, T and Constandinou, TG},
doi = {10.1109/iscas48785.2022.9937343},
pages = {75--79},
publisher = {IEEE},
title = {A CMOS-based characterisation platform for emerging RRAM technologies},
url = {http://dx.doi.org/10.1109/iscas48785.2022.9937343},
year = {2022}
}

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TY  - CPAPER
AB  - Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device’s resistance range to be between 1kΩ and 10MΩ with a minimum voltage range of ±1.5V on the device.
AU  - Mifsud,A
AU  - Shen,J
AU  - Feng,P
AU  - Xie,L
AU  - Wang,C
AU  - Pan,Y
AU  - Maheshwari,S
AU  - Agwa,S
AU  - Stathopoulos,S
AU  - Wang,S
AU  - Serb,A
AU  - Papavassiliou,C
AU  - Prodromakis,T
AU  - Constandinou,TG
DO  - 10.1109/iscas48785.2022.9937343
EP  - 79
PB  - IEEE
PY  - 2022///
SP  - 75
TI  - A CMOS-based characterisation platform for emerging RRAM technologies
UR  - http://dx.doi.org/10.1109/iscas48785.2022.9937343
UR  - https://ieeexplore.ieee.org/document/9937343
UR  - http://hdl.handle.net/10044/1/101213
ER  -

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Dr Peilong Feng

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