Imperial College London
Dr Richard Chater

DrRichardChater

Faculty of Engineering, Department of Materials

Instrumentation Research Fellow, Surface Analysis
 
 
 
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Contact

 

+44 (0)20 7594 6740r.chater

 
 
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Location

 

LG62ARoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

171 results found

NEJIM A, MARSH CD, GILES LF, HEMMENT PLF, LI Y, CHATER RJ, KILNER JA, BOOKER GRet al., 1994, AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX, Symposium on Materials Aspects of Ion Beam Synthesis: Phase Formation and Modification, at the Spring Meeting of the European-Materials-Society, Publisher: ELSEVIER SCIENCE BV, Pages: 248-253, ISSN: 0168-583X

Conference paper

KILNER JA, BEYER GP, CHATER RJ, 1994, O-18 STUDIES OF ALTERED LAYERS FORMED IN SI AND SIO2 BY ION-BOMBARDMENT, Symposium on Materials Aspects of Ion Beam Synthesis: Phase Formation and Modification, at the Spring Meeting of the European-Materials-Society, Publisher: ELSEVIER SCIENCE BV, Pages: 176-180, ISSN: 0168-583X

Conference paper

LI YP, KILNER JA, CHATER RJ, NEJIM A, HEMMENT PLF, MARSH CD, BOOKER GRet al., 1993, OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18+ SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH-TEMPERATURE ANNEALING, APPLIED PHYSICS LETTERS, Vol: 63, Pages: 2812-2814, ISSN: 0003-6951

Journal article

LI Y, KILNER JA, CHATER RJ, NEJIM A, HEMMENT PLF, TATE TJet al., 1993, AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C, JOURNAL OF APPLIED PHYSICS, Vol: 74, Pages: 82-85, ISSN: 0021-8979

Journal article

LI Y, KILNER JA, CHATER RJ, HEMMENT PLF, NEJIM A, ROBINSON AK, REESON KJ, MARSH CD, BOOKER GRet al., 1993, THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 140, Pages: 1780-1786, ISSN: 0013-4651

Journal article

LIN C, LI Y, KILNER JA, CHATER RJ, LI J, NEJIM A, ZHANG JP, HEMMENT PLFet al., 1993, INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL, 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS, Publisher: ELSEVIER SCIENCE BV, Pages: 323-326, ISSN: 0168-583X

Conference paper

NEJIM A, LI Y, MARSH CD, HEMMENT PLF, CHATER RJ, KILNER JA, BOOKER GRet al., 1993, DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION, 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS, Publisher: ELSEVIER SCIENCE BV, Pages: 822-826, ISSN: 0168-583X

Conference paper

NEJIM A, LI Y, MARSH CD, HEMMENT PLF, CHATER RJ, KILNER JA, GILES LF, BOOKER GRet al., 1993, PROCESS OPTIMIZATION FOR DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES USING 90 KEV OXYGEN IMPLANTATION, 9TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY, Publisher: ELSEVIER SCIENCE BV, Pages: 170-174, ISSN: 0168-583X

Conference paper

MARSH CD, NEJIM A, LI Y, BOOKER GR, HEMMENT PLF, CHATER RJ, KILNER JAet al., 1993, CONTROL OF THE BURIED SIO2 LAYER THICKNESS AND SI DEFECT DENSITY IN SIMOX SUBSTRATES - STRUCTURAL INVESTIGATION AND PROCESS OPTIMIZATION, 9TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY, Publisher: ELSEVIER SCIENCE BV, Pages: 197-203, ISSN: 0168-583X

Conference paper

ROBINSON AK, LI Y, MARSH CD, CHATER RJ, HEMMENT PLF, KILNER JA, BOOKER GRet al., 1992, LOW-ENERGY, OXYGEN DOSE OPTIMIZATION FOR THIN-FILM SEPARATION BY IMPLANTED OXYGEN, SYMP AT THE 1991 SPRING MEETING OF THE EUROPEAN MATERIALS RESEARCH SOC : ION BEAM SYNTHESIS OF COMPOUND AND ELEMENTAL LAYERS, Publisher: ELSEVIER SCIENCE SA LAUSANNE, Pages: 41-45, ISSN: 0921-5107

Conference paper

HATZOPOULOS N, CHATER R, BUSSMANN U, HEMMENT PLF, KILNER JAet al., 1992, THE EFFECT OF DOSE AND TEMPERATURE ON THE AS-IMPLANTED MICROSTRUCTURE OF OXYGEN-IMPLANTED SILICON, SYMP AT THE 1991 SPRING MEETING OF THE EUROPEAN MATERIALS RESEARCH SOC : ION BEAM SYNTHESIS OF COMPOUND AND ELEMENTAL LAYERS, Publisher: ELSEVIER SCIENCE SA LAUSANNE, Pages: 37-40, ISSN: 0921-5107

Conference paper

CARTER S, SELCUK A, CHATER RJ, KAJDA J, KILNER JA, STEELE BCHet al., 1992, OXYGEN-TRANSPORT IN SELECTED NONSTOICHIOMETRIC PEROVSKITE-STRUCTURE OXIDES, Publisher: ELSEVIER SCIENCE BV, Pages: 597-605, ISSN: 0167-2738

Conference paper

CHATER RJ, CARTER S, KILNER JA, STEELE BCHet al., 1992, DEVELOPMENT OF A NOVEL SIMS TECHNIQUE FOR OXYGEN SELF-DIFFUSION AND SURFACE EXCHANGE COEFFICIENT MEASUREMENTS IN OXIDES OF HIGH DIFFUSIVITY, Publisher: ELSEVIER SCIENCE BV, Pages: 859-867, ISSN: 0167-2738

Conference paper

Marsh CD, Booker GR, Nejim A, Giles LF, Hemment PLF, Li Y, Chater RJ, Kilner JA, Wainwright S, Hall Set al., 1992, Identification of optimal doses for device quality thin-film and standard SIMOX structures formed by low energy (50keV, 80 keV or 90 keV) or high (200 keV) energy oxygen implantation

Conference paper

LI Y, KILNER JA, CHATER RJ, TATE TJ, HEMMENT PLF, NEJIM Aet al., 1992, AN INVESTIGATION OF BURIED LAYER FORMATION BY 40KEV OXYGEN IMPLANTATION INTO SILICON, SYMP ON PHASE FORMATION AND MODIFICATION BY BEAM-SOLID INTERACTIONS, AT THE 1991 FALL MEETING OF THE MATERIALS RESEARCH SOC, Publisher: MATERIALS RESEARCH SOC, Pages: 115-120

Conference paper

BREDIKHIN SI, EMELCHENKO GA, SHECHTMAN VS, ZHOKHOV AA, CARTER S, CHATER RJ, KILNER JA, STEELE BCHet al., 1991, ANISOTROPY OF OXYGEN SELF-DIFFUSION IN YBA2CU3O7-DELTA SINGLE-CRYSTALS, PHYSICA C, Vol: 179, Pages: 286-290, ISSN: 0921-4534

Journal article

SCANLON PJ, HEMMENT PLF, REESON KJ, ROBINSON AK, KILNER JA, CHATER RJ, HARBEKE Get al., 1991, OXYGEN RICH SIMOX, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 6, Pages: 730-734, ISSN: 0268-1242

Journal article

REESON KJ, CRIDDLE AJ, PEARSON P, CHATER RJ, CHRISTENSEN K, ALDERMAN J, BOOKER GR, KILNER JAet al., 1991, MICROSCOPE-SPECTROPHOTOMETRIC ANALYSIS TO DETERMINE THE ORIGINS OF THE COLOR VARIATIONS ON SIMOX WAFERS, 8TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY, Publisher: ELSEVIER SCIENCE BV, Pages: 718-724, ISSN: 0168-583X

Conference paper

CHATER RJ, KILNER JA, REESON KJ, ROBINSON AK, HEMMENT PLFet al., 1991, HIGH-DOSE OXYGEN IMPLANTATION INTO SILICA, 8TH INTERNATIONAL CONF ON ION IMPLANTATION TECHNOLOGY, Publisher: ELSEVIER SCIENCE BV, Pages: 686-690, ISSN: 0168-583X

Conference paper

MEEKISON CD, BOOKER GR, REESON KJ, HEMMENT PLF, PEART RF, CHATER RJ, KILNER JA, DAVIS JRet al., 1991, A TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF THE DOSE DEPENDENCE OF THE MICROSTRUCTURE OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION OF SILICON, JOURNAL OF APPLIED PHYSICS, Vol: 69, Pages: 3503-3511, ISSN: 0021-8979

Journal article

CHATER RJ, KILNER JA, REESON KJ, ROBINSON AK, HEMMENT PLFet al., 1990, O-18 ISOTOPE STUDIES ON THE REDISTRIBUTION OF OXYGEN IN NONCONTINUOUS BURIED LAYERS FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION, 9TH INTERNATIONAL CONF ON ION BEAM ANALYSIS, Publisher: ELSEVIER SCIENCE BV, Pages: 110-114, ISSN: 0168-583X

Conference paper

GRIFFIN CJ, KILNER JA, CHATER RJ, STATONBEVAN A, REESON KJ, HEMMENT PLF, DAVIS JRet al., 1989, A SIMS AND TEM ANALYSIS OF THE GROWTH MECHANISMS OF ANNEALED BURIED SIO2 LAYERS FORMED BY INCREMENTAL HIGH-DOSE OXYGEN ION-IMPLANTATION INTO SILICON AT 150 KEV, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 39, Pages: 215-219, ISSN: 0168-583X

Journal article

KILNER JA, CHATER RJ, REESON KJ, HEMMENT PLF, DAVIS JRet al., 1989, N-15 ISOTOPE TRACER STUDIES OF BURIED NITRIDE LAYER FORMATION BY HIGH-DOSE IMPLANTATION, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 39, Pages: 225-229, ISSN: 0168-583X

Journal article

HEMMENT PLF, REESON KJ, ROBINSON AK, STOEMENOS J, KILNER JA, CHATER RJ, CELLER GK, DAVIS JRet al., 1989, NUCLEATION AND GROWTH OF SIO2 PRECIPITATES IN SOI SIMOX RELATED MATERIALS - DEPENDENCE UPON DAMAGE AND ATOMIC OXYGEN PROFILES, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 39, Pages: 210-214, ISSN: 0168-583X

Journal article

HEMMENT PLF, REESON KJ, ROBINSON AK, KILNER JA, CHATER RJ, MARSH CD, CHRISTENSEN KN, DAVIS JRet al., 1989, NONPLANAR AND NONCONTINUOUS BURIED LAYERS OF SIO2 IN SILICON FORMED BY ION-BEAM SYNTHESIS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 37-8, Pages: 766-769, ISSN: 0168-583X

Journal article

DEVEIRMAN A, REESON KJ, CHATER RJ, VANLANDUYT J, HEMMENT PLF, KILNER JA, MAES HEet al., 1989, TEM STUDY OF BURIED SILICON OXYNITRIDE LAYERS, INSTITUTE OF PHYSICS CONFERENCE SERIES, Pages: 563-568, ISSN: 0951-3248

Journal article

DEVEIRMAN A, REESON KJ, CHATER RJ, VANLANDUYT J, HEMMENT PLF, KILNER JA, MAES HEet al., 1989, TEM STUDY OF BURIED SILICON OXYNITRIDE LAYERS, CONF ON MICROSCOPY OF SEMICONDUCTING MATERIALS, Publisher: IOP PUBLISHING LTD, Pages: 563-568

Conference paper

Godfrey DJ, Chater R, Robinson AK, Augustus PD, Alderman JR, Davis JR, Kilner J, Hemment PLFet al., 1988, Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers.

The diffusion of arsenic and boron in oxygen-implanted SOI layers has been studied using secondary ion mass spectrometry (SIMS), Rutherford backscattering spectroscopy (RBS), spreading resistance profiling (SRP), and transmission electron microscopy (TEM). A SIMOX (separation by implantation of oxygen) was produced, and then a 27-nm oxide layer was grown prior to implantation of either arsenic (80 keV, 5×1015cm-2) or boron (15 keV, 2×1015cm-2). The samples were annealed at 900°C for 10 min, 30 min, and 120 min in an inert ambient and analyzed using the above techniques. The experimental results have been compared with process modeling simulations where diffusion behavior appropriate to bulk silicon has been incorporated. It has been found that by using appropriate implant and anneal schedules it is possible to produce SIMOX material where the quality of the silicon overlayer allows the majority of diffusion behavior to be predicted using such models.

Conference paper

Robinson AK, Reeson KJ, Hemment PLF, Thomas N, Davis JR, Christensen KN, Marsh C, Booker GR, Kilner JA, Chater RJet al., 1988, Total dielectric isolation (TDI) of silicon device islands by a single O<sup>+</sup> implantation stage.

It has recently been shown that SIMOX (separation by implantation of oxygen) technology can be extended to provide both vertical and lateral isolation of device islands by a single implantation stage. This technology (TDI) entails implantation of O+ ions through a deposited masking layer of SiO2 in which windows are opened to define the silicon device islands. However, the structures had detrimental characteristics (e.g., nonplanar surfaces and entrapped silicon islands in the synthesized SiO2) that detracted from the utility of the technique. A process is reported that produces improved structures, which are suitable for application to circuits.

Conference paper

JAGER HU, KILNER JA, CHATER RJ, HEMMENT PLF, PEART RF, REESON KJet al., 1988, MODELING OF O-18 TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF SIO2 LAYERS BY HIGH-DOSE IMPLANTATION, THIN SOLID FILMS, Vol: 161, Pages: 333-342, ISSN: 0040-6090

Journal article

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