DrRichardChater

REESON KJ, HEMMENT PLF, MEEKISON CD, MARSH CD, BOOKER GR, CHATER RJ, KILNER JA, DAVIS Jet al., 1988, BURIED LAYERS OF SILICON OXY-NITRIDE FABRICATED USING ION-BEAM SYNTHESIS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 32, Pages: 427-432, ISSN: 0168-583X

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• Citations: 21

Reeson KJ, Robinson AK, Hemment PLF, Marsh CD, Christensen KN, Booker GR, Chater RJ, Kilner JA, Harbeke G, Steigmeir EF, Celler GKet al., 1988, The role of implantation temperature and dose in the control of the microstructure of SIMOX structures, Microelectronic Engineering, Vol: 8, Pages: 163-186, ISSN: 0167-9317

Single-crystal {leftwards paired arrows}100{left arrow, hooked} silicon wafers have been implanted with 200 keV oxygen ions over a dose range of 0.1×1018 O+ cm-2 to 1.4×1018 O+ cm-2 and a temperature range of ≈250°C to 550°C. The specimens have been analyzed, both before and after high-temperature annealing, using a variety of techniques, such as cross-sectional and planar Transmission Electron Microscopy (TEM), Rutherford backscattering (RBS), and ion channelling, Secondary Ion Mass Spectroscopy (SIMS), Infra-red Spectroscopy (IR), and Raman Spectroscopy. This has enabled us to evaluate the development of the SIMOX structure both with respect to implantation temperature and dose and also with respect to annealing temperature and time. © 1988.

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• Citations: 49

JAGER HU, KILNER JA, CHATER RJ, HEMMENT PLF, PEART RF, REESON KJet al., 1988, MODELING OF O-18 TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF SIO2 LAYERS BY HIGH-DOSE IMPLANTATION, INTERNATIONAL CONF ON ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS ( EPM 87 ), Publisher: AKADEMIE-VERLAG, Pages: 430-432

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CHATER RJ, KILNER JA, SCHEID E, CRISTOLOVENEAU S, HEMMENT PLF, REESON KJet al., 1987, OPTICAL AND COMPOSITIONAL STUDIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY HIGH-DOSE IMPLANTATION, APPLIED SURFACE SCIENCE, Vol: 30, Pages: 390-396, ISSN: 0169-4332

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• Citations: 8

REESON KJ, HEMMENT PLF, MEEKISON CD, BOOKER GR, KILNER JA, CHATER RJ, DAVIS JR, CELLER GKet al., 1987, IMPROVED QUALITY SI-ON-SI3N4 STRUCTURES BY ION-BEAM SYNTHESIS AND LAMP ANNEALING, APPLIED PHYSICS LETTERS, Vol: 50, Pages: 1882-1884, ISSN: 0003-6951

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• Citations: 10

HEMMENT PLF, REESON KJ, KILNER JA, CHATER RJ, MARSH C, BOOKER GR, DAVIS JR, CELLER GKet al., 1987, NOVEL DIELECTRIC SILICON PLANAR STRUCTURES FORMED BY ION-BEAM SYNTHESIS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 21, Pages: 129-133, ISSN: 0168-583X

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• Citations: 26

CHATER RJ, KILNER JA, HEMMENT PLF, REESON KJ, DAVIS JRet al., 1987, THE EVOLUTION OF THE SI/SIO2 INTERFACE IN BURIED OXIDE LAYERS FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 19-20, Pages: 290-293, ISSN: 0168-583X

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• Citations: 14

Marsh CD, Booker GR, Reeson KJ, Hemment PLF, Chater RJ, Kilner JA, Alderman JA, Celler Get al., 1986, INFLUENCE OF HIGH TEMPERATURE ANNEALS ON THE MICROSTRUCTURE OF SILICON ON INSULATOR STRUCTURES FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON., Pages: 137-145

Buried oxide layers, for silicon on insulator (SOI) structures, have been formed by high-dose oxygen implantation into silicon. Float-zone (100) wafers were implanted in the dose range 0. 25 to 1. 8 multiplied by 10**1**8 O** plus /cm**2 with 200 KeV O** plus ions at 500 degree C. The samples were subsequently annealed (furnace or incoherent lamp heater) in the range 1200 to 1405 degree C, for up to 24 hours. Examination by TEM, SIMS & RBS showed that improvements in microstructure were brought about by either high-temperature anneals for typically 2 hours or a 1250 degree C anneal for up to 24 hours. Furthermore by annealing at 1405 degree C it is shown that a dose as low as 0. 6 multiplied by 10**1**8 O** plus /cm**2 will form a continuous buried oxide layer below a good quality silicon layer.

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• Citations: 1

Chater RJ, Kilner JA, Hemment PLF, Reeson KJ, Peart RFet al., 1986, MASS TRANSPORT STUDIES OF BURIED LAYER FORMATION BY HIGH DOSE IMPLANTATION INTO SILICON., Pages: 652-666, ISSN: 0161-6374

SOI substrates for VLSI applications may be fabricated by the implantation of high doses of reactive ions such as O//2** plus and N//2** plus into silicon, followed by a high temperature anneal. Information and tests are required for verifying models describing mass transport occurring during the formation of these layers and redistribution upon annealing. We report experiments to study buried layer formation using implantation of stable isotopes with concentration depth profiling by SIMS.

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• Citations: 7

KILNER JA, CHATER RJ, HEMMENT PLF, PEART RF, REESON KJ, ARROWSMITH RP, DAVIS JRet al., 1986, SIMS ANALYSIS OF BURIED SILICON-NITRIDE LAYERS FORMED BY HIGH-DOSE IMPLANTATION OF N-14 AND N-15, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 15, Pages: 214-217, ISSN: 0168-583X

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• Citations: 22

CHATER RJ, KILNER JA, HEMMENT PLF, REESON KJ, PEART RFet al., 1986, MASS-TRANSPORT STUDIES OF BURIED LAYER FORMATION BY HIGH-DOSE IMPLANTATION INTO SILICON, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 133, Pages: C102-C102, ISSN: 0013-4651

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REESON KJ, HEMMENT PLF, PEART RF, MEEKINSON CD, BOOKER GR, KILNER JA, CHATER RJ, DAVIS Jet al., 1986, FABRICATION OF MULTILAYER SI-DIELECTRIC STRUCTURES USING ION-BEAM SYNTHESIS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 133, Pages: C95-C95, ISSN: 0013-4651

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KILNER JA, CHATER RJ, 1986, A SIMS STUDY OF GROWING OXIDE-FILMS ON SILICON, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 133, Pages: C108-C108, ISSN: 0013-4651

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REESON KJ, HEMMENT PLF, KILNER JA, CHATER RJ, MEEKISON CD, MARSH C, BOOKER GR, DAVIS JRet al., 1986, FORMATION MECHANISM AND STRUCTURES OF BURIED OXY-NITRIDE LAYERS PRODUCED BY ION-BEAM SYNTHESIS, VACUUM, Vol: 36, Pages: 891-895, ISSN: 0042-207X

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• Citations: 12

HEMMENT PLF, REESON KJ, KILNER JA, CHATER RJ, MARSH C, BOOKER GR, CELLER GK, STOEMENOS Jet al., 1986, ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON, VACUUM, Vol: 36, Pages: 877-881, ISSN: 0042-207X

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• Citations: 51

MEEKISON CD, BOOKER GR, REESON KJ, HEMMENT PLF, CHATER RJ, KILNER JA, DAVIS JRet al., 1986, MICROSTRUCTURE OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY HIGH-DOSE NITROGEN IMPLANTATION OF SILICON, VACUUM, Vol: 36, Pages: 925-928, ISSN: 0042-207X

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• Citations: 8

REESON KJ, HEMMENT PLF, PEART RF, MEEKISON CD, MARSH C, BOOKER GR, CHATER RJ, KILNER JA, DAVIS Jet al., 1986, FORMATION MECHANISMS AND STRUCTURES OF INSULATING COMPOUNDS FORMED IN SILICON BY ION-BEAM SYNTHESIS, RADIATION EFFECTS AND DEFECTS IN SOLIDS, Vol: 99, Pages: 71-81, ISSN: 1042-0150

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• Citations: 7

Meekison CD, Booker GR, Reeson K, Hemment PLF, Chater RJ, Kilner JA, Arrowsmith RPet al., 1985, TEM, RBS AND SIMS INVESTIGATIONS OF BURIED NITRIDE LAYER STRUCTURES IN SILICON FORMED BY HIGH-DOSE N** plus ION IMPLANTATION., Pages: 489-494, ISSN: 0373-0751

Buried nitride layers have been formed by high-dose implantation of nitrogen ions into silicon. Observations by cross-sectional TEM, RBS and SIMS before and after high temperature annealing are reported. A good quality upper silicon layer was present after annealing. Plan-view TEM of the annealed specimens showed that the nitride was mainly crystalline, with a spherulitic structure. A double buried nitride layer was produced by implantation at two energies.

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• Citations: 8

HEMMENT PLF, PEART RF, YAO MF, STEPHENS KG, ARROWSMITH RP, CHATER RJ, KILNER JAet al., 1985, SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 6, Pages: 292-297, ISSN: 0168-583X

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• Citations: 24

HEMMENT PLF, PEART RF, YAO MF, STEPHENS KG, CHATER RJ, KILNER JA, MEEKISON D, BOOKER GR, ARROWSMITH RPet al., 1985, HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN, APPLIED PHYSICS LETTERS, Vol: 46, Pages: 952-954, ISSN: 0003-6951

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• Citations: 49

KILNER JA, CHATER RJ, HEMMENT PLF, PEART RF, MAYDELLONDRUSZ EA, TAYLOR MR, ARROWSMITH RPet al., 1985, SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 7-8, Pages: 293-298, ISSN: 0168-583X

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• Citations: 45