Imperial College London
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Dr Robert Hoye, FIMMM CEng CSci

Faculty of Engineering, Department of Materials

Honorary Senior Lecturer
 
 
 
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Contact

 

+44 (0)20 7594 6048r.hoye Website

 
 
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Location

 

2.27Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Musselman:2014:10.1002/adfm.201303994,
author = {Musselman, KP and AlbertSeifried, S and Hoye, RLZ and Sadhanala, A and MuñozRojas, D and MacManusDriscoll, JL and Friend, RH},
doi = {10.1002/adfm.201303994},
journal = {Advanced Functional Materials},
pages = {3562--3570},
title = {Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO},
url = {http://dx.doi.org/10.1002/adfm.201303994},
volume = {24},
year = {2014}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - <jats:p>Exciton dissociation at the zinc oxide/poly(3hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> to 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced lightinduced detrapping of electrons from the surface of the nitrogendoped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.</jats:p>
AU  - Musselman,KP
AU  - AlbertSeifried,S
AU  - Hoye,RLZ
AU  - Sadhanala,A
AU  - MuñozRojas,D
AU  - MacManusDriscoll,JL
AU  - Friend,RH
DO  - 10.1002/adfm.201303994
EP  - 3570
PY  - 2014///
SN  - 1616-301X
SP  - 3562
TI  - Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO
T2  - Advanced Functional Materials
UR  - http://dx.doi.org/10.1002/adfm.201303994
VL  - 24
ER  -
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