Imperial College London
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Dr Robert Hoye, FIMMM CEng CSci

Faculty of Engineering, Department of Materials

Honorary Senior Lecturer
 
 
 
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Contact

 

+44 (0)20 7594 6048r.hoye Website

 
 
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Location

 

2.27Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@misc{Brandt:2016,
author = {Brandt, R and Kurchin, R and Buonassisi, T and Stevanovic, V and Ginley, D and Hoye, R},
title = {OPTOELECTRONIC DEVICES FABRICATED WITH DEFECT TOLERANT SEMICONDUCTORS},
type = {Patent},
url = {https://patents.google.com/patent/WO2016161392},
year = {2016}
}
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RIS format (EndNote, RefMan)

TY  - PAT
AB  - Conventional screening methods for use of semiconductor materials in optoelectronic devices typically emphasize optical properties and scalability concerns. Optical bandgap energy, absorption coefficient, elemental abundance, toxicity, stability, and manufacturing cost of a material represent key criteria for candidate semiconductor materials. However, many materials meet these criteria but fail to achieve industrially relevant conversion efficiencies (above 10-15%) required for high-performance PV materials.Consideration of additional properties that enable bulk transport in the presence of defects can help identify high-performance semiconductor materials with enhanced stability and reduced toxicity. The new design criteria incorporates defect-tolerance in the minority carrier lifetimes of semiconductors and presents a new screening path for candidate materials applicable to optoelectronic devices.
AU  - Brandt,R
AU  - Kurchin,R
AU  - Buonassisi,T
AU  - Stevanovic,V
AU  - Ginley,D
AU  - Hoye,R
PY  - 2016///
TI  - OPTOELECTRONIC DEVICES FABRICATED WITH DEFECT TOLERANT SEMICONDUCTORS
UR  - https://patents.google.com/patent/WO2016161392
ER  -
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