Publications

BibTex format

@article{Nasane:2021:10.1039/d1nj00902h,
author = {Nasane, MP and Rondiya, SR and Jadhav, CD and Rahane, GR and Cross, RW and Jathar, S and Jadhav, Y and Barma, S and Nilegave, D and Jadkar, V and Rokade, A and Funde, A and Chavan, PG and Hoye, RLZ and Dzade, NY and Jadkar, S},
doi = {10.1039/d1nj00902h},
journal = {New Journal of Chemistry: a journal for new directions in chemistry},
pages = {11768--11779},
title = {An interlinked computational-experimental investigation into SnS nanoflakes for field emission applications},
url = {http://dx.doi.org/10.1039/d1nj00902h},
volume = {45},
year = {2021}
}

Download

RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Layered binary semiconductor materials have attracted significant interest as field emitters due to their low work function, mechanical stability, and high thermal, and electrical conductivity. Herein, we report a systematic experimental and theoretical investigation of SnS nanoflakes synthesized using a simple, low-cost, and non-toxic hot injection method for field emission studies. The field emission studies were carried out on SnS nanoflake thin films prepared using a simple spin coating technique. The X-ray diffraction (XRD) and Raman spectroscopy analysis revealed an orthorhombic phase of SnS. Scanning electron microscopy (SEM) analysis revealed that as-synthesized SnS has a flakes like morphology. The formation of pure-phase SnS nanoflakes was further confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The UV-Visible-NIR spectroscopy analysis shows that SnS nanoflakes have a sharp absorption edge observed in the UV region and have a band gap of ∼1.66 eV. In addition, the first-principles density functional theory (DFT) calculations were carried out to provide atomic-level insights into the crystal structure, band structure, and density of states (DOS) of SnS nanoflakes. The field emission properties of SnS nanoflakes were also investigated and it was found that SnS nanoflakes have a low turn-on field (∼6.2 V μm−1 for 10 μA cm−2), high emission current density (∼104 μA cm−2 at 8.0 V μm−1), superior current stability (∼1 μA for ∼2.5 hrs), and a high field enhancement factor of 1735. First principles calculations predicted lower work function for different surfaces, especially for the most stable SnS (001) surface ( = 4.32 eV), which is believed to be responsible for the observed facile electron emission characteristics. We anticipate that the SnS could be utilized for future vacuum nano/microelectronic and flat panel display applications due to the low turn-on field and flakes like structure.
AU  - Nasane,MP
AU  - Rondiya,SR
AU  - Jadhav,CD
AU  - Rahane,GR
AU  - Cross,RW
AU  - Jathar,S
AU  - Jadhav,Y
AU  - Barma,S
AU  - Nilegave,D
AU  - Jadkar,V
AU  - Rokade,A
AU  - Funde,A
AU  - Chavan,PG
AU  - Hoye,RLZ
AU  - Dzade,NY
AU  - Jadkar,S
DO  - 10.1039/d1nj00902h
EP  - 11779
PY  - 2021///
SN  - 1144-0546
SP  - 11768
TI  - An interlinked computational-experimental investigation into SnS nanoflakes for field emission applications
T2  - New Journal of Chemistry: a journal for new directions in chemistry
UR  - http://dx.doi.org/10.1039/d1nj00902h
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000662276500001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://pubs.rsc.org/en/content/articlelanding/2021/NJ/D1NJ00902H#!divAbstract
VL  - 45
ER  -

Download

Dr Robert Hoye, FIMMM CEng CSci

Contact

Location

Summary

Citation

BibTex format

RIS format (EndNote, RefMan)