Summary
Ray Murray leads a small research team investigating the fundamental properties and practical applications of Quantum Nanostructures. The Atomic Force Microscopy image shows tiny islands of InAs grown on GaAs by molecular beam epitaxy. When overgrown with GaAs the InAs inclusions form quantum dots or "artificial atoms". A practical use is in the fabrication of extremely low threshold lasers which can emit two lasing lines simultaneously. Coupling a single dot to an optical cavity yields single photon emitters used in quantum cryptography. When the cavity and dot are strongly coupled two entangled photons can be emitted and it is hoped that this will lead to practical quantum information applications.
InAs islands, 5nm high and 40 nm diameter
Publications
Journals
Konishi T, Clarke E, Burrows CW, et al., 2017, Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate, Scientific Reports, Vol:7, ISSN:2045-2322
Taylor MW, Spencer P, Murray R, 2015, Negative circular polarization as a universal property of quantum dots, Applied Physics Letters, Vol:106, ISSN:0003-6951
Conference
Brossard FSF, Reid BPL, Nuttall L, et al., 2016, Barrier engineering of a photonic molecule in a photonic crystal waveguide, Conference on Lasers and Electro-Optics (CLEO), IEEE, ISSN:2160-9020
Brossard FSF, Reid BPL, Nuttall L, et al., 2016, Barrier engineering of a photonic molecule in a photonic crystal waveguide
Pieczarka M, Marynski A, Podemski P, et al., 2016, Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure, 44th Jaszowiec International School and Conference on the Physics of Semiconductors (IS and CPS), Polish Academy of Sciences, Pages:A59-A61, ISSN:0587-4246