Imperial College London
Alternate

Emeritus ProfessorRaymondMurray

Faculty of Natural Sciences, Department of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 7578r.murray

 
 
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Location

 

913Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

172 results found

Murray R, Childs D, Malik S, Siverns P, Roberts C, Hartmann JM, Stavrinou Pet al., 1999, 1.3 μm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol: 38, Pages: 528-530, ISSN: 0021-4922

We have investigated the growth conditions necessary to achieve strong room temperature emission at 1.3 μm for InAs/GaAs self-assembled quantum dots (QDs) using conventional solid source molecular beam epitaxy (MBE). A relatively high substrate temperature and very low growth rate (LGR) result in long wavelength emission with a small linewidth of only 24 meV. Atomic Force Micrographs obtained from uncapped samples reveal several differences between the LGRQDs and those grown at higher growth rates. The former are larger, more uniform in size and their density is lower by a factor of about 4. LGRQDs have been incorporated in p-i-n structures and strong room temperature electroluminescence detected. The light output of the QD p-i-n diodes is found to he signiticantly higher than a quantum well (QW) sample at least for current densities up to 0.5 kAcm-2.

Journal article

Murray R, Stavrinou PN, 1999, 1.3 micron room temperature electroluminscence from InAs/GaAs self- assembled quantum dots, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol: 38

Journal article

Hassen F, Sghaier H, Maaref H, Murray Ret al., 1998, Optical pumping in strained In<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As/GaAs quantum wells, Symposium on Thin Films Epitaxial Growth and Nanostructures, at the E-MRS Spring Meeting 1998, Publisher: ELSEVIER SCIENCE SA, Pages: 370-372, ISSN: 0040-6090

Conference paper

Rowland GL, Hosea TJC, Malik S, Childs D, Murray Ret al., 1998, A photomodulated reflectance study of InAs/GaAs self-assembled quantum dots, APPLIED PHYSICS LETTERS, Vol: 73, Pages: 3268-3270, ISSN: 0003-6951

Journal article

Ghouma M, Hassen F, Sghaier H, Maaref H, Murray Ret al., 1998, Optical study of the indium accumulation in strained quantum wells, 2nd International Conference on Low Dimensional Structures and Devices, Publisher: ELSEVIER SCIENCE BV, Pages: 197-204, ISSN: 0167-9317

Conference paper

Murray R, Joyce BA, 1998, Scanning transmission electron microscopy of self assembled quantum dots, Physical Review B, Vol: INFO NEEDED

Journal article

Malik S, Roberts C, Murray R, Pate Met al., 1997, Tuning self-assembled InAs quantum dots by rapid thermal annealing, APPLIED PHYSICS LETTERS, Vol: 71, Pages: 1987-1989, ISSN: 0003-6951

Journal article

Yu HP, Lycett S, Roberts C, Murray Ret al., 1996, Time resolved study of self-assembled InAs quantum dots, APPLIED PHYSICS LETTERS, Vol: 69, Pages: 4087-4089, ISSN: 0003-6951

Journal article

Murray R, Bryan C, Yu H, Lycett Set al., 1996, Influence of segregation in quantum well structures, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol: 7, Pages: 341-345, ISSN: 0957-4522

Journal article

Yu HP, Murray R, 1995, The influence of exciton migration on photoluminescence lifetime in growth-interrupted GaAs/AlAs single quantum wells, 1st International Conference on Low Dimensional Structures and Devices, Publisher: ELSEVIER SCIENCE SA, Pages: 125-128, ISSN: 0921-5107

Conference paper

Dewdney AJ, Murray R, Yu H, Roberts Cet al., 1995, Blue shifts from doubly delta-doped heterostructures, 1st International Conference on Low Dimensional Structures and Devices, Publisher: ELSEVIER SCIENCE SA LAUSANNE, Pages: 345-348, ISSN: 0921-5107

Conference paper

Yu HP, Roberts C, Murray R, 1995, The effects of In segregation on the emission properties of InxGa1-xAs/GaAs quantum wells, 1st International Conference on Low Dimensional Structures and Devices, Publisher: ELSEVIER SCIENCE SA LAUSANNE, Pages: 129-132, ISSN: 0921-5107

Conference paper

Murray R, Yu H, 1995, Influence of indium segregation on exciton recombination dynamics in InGaAs/GaAs quantum wells., IV International Conference on Optics of Excitons in Confined Systems, Publisher: EDITRICE COMPOSITORI BOLOGNA, Pages: 1625-1628, ISSN: 0392-6737

Conference paper

Yu H, Murray R, 1995, Exciton migration and recombination enhancement in GaAs/AlAs single quantum wells under resonant excitation., IV International Conference on Optics of Excitons in Confined Systems, Publisher: EDITRICE COMPOSITORI BOLOGNA, Pages: 1791-1795, ISSN: 0392-6737

Conference paper

YU HP, ROBERTS C, MURRAY R, 1995, EXCITON RECOMBINATION DYNAMICS IN INXGA1-XAS/GAAS QUANTUM-WELLS, PHYSICAL REVIEW B, Vol: 52, Pages: 1493-1496, ISSN: 0163-1829

Journal article

YU HP, ROBERTS C, MURRAY R, 1995, INFLUENCE OF INDIUM SEGREGATION ON THE EMISSION FROM INGAAS/GAAS QUANTUM-WELLS, APPLIED PHYSICS LETTERS, Vol: 66, Pages: 2253-2255, ISSN: 0003-6951

Journal article

LYCETT SJ, DEWDNEY AJ, GHISONI M, NORMAN CE, MURRAY R, SANSOM D, ROBERTS JSet al., 1995, UNIFORM INTERMIXING OF QUANTUM-WELLS IN P-I-N MODULATOR STRUCTURES BY IMPURITY FREE VACANCY DIFFUSION, JOURNAL OF ELECTRONIC MATERIALS, Vol: 24, Pages: 197-202, ISSN: 0361-5235

Journal article

YU HP, MOOKHERJEE PB, MURRAY R, YOSHINAGA ASet al., 1995, PHOTOLUMINESCENCE SPECTROSCOPY OF GROWTH-INTERRUPTED GAAS/ALAS SINGLE QUANTUM-WELLS SUBJECTED TO HYDROGENATION, JOURNAL OF APPLIED PHYSICS, Vol: 77, Pages: 1217-1224, ISSN: 0021-8979

Journal article

Haiping Yu, Roberts C, Murray R, 1995, The effects of In segregation on the emission properties of In"SUB chi" Ga"SUB 1" -chiAs/GaAs quantum wells, Materials Science &amp; Engineering B, Pages: 129-132

In segregation modifies the quantum well (QW) potential and the emission energies in In"SUB chi" Ga"SUB 1" -"SUB chi" As/GaAs QW. A second effect relates to the production of In-rich islands at the upper interface which trap free excitons. The low temperature exciton recombination kinetics are compared with the GaAs/Al"SUB 8c" Ga"SUB 1-chi" As system. Interface localization is absent in the In"SUB chi" Ga"SUB 1-chi" As/GaAs QW, confirming that segregation smooths out interface roughness. The variation in photoluminescence decay times with temperature appears to be independent in In fraction but the absolute values increase owing to a reduction in the exciton coherence area. (Authors)

Journal article

DEWDNEY AJ, YU H, ROBERTS C, MURRAY Ret al., 1995, OPTICAL-RESPONSE OF A DELTA-LAYER CAPACITOR, SUPERLATTICES AND MICROSTRUCTURES, Vol: 17, Pages: 225-229, ISSN: 0749-6036

Journal article

GHISONI M, PARRY G, LYCETT S, DEWDNEY A, HART L, MURRAY R, BUTTON C, ROBERTS JSet al., 1994, OBSERVATION OF BLUE-SHIFT IN GAAS/INGAP QUANTUM-WELL P-I-N-DIODES, 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94), Publisher: ELSEVIER SCIENCE SA LAUSANNE, Pages: 323-326, ISSN: 0921-5107

Conference paper

Newman RC, Davidson BR, Addinall R, Murray R, Emmert JW, Wagner J, Gotz W, Roos G, Pensl Get al., 1994, The assignment of the 78/203mev double acceptor in gaas to bas impurity antisite centers, Proceedings of the 17Th International Conference on Defects in Semiconductors, Pts 1-3 - Icds-17, Vol: 143-, Pages: 229-233, ISSN: 0255-5476

Journal article

Newman RC, Davidson BR, Addinall R, Murray R, Emmert JW, Wagner J, Gotz W, Roos G, Pensl Get al., 1994, The assignment of the 78/203mev double acceptor in gaas to bas impurity antisite centers, Proceedings of the 17Th International Conference on Defects in Semiconductors, Pts 1-3 - Icds-17, Vol: 143-, Pages: 229-233, ISSN: 0255-5476

Journal article

GHISONI M, MURRAY R, RIVERS AW, PATE M, HILL G, WOODBRIDGE K, PARRY Get al., 1993, AN OPTICAL STUDY OF ENCAPSULANT THICKNESS-CONTROLLED INTERDIFFUSION OF ASYMMETRIC GAAS QUANTUM-WELL MATERIAL, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 8, Pages: 1791-1796, ISSN: 0268-1242

Journal article

MURRAY R, ROBERTS C, WOODBRIDGE K, BARNES P, PARRY G, NORMAN Cet al., 1993, OPTICAL-EMISSION FROM GAAS ALGAAS P-I-N MULTIQUANTUM-WELL STRUCTURES GROWN ON PATTERNED SI SUBSTRATES, APPLIED PHYSICS LETTERS, Vol: 62, Pages: 2929-2931, ISSN: 0003-6951

Journal article

YOSHINAGA A, MOOKHERJEE P, MURRAY R, NEAVE JH, JOYCE BAet al., 1993, SURFACE RELAXATION KINETICS AND GROWTH INTERRUPTION EFFECTS IN GAAS/ALAS SINGLE QUANTUM-WELLS, 7TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY ( MBE-7 ), Publisher: ELSEVIER SCIENCE BV, Pages: 788-792, ISSN: 0022-0248

Conference paper

WOODBRIDGE K, BARNES P, MURRAY R, ROBERTS C, PARRY Get al., 1993, GAAS/ALGAAS PIN MQW STRUCTURES GROWN ON PATTERNED SI-SUBSTRATES, 7TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY ( MBE-7 ), Publisher: ELSEVIER SCIENCE BV, Pages: 112-115, ISSN: 0022-0248

Conference paper

GREEN M, GARCIAPARAJO M, KHALEQUE F, MURRAY Ret al., 1993, QUANTUM PILLAR STRUCTURES ON N+ GALLIUM-ARSENIDE FABRICATED USING NATURAL LITHOGRAPHY, APPLIED PHYSICS LETTERS, Vol: 62, Pages: 264-266, ISSN: 0003-6951

Journal article

Murray R, Mookherjee PB, Yoshinaga A, Dawson Pet al., 1993, Enhanced luminescence efficiency in growth interrupted single quantum wells by atomic hydrogen, Journal De Physique. IV : JP, Vol: 3, Pages: 441-444, ISSN: 1155-4339

Several groups have demonstrated smoothing of (Al,Ga)As/GaAs quantum well heterointerfaces by growth interrupts (GI). Such quantum wells (QW) usually exhibit multiple narrow line emission spectra where the energy and separation of the peaks is consistent with large lateral islands varying in height by a monolayer. Unfortunately, the integrated emission can be reduced by an order of magnitude as a result of GI. Time decay measurements suggest that GI leads to the incorporation of non-radiative centres. The lifetime and luminescence efficiency can be recovered by annealing the samples for 2h in a hydrogen plasma. The H passivates non-radiative centres but does not degrade the smoothness of the interfaces. These results may have important consequences for the optical and electrical properties of quantum devices.

Journal article

HARRIS JJ, MURRAY R, FOXON CT, 1993, OPTICAL AND ELECTRICAL INVESTIGATION OF SUBBAND POPULATIONS, MOBILITIES AND FERMI LEVEL PINNING IN DELTA-DOPED QUANTUM-WELLS, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 8, Pages: 31-38, ISSN: 0268-1242

Journal article

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