Emeritus ProfessorRaymondMurray

DEWDNEY AJ, HOLMES S, YU H, FAHY M, MURRAY Ret al., 1993, SUBBAND STRUCTURE OF MULTIPLE SI DELTA-DOPED PLANES IN GAAS, SUPERLATTICES AND MICROSTRUCTURES, Vol: 14, Pages: 205-210, ISSN: 0749-6036

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• Citations: 9

Dosanjh SS, Dawson P, Fahy MR, Joyce BA, Stradling RA, Murray Ret al., 1993, Optical studies of the growth of single monolayer wide inas quantum-wells on gaas by mbe, Journal of Crystal Growth, Vol: 127, Pages: 579-583, ISSN: 0022-0248

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Fahy MR, Neave JH, Ashwin MJ, Murray R, Newman RC, Joyce BA, Kadoya Y, Sakaki Het al., 1993, Incorporation of silicon during mbe growth of gaas on (111)A substrates, Journal of Crystal Growth, Vol: 127, Pages: 871-876, ISSN: 0022-0248

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MURRAY R, GRAFF K, PAJOT B, STRIJCKMANS K, VANDENDRIESSCHE S, GRIEPINK B, MARCHANDISE Het al., 1992, INTERLABORATORY DETERMINATION OF OXYGEN IN SILICON FOR CERTIFIED REFERENCE MATERIALS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 139, Pages: 3582-3587, ISSN: 0013-4651

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• Citations: 12

DOSANJH SS, DAWSON P, FAHY MR, JOYCE BA, MURRAY R, TOYOSHIMA H, ZHANG XM, STRADLING RAet al., 1992, REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND OPTICAL MEASUREMENTS ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ONE AND 2 MONOLAYERS OF INAS ON GAAS, JOURNAL OF APPLIED PHYSICS, Vol: 71, Pages: 1242-1247, ISSN: 0021-8979

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• Citations: 37

Barnham KWJ, Nelson J, Paxman M, Murray R, Foxon CTet al., 1992, A new application for iii-v quantum-well systems - efficiency enhancement in solar-cells, Gallium Arsenide and Related Compounds 1991, Vol: 120, Pages: 511-515

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Barnham KWJ, Nelson J, Paxman M, Murray R, Foxon CTet al., 1992, A new application for iii-v quantum-well systems - efficiency enhancement in solar-cells, Gallium Arsenide and Related Compounds 1991, Vol: 120, Pages: 511-515

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Addinall R, Murray R, Newman RC, Wagner J, Parker SD, Williams RL, Droopad R, DeOliveira AG, Ferguson I, Stradling RAet al., 1991, Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering, Semiconductor Science and Technology, Vol: 6, Pages: 147-154, ISSN: 0268-1242

Samples of InAs and InSb either singly or doubly doped with Si and Be impurities have been studied using FTIR absorption spectroscopy and Raman scattering. Localized vibrational modes of 28SiIn donors and 9BeIn acceptors have been identified at 359 and 435 cm-1 respectively in InAs. The two impurities give corresponding lines at 316 and 414 cm-1 in InSb. Comparisons are made with the behaviour of the same impurities in compensated of p-type GaAs. Strong resonance effects relating to the incident photon energy are found in the Raman spectra of 20SiIn donors.

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• Citations: 17

WAGNER J, MAIER M, MURRAY R, NEWMAN RC, BEALL RB, HARRIS JJet al., 1991, QUANTITATIVE ASSESSMENT OF BE ACCEPTORS IN GAAS BY LOCAL VIBRATIONAL-MODE SPECTROSCOPY, JOURNAL OF APPLIED PHYSICS, Vol: 69, Pages: 971-974, ISSN: 0021-8979

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• Citations: 24

Murray R, 1991, Hydrogen enhanced oxygen diffusion, Physica B, Vol: 170, Pages: 115-123, ISSN: 0921-4526

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Newman RC, Brown AR, Murray R, Tipping A, Tucker JHet al., 1990, Enhanced thermal donor formation and oxygen diffusion in silicon exposed to atomic hydrogen, Pages: 734-745, ISSN: 0161-6374

Annealing Czochralski silicon in a hydrogen plasma in the range 300-450°C leads to enhanced rates of (a) oxygen diffusion jumps, (b) the loss of oxygen from solution and (c) the production of thermal donors (TD), compared with samples annealed in air in a furnace. The two latter quantities are correlated in low carbon material. In chemically etched material, TD concentrations up to 1017cm-3 are produced, while in magnetic CZ Si there is enhanced production of carbon-oxygen complexes. Another observation is the formation of shallow thermal donors which have been assigned previously to O-N complexes. The evidence indicates that these effects are due to enhanced oxygen diffusion, catalysed by atomic hydrogen. The observations may lead to a better understanding of the formation of TD-centres and have implications for reactive ion processing.

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• Citations: 18

BEALL RB, CLEGG JB, CASTAGNE J, HARRIS JJ, MURRAY R, NEWMAN RCet al., 1989, POST-GROWTH DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN BY MBE, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 4, Pages: 1171-1175, ISSN: 0268-1242

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• Citations: 40

MURRAY R, NEWMAN RC, SANGSTER MJL, BEALL RB, HARRIS JJ, WRIGHT PJ, WAGNER J, RAMSTEINER Met al., 1989, THE CALIBRATION OF THE STRENGTH OF THE LOCALIZED VIBRATIONAL-MODES OF SILICON IMPURITIES IN EPITAXIAL GAAS REVEALED BY INFRARED-ABSORPTION AND RAMAN-SCATTERING, JOURNAL OF APPLIED PHYSICS, Vol: 66, Pages: 2589-2596, ISSN: 0021-8979

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• Citations: 75

MURRAY R, NEWMAN RC, LEIGH RS, BEALL RB, HARRIS JJ, BROZEL MR, MOHADESKASSAI A, GOULDING Met al., 1989, FANO PROFILES OF ABSORPTION-LINES FROM THE LOCALIZED VIBRATIONAL-MODES OF BE ACCEPTORS IN GAAS AND B-ACCEPTORS IN SILICON, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 4, Pages: 423-426, ISSN: 0268-1242

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• Citations: 15

Collins JD, Gledhill GA, Murray R, Nandhra PS, Newman RCet al., 1989, The Selective Trapping of Arsenic Interstitial Atoms by Impurities in Gallium Arsenide, physica status solidi (b), Vol: 151, Pages: 469-477, ISSN: 0370-1972

Carbon doped GaAs is irradiated either with fast neutrons (1 MeV) or2 electrons (2 MeV). Complexes previously labelled C(1) are produced and the fine structure of the two LVM lines is discussed. A comparison is made with the BGaAsi complex and it is concluded that the C(1) centre is a CAsAsi defect. The defect dissociates at about 150 °C. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

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• Citations: 18

Murray R, Brown AR, Newman RC, 1989, Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasma, Materials Science and Engineering B-Solid State Materials for Advanced Technology, Vol: 4, Pages: 299-302, ISSN: 0921-5107

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Brown AR, Claybourn M, Murray R, Nandhra PS, Newman RC, Tucker JHet al., 1988, Enhanced thermal donor formation in silicon exposed to a hydrogen plasma, Semiconductor Science and Technology, Vol: 3, Pages: 591-593, ISSN: 0268-1242

Czochralski silicon samples have been heated at temperatures between 350-450 degrees C in a hydrogen plasma. Thermal donors are generated at about five times the rate found after furnace annealing, even if the ambient is hydrogen gas. The final donor concentration is comparable for the two types of processing. There is no significant evidence for hydrogen passivation effects and donors are not produced in plasma treated FZ silicon. Heating samples in an argon plasma does not enhance the rate of donor formation. Possible mechanisms for the enhancement are outlined briefly.

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• Citations: 57

NANDHRA PS, NEWMAN RC, MURRAY R, PAJOT B, CHEVALLIER J, BEALL RB, HARRIS JJet al., 1988, THE PASSIVATION OF BE ACCEPTORS IN GAAS BY EXPOSURE TO A HYDROGEN PLASMA, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 3, Pages: 356-360, ISSN: 0268-1242

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• Citations: 54

PAJOT B, NEWMAN RC, MURRAY R, JALIL A, CHEVALLIER J, AZOULAY Ret al., 1988, HIGH-RESOLUTION INFRARED STUDY OF THE NEUTRALIZATION OF SILICON DONORS IN GALLIUM-ARSENIDE, PHYSICAL REVIEW B, Vol: 37, Pages: 4188-4195, ISSN: 0163-1829

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• Citations: 63

Murray R, Newman RC, Woodhead J, 1987, The stability of Frenkel pairs and group V interstitials in electron-irradiated GaAs and GaP, Semiconductor Science and Technology, Vol: 2, Pages: 399-403, ISSN: 0268-1242

BGa impurity atoms selectively trap mobile group V interstitials to form defects designated B(1) centres in both GaAs and GaP during 2 MeV electron irradiation at room temperature. The production of these centres has been measured in both n-type and p-type material by infrared absorption and compared with a model proposed by Pons and Bourgoin relating to radiation-enhanced diffusion of the interstitial atoms. The results imply, however, that the dissociation of Frenkel pairs produced on the group V sublattice as primary defects control the process. The Frenkel pairs are stable in n-type material but not in p-type or high-resistivity material.

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• Citations: 10

MAGUIRE J, MURRAY R, NEWMAN RC, BEALL RB, HARRIS JJet al., 1987, MECHANISM OF COMPENSATION IN HEAVILY SILICON-DOPED GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY, APPLIED PHYSICS LETTERS, Vol: 50, Pages: 516-518, ISSN: 0003-6951

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• Citations: 114

Beall RB, Murray R, Newman RC, Whitehouse JEet al., 1985, On the mechanism of formation on As⁺<inf>ga</inf>, anti-site defects in electron-irradiated n-type gaAs, Journal of Physics C: Solid State Physics, Vol: 18, Pages: L763-L767, ISSN: 0022-3719

Data have been obtained specifically to test a recent suggestion that mobile arsenic interstitials in electron-irradiated GaAs interact with impurities on the gallium sub-lattice via a ’Watkins’ replacement to produce AS+Ga. A comparison was made of the production of arsenic anti-site defects (AS+Ga) in two Bridgman GaAs crystals, one doped with silicon and the other with sulphur. IR (LVM) absorption and EPR measurements show that the chemical nature of the n-type dopant (SiGa or SAS) is unimportant: AIG, defects play no role and boron and carbon impurities are not relevant to the process: Finally, no effects were observed in changing the incident beam current from 24 to 2.4 µA cm-2. We conclude that the impurity replacement mechanism cannot be correct. © 1985, IOP Publishing Ltd.

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• Citations: 12