Imperial College London

ProfessorRupertOulton

Faculty of Natural SciencesDepartment of Physics

Professor of Nanophotonics
 
 
 
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Contact

 

+44 (0)20 7594 7576r.oulton

 
 
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Location

 

914Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Grinblat:2019:10.1126/sciadv.aaw3262,
author = {Grinblat, G and Nielsen, M and Dichtl, P and Li, Y and Oulton, R and Maier, S},
doi = {10.1126/sciadv.aaw3262},
journal = {Science Advances},
title = {Ultrafast sub-30 FS all-optical switching based on gallium phosphide},
url = {http://dx.doi.org/10.1126/sciadv.aaw3262},
volume = {5},
year = {2019}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Gallium Phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible ( >450 )and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub-30 fs (full width at half maximum) transmission modulation of up to 70% in the 600-1000 nm wavelength range. Nonlinear simulations using parameters measured by the Z-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Due to the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.
AU - Grinblat,G
AU - Nielsen,M
AU - Dichtl,P
AU - Li,Y
AU - Oulton,R
AU - Maier,S
DO - 10.1126/sciadv.aaw3262
PY - 2019///
SN - 2375-2548
TI - Ultrafast sub-30 FS all-optical switching based on gallium phosphide
T2 - Science Advances
UR - http://dx.doi.org/10.1126/sciadv.aaw3262
UR - http://hdl.handle.net/10044/1/70720
VL - 5
ER -