Imperial College London
Alternate

ProfessorRupertOulton

Faculty of Natural Sciences, Department of Physics

Professor of Nanophotonics
 
 
 
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Contact

 

+44 (0)20 7594 7576r.oulton

 
 
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Location

 

914Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Sistani:2020:10.1021/acs.jpcc.0c02602,
author = {Sistani, M and Bartmann, MG and Gusken, NA and Oulton, RF and Keshmiri, H and Minh, AL and Robin, E and den, Hertog M and Lugstein, A},
doi = {10.1021/acs.jpcc.0c02602},
journal = {The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter},
pages = {13872--13877},
title = {Stimulated raman scattering in Ge nanowires},
url = {http://dx.doi.org/10.1021/acs.jpcc.0c02602},
volume = {124},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Investigating group-IV-based photonic components is a very active area of research with extensive interest in developing complementary metal-oxide-semiconductor (CMOS) compatible light sources. However, due to the indirect band gap of these materials, effective light-emitting diodes and lasers based on pure Ge or Si cannot be realized. In this context, there is considerable interest in developing group-IV based Raman lasers. Nevertheless, the low quantum yield of stimulated Raman scattering in Si and Ge requires large device footprints and high lasing thresholds. Consequently, the fabrication of integrated, energy-efficient Raman lasers is challenging. Here, we report the systematic investigation of stimulated Raman scattering (SRS) in Ge nanowires (NWs) and axial Al-Ge-Al NW heterostructures with Ge segments that come into contact with self-aligned Al leads with abrupt metal–semiconductor interfaces. Depending on their geometry, these quasi-one-dimensional (1D) heterostructures can reassemble into Ge nanowires, Ge nanodots, or Ge nanodiscs, which are monolithically integrated within monocrystalline Al (c-Al) mirrors that promote both optical confinement and effective heat dissipation. Optical mode resonances in these nanocavities support in SRS thresholds as low as 60 kW/cm2. Most notably, our findings provide a platform for elucidating the high potential of future monolithically integrated, nanoscale low-power group-IV-based Raman lasers.
AU  - Sistani,M
AU  - Bartmann,MG
AU  - Gusken,NA
AU  - Oulton,RF
AU  - Keshmiri,H
AU  - Minh,AL
AU  - Robin,E
AU  - den,Hertog M
AU  - Lugstein,A
DO  - 10.1021/acs.jpcc.0c02602
EP  - 13877
PY  - 2020///
SN  - 1932-7447
SP  - 13872
TI  - Stimulated raman scattering in Ge nanowires
T2  - The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter
UR  - http://dx.doi.org/10.1021/acs.jpcc.0c02602
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000545668100039&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://pubs.acs.org/doi/10.1021/acs.jpcc.0c02602
UR  - http://hdl.handle.net/10044/1/100856
VL  - 124
ER  -
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