Imperial College London
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ProfessorRiccardoSapienza

Faculty of Natural Sciences, Department of Physics

Professor of Physics
 
 
 
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Contact

 

+44 (0)20 7594 9577r.sapienza Website

 
 
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Location

 

B913Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Kalinic:2020:10.1103/PhysRevApplied.14.014086,
author = {Kalinic, B and Cesca, T and Mignuzzi, S and Jacassi, A and Balasa, IG and Maier, SA and Sapienza, R and Mattei, G},
doi = {10.1103/PhysRevApplied.14.014086},
journal = {Physical Review Applied},
pages = {014086  1--014086  11},
title = {All-dielectric silicon nanoslots for Er3+ photoluminescence enhancement},
url = {http://dx.doi.org/10.1103/PhysRevApplied.14.014086},
volume = {14},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We study, both experimentally and theoretically, the modification of Er3+ photoluminescence properties in Si dielectric nanoslots. The ultrathin nanoslot (down to 5-nm thickness), filled with Er in SiO2, boosts the electric and magnetic local density of states via coherent near-field interaction. We report an experimental 20-fold enhancement of the radiative decay rate with negligible losses. Moreover, via modifying the geometry of the all-dielectric nanoslot, the outcoupling of the emitted radiation to the far field can be strongly improved, without affecting the strong decay-rate enhancement given by the nanoslot structure. Indeed, for a periodic square array of slotted nanopillars an almost one-order-of-magnitude-higher Er3+ PL intensity is measured with respect to the unpatterned structures. This has a direct impact on the design of more efficient CMOS-compatible light sources operating at telecom wavelengths.
AU  - Kalinic,B
AU  - Cesca,T
AU  - Mignuzzi,S
AU  - Jacassi,A
AU  - Balasa,IG
AU  - Maier,SA
AU  - Sapienza,R
AU  - Mattei,G
DO  - 10.1103/PhysRevApplied.14.014086
EP  - 1
PY  - 2020///
SN  - 2331-7019
SP  - 014086
TI  - All-dielectric silicon nanoslots for Er3+ photoluminescence enhancement
T2  - Physical Review Applied
UR  - http://dx.doi.org/10.1103/PhysRevApplied.14.014086
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000553352700004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.14.014086
UR  - http://hdl.handle.net/10044/1/81733
VL  - 14
ER  -
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