Imperial College London
Professor Richard Syms

ProfessorRichardSyms

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor
 
 
 
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Contact

 

+44 (0)20 7594 6203r.syms

 
 
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Location

 

702Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Syms:2019:1361-6528/ab13de,
author = {Syms, RRA and Sydoruk, O and Bouchaala, A},
doi = {1361-6528/ab13de},
journal = {Nanotechnology},
title = {Improved optical imaging of high aspect ratio nanostructures using dark-field microscopy},
url = {http://dx.doi.org/10.1088/1361-6528/ab13de},
volume = {30},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Improvements to white light optical imaging of widely spaced, high aspect ratio nanostructures are demonstrated using dark-field field microscopy. 1D models of bright- and dark-field imaging are developed from rigorous modal diffraction theory by assuming that features are periodic. A simple model is developed to explain dark field results and simulated line images obtained using the two modalities are compared for different dimensions and materials. Increased contrast between etched features and the substrate is demonstrated in dark field, due to its reduced sensitivity to scattering from flat areas. The results are verified using silicon nanostructures fabricated by sidewall transfer lithography, and feature separation with improved tolerance to apparent substrate brightness is demonstrated during image segmentation using the Otsu method.
AU  - Syms,RRA
AU  - Sydoruk,O
AU  - Bouchaala,A
DO  - 1361-6528/ab13de
PY  - 2019///
SN  - 0957-4484
TI  - Improved optical imaging of high aspect ratio nanostructures using dark-field microscopy
T2  - Nanotechnology
UR  - http://dx.doi.org/10.1088/1361-6528/ab13de
UR  - https://www.ncbi.nlm.nih.gov/pubmed/30917352
UR  - http://hdl.handle.net/10044/1/69833
VL  - 30
ER  -
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