Imperial College London
Professor Richard Syms

ProfessorRichardSyms

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor
 
 
 
//

Contact

 

+44 (0)20 7594 6203r.syms

 
 
//

Location

 

702Electrical EngineeringSouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Syms:2017:1361-6439/aa7167,
author = {Syms, RRA and Liu, D and Ahmad, MM},
doi = {1361-6439/aa7167},
journal = {Journal of Micromechanics and Microengineering},
title = {Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS},
url = {http://dx.doi.org/10.1088/1361-6439/aa7167},
volume = {27},
year = {2017}
}
Download

RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young's moduli and effective Poisson's ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson's ratio are verified and failure patterns are described.
AU  - Syms,RRA
AU  - Liu,D
AU  - Ahmad,MM
DO  - 1361-6439/aa7167
PY  - 2017///
SN  - 0960-1317
TI  - Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS
T2  - Journal of Micromechanics and Microengineering
UR  - http://dx.doi.org/10.1088/1361-6439/aa7167
UR  - http://hdl.handle.net/10044/1/50996
VL  - 27
ER  -
Download