Imperial College London

DrSalvadorEslava

Faculty of EngineeringDepartment of Chemical Engineering

Reader in Applied Energy Materials
 
 
 
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Contact

 

+44 (0)20 7594 8977s.eslava Website CV

 
 
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Location

 

412ACE ExtensionSouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

105 results found

Eslava S, Baklanov MR, Kirschhock CEA, Iacopi F, Aldea S, Maex K, Martens JAet al., 2007, Characterization of a molecular sieve coating using ellipsometric porosimetry, LANGMUIR, Vol: 23, Pages: 12811-12816, ISSN: 0743-7463

Journal article

Eslava S, Iacopi F, Baklanov MR, Kirschhock CEA, Maex K, Martens JAet al., 2007, Ultraviolet-assisted curing of polycrystalline pure-silica zeolites: Hydrophobization, functionalization, and cross-linking of grains, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 129, Pages: 9288-+, ISSN: 0002-7863

Journal article

Eslava S, Eymery G, Foubert P, Iacopi F, Maex K, Baklanov MRet al., 2007, Optical characteristics of low-k films and barrier layers in the ultraviolet range, 4th International Conference on Spectroscopic Ellipsometry

3. S. Eslava, G. Eymery, P. Foubert, F. Iacopi, K. Maex, M.R. Baklanov; ;

Conference paper

Eslava S, Eymery G, Foubert P, Iacopi F, Maex K, Baklanov MRet al., 2007, Optical absorption and characteristics of low-k films and barrier layers in the UV range, Mater. Res. Soc. Spring 2007

Conference paper

Eslava S, Iacopi F, Baklanov MR, Kirschhock CEA, Maex K, Martens JAet al., 2007, Ultra-violet-assisted cure of spin-on silicalite-1 films, 15th International Zeolite Conference 2007, Pages: 594-599, ISSN: 0167-2991

Conference paper

Eslava S, Iacopi F, Baklanov MR, Kirschhock CEA, Maex K, Martens JAet al., 2007, Ultra-violet-assisted cure of spin-on silicalite-1 films, 15th International Zeolite Conference 2007, Pages: 594-599, ISSN: 0167-2991

Conference paper

Iacopi F, Eslava S, Kirschhock CEA, Martens JAet al., 2007, UV light exposure for functionalization and hydrophobization of pure silica zeolite, USA (US2007/0189961), Europe (EP1816104) and Japan (JP2007210884).

Patent

Shamiryan D, Paraschiv V, Eslava-Fernandez S, Baklanov M, Beckx S, Boullart Wet al., 2007, Profile control of novel non-Si gates using BCl3/N2 plasma, J. Vacuum Sci. Technol. B, Vol: 25

The authors found that a BCl3/N2 plasma is very suitable for metal gate patterning and profile control as it produces a passivating film during the etching. On blanket wafers, a boron-nitride-like film is deposited from a boron trichloride/nitride plasma mixture in a standard etch chamber at temperatures as low as 60 °C. Deposition rate can be varied from 10 to more than 100 nm/min depending on the plasma conditions and BCl3/N2 ratio. The film contains hexagonal boron nitride but is very unlikely to be a stoichiometric BN. It decomposes at elevated temperatures and is water soluble. The latter property makes the postetch clean relatively straightforward. This film can be used for sidewall passivation during the patterning of advanced non-Si gates, e.g., metal gates. They are presenting the use of BCl3/N2 plasma for patterning of Ge and TaN gates as examples. The Ge gate profile is damaged by a pure BCl3 plasma during high-k dielectric (HfO2) etching after the gate patterning. Addition of 10% N2 to the BCl3 plasma preserves the gate profile while removing the high k. In the other example, a TaN gate is etched isotopically by pure BCl3 plasma. Addition of 5% N2 prevents the lateral attack providing straight TaN profile.

Journal article

Eslava S, Baklanov MR, Iacopi F, Aldea S, Kirschhock CEA, Martens JA, Maex Ket al., 2006, Porosity study on MFI zeolite films, TRI/Princeton Workshop on Characterization of Porous Materials 2006

Conference paper

Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Boullart Wet al., 2006, BCl3/N-2 plasma for advanced non-Si gate patterning, Mater. Res. Soc. Spring 2006, Pages: 105-110, ISSN: 0272-9172

Conference paper

Eslava-Fernandez S, Baklanov MR, Iacopi F, Brongersma SH, Kirschhock CEA, Maex Ket al., 2006, Zeolite low-k film properties dependence on nanocrystal size, Mater. Res. Soc. Spring 2006, Pages: 421-426, ISSN: 0272-9172

Conference paper

Eslava S, Baklanov MR, Iacopi F, Brongersma S, Kirschhock C, Maex Ket al., 2006, Zeolite low-k film properties dependence on crystal size, Mater. Res. Soc. Spring 2006

Mater. Res. Soc. Spring 2006, San Francisco, US. Proceedings published in Mater. Res. Soc. Symp. Proc. 2006, 914, F03.

Conference paper

Shamiryan D, Paraschiv V, Eslava S, Demand M, Baklanov M, Boullart Wet al., 2006, BCl3/N2 plasma for advanced non-Si gate patterning, Mater. Res. Soc. Spring 2006

Conference paper

Iacopi F, Beyer G, Houthoofd P, Adriaensens C, Waldfried S, Demuynck S, Travaly Y, Eslava S, Gage D, Giangrandi S, Rennau M, Schulze K, Schulz S, Carlotti G, Dauskardt Ret al., 2006, Matrix structure of organo-silicate glasses and thermo-mechanical properties of thin low-k films, Mater. Res. Soc. Spring 2006

5. F. Iacopi, G. Beyer, K. Houthoofd, P. Adriaensens, C. Waldfried, S. Demuynck, Y. Travaly, S. Eslava Fernandez, D. Gage, S. Giangrandi, M. Rennau, K. Schulze, S. Schulz, G. Carlotti, R. Dauskardt; ;, Mater. Res. Soc. Spring 2006, San Francisco,US.

Conference paper

Armini S, Whelan CM, Smet M, Eslava S, Maex Ket al., 2006, Size shrinkage of methacrylate-based terpolymer latexes synthesized by free radical polymerization: Kinetics and influence of main reaction parameters, POLYMER JOURNAL, Vol: 38, Pages: 786-798, ISSN: 0032-3896

Journal article

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