Publications
264 results found
Aivali S, Yuan P, Panidi J, et al., 2022, Electron Transporting Perylene Diimide-Based Random Terpolymers with Variable Co-Monomer Feed Ratio: A Route to All-Polymer Based Photodiodes, MACROMOLECULES, Vol: 55, Pages: 672-683, ISSN: 0024-9297
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- Citations: 3
Wang J, Serb A, Wang S, et al., 2022, Offset Rejection in a DC-Coupled Hybrid CMOS/Memristor Neural Front-End, Pages: 970-974, ISSN: 0271-4310
One of the challenges of designing neural front-end is to reject the DC offset from electrodes. The conventional AC-coupled solution is to utilise large input capacitors and pseudo-resistors, which have the key limitations of area, linearity and DC drift. In this paper, we propose a DC-coupled solution based on the hybrid CMOS/memristor technique. The spike detection is realised by thresholding in the proposed front-end, which consists of a memristive amplifier and a DLC. The amplifier boosts micro-volt neural signals to milli-volt through integration, making it recognised by the DLC. In addition, the memristor is utilised as a trimming device along the current branch for the purpose of tuning the offset voltage. It is capable of compensating up to 50mV DC offset. With the oversampling ratio reaching 95, the accuracy spike detection can be maintained to 95% and the frontend consumes 123.5nW in our design example. The proposed DC offset front-end is capable of reaching high accuracy and low power consumption.
Wang J, Serb A, Wang S, et al., 2022, Hybrid CMOS/Memristor Front-End for Multiunit Activity Processing, Pages: 965-969, ISSN: 0271-4310
Epileptic seizure prediction could help patients stay safe and provide them with opportunities to prevent seizures in advance. This can be realised by a complete system that captures the intracortical neuronal signals from the implantable device, processes the recorded data for discriminating seizures and transfers the information to the personal advisory device. Seizures can be discriminated by monitoring the counts of population spikes and we proposed a spike detection front-end for this application. The proposed discrete-time system amplifies, detects and digitises the spiking with ultra-low power and high precision with the aid of memristor as a trimming device. In this paper, we utilised the measurement methodology for the discrete-time system that combines periodic steady-state analysis and transient simulation to examine its behaviour under sources of uncertainty: noise, process corner and mismatch. The noise performance can be improved by oversampling while maintaining low power consumption. And the memristive devices are capable of compensating the inherent offset and do not induce material impact. Combining work and verification above, the system can be scaled up and/or practical implementation in the next step.
Simanjuntak FM, Talbi F, Kerrigan A, et al., 2022, Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications, Pages: 171-175
We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.
Wang D, Wang S, Prodromakis T, et al., 2022, Delta-Sigma Modulator Design Using a Memristive FIR DAC, 29th IEEE International Conference on Electronics, Circuits and Systems (IEEE ICECS), Publisher: IEEE
Agwa S, Pan Y, Abbey T, et al., 2022, High-Density Digital RRAM-based Memory with Bit-line Compute Capability, IEEE International Symposium on Circuits and Systems (ISCAS), Publisher: IEEE, Pages: 1199-1200, ISSN: 0271-4302
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- Citations: 2
Si Z, Wang C, Malik A, et al., 2022, Memristor-assisted Background Calibration for Analog-to-Digital Converter, 20th IEEE Interregional NEWCAS Conference (IEEE NEWCAS), Publisher: IEEE, Pages: 470-474
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- Citations: 1
Huang J, Stathopoulos S, Serb A, et al., 2022, A tool for emulating neuromorphic architectures with memristive models and devices, IEEE International Symposium on Circuits and Systems (ISCAS), Publisher: IEEE, Pages: 1092-1096, ISSN: 0271-4302
Simanjuntak FM, Hsu C-L, Abbey T, et al., 2021, Conduction channel configuration controlled digital and analog response in TiO<sub>2</sub>-based inorganic memristive artificial synapses, APL MATERIALS, Vol: 9, ISSN: 2166-532X
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- Citations: 4
Lanza M, Waser R, Ielmini D, et al., 2021, Standards for the Characterization of Endurance in Resistive Switching Devices, ACS NANO, Vol: 15, Pages: 17214-17231, ISSN: 1936-0851
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- Citations: 89
Maheshwari S, Stathopoulos S, Wang J, et al., 2021, Design flow for hybrid CMOS/memristor systems--Part I: modeling and verification steps, IEEE Transactions on Circuits and Systems I: Regular Papers, Vol: 68, Pages: 4862-4875, ISSN: 1549-8328
Memristive technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate the behaviour of our in-house fabricated custom memristor model and its integration into the Cadence Electronic Design Automation (EDA) tools for verification. Various input stimuli were given to record the memristive device characteristics both at the device level as well as the schematic level for verification of the memristor model. This design flow from device to industrial level EDA tools is the first step before the model can be used and integrated with Complementary Metal-Oxide Semiconductor (CMOS) in applications for hybrid memristor/CMOS system design.
Maheshwari S, Stathopoulos S, Wang J, et al., 2021, Design flow for hybrid CMOS/memristor systems--Part II: circuit schematics and layout, IEEE Transactions on Circuits and Systems I: Regular Papers, Vol: 68, Pages: 4876-4888, ISSN: 1549-8328
\normalsize The capability of in-memory computation, reconfigurability, low power operation as well as multistate operation of the memristive device deems them a suitable candidate for designing electronic circuits with a broad range of applications. Besides, the integrability of memristor with CMOS enables it to use in logic circuits too. In this work, we demonstrate with examples the design flow for memristor-based electronics, after the custom memristor model already being integrated and validated into our chosen Computer-Aided Design (CAD) tool to performing layout-versus-schematic and post-layout checks including the memristive device. We envisage that this step-by-step guide to introducing memristor into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with memristive-enhanced systems.
Manouras V, Stathopoulos S, Serb A, et al., 2021, Technology agnostic frequency characterization methodology for memristors, SCIENTIFIC REPORTS, Vol: 11, ISSN: 2045-2322
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- Citations: 5
Vaidya D, Kothari S, Abbey T, et al., 2021, Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO<i><sub>x</sub></i> Memristors-Part II: Physics-Based Model, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 68, Pages: 4885-4890, ISSN: 0018-9383
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- Citations: 1
Vaidya D, Kothari S, Abbey T, et al., 2021, Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO<i><sub>x</sub></i>-Based Memristors - Part I: Behavioral Model, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 68, Pages: 4877-4884, ISSN: 0018-9383
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- Citations: 3
Serb A, Khiat A, Prodromakis T, 2021, Practical demonstration of a RRAM memory fuse, INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Vol: 49, Pages: 2363-2372, ISSN: 0098-9886
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- Citations: 1
Wang J, Serb A, Papavassiliou C, et al., 2021, Analysing and measuring the performance of memristive integrating amplifiers, INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Vol: 49, Pages: 3507-3525, ISSN: 0098-9886
Manouras V, Stathopoulos S, Garlapati SK, et al., 2021, Frequency Response of Metal-Oxide Memristors, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 68, Pages: 3636-3642, ISSN: 0018-9383
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- Citations: 6
Leung OM, Schoetz T, Prodromakis T, et al., 2021, Review-Progress in Electrolytes for Rechargeable Aluminium Batteries, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 168, ISSN: 0013-4651
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- Citations: 22
Maheshwari S, Serb A, Papavassiliou C, et al., 2021, An Adiabatic Regenerative Capacitive Artificial Neuron, 2021 IEEE International Symposium on Circuits and Systems (ISCAS), Publisher: IEEE
Wang J, Serb A, Papavassiliou C, et al., 2021, Accounting for Memristor I-V Non-Linearity in Low Power Memristive Amplifiers, 2021 IEEE International Symposium on Circuits and Systems (ISCAS), Publisher: IEEE
Simanjuntak FM, Chandrasekaran S, Panda D, et al., 2021, Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure, APPLIED PHYSICS LETTERS, Vol: 118, ISSN: 0003-6951
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- Citations: 5
Prinzie J, Simanjuntak FM, Leroux P, et al., 2021, Low-power electronic technologies for harsh radiation environments, NATURE ELECTRONICS, Vol: 4, Pages: 243-253, ISSN: 2520-1131
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- Citations: 28
Stathopoulos S, Tzouvadaki I, Prodromakis T, 2021, UV induced resistive switching in hybrid polymer metal oxide memristors (vol 10, 21130, 2020), SCIENTIFIC REPORTS, Vol: 11, ISSN: 2045-2322
Saleem A, Simanjuntak FM, Chandrasekaran S, et al., 2021, Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications, APPLIED PHYSICS LETTERS, Vol: 118, ISSN: 0003-6951
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- Citations: 28
Shen J, Stathopoulos S, Prodromakis T, et al., 2021, A reconfigurable CMOS-memristor active inductor, ISCAS 2020, ISSN: 0271-4310
A methodology is introduced here to exploit the programmability of the memristors in order to realize reconfigurable monolithic analogue circuit elements. Classical network synthesis methods are used to synthesize adjustable active inductors with inductance values exceeding those of on-chip passives by several orders of magnitude. In this paper, a wide range of active inductance values are obtained by employing memristor to control the biasing current of operational transconductance amplifiers used to implement gyrators. The gyration constant of the proposed gyrator will be linearly controlled by memristance state. The implementation of the designed circuit is realized in 0.18µm commercially available complementary metal-oxide-semiconductor (CMOS) technology from TSMC. Circuit performance is simulated using Cadence Virtuoso. The utilized off-chip memristor is a metal-oxide bi-layer memristor which exhibits a non-volatile memristance range of 4.7kΩ to 170kΩ. The active inductance range achieved is from approximately 95µH to 1.55mH with an inductive bandwidth of 69MHz and 18MHz respectively. The total power consumption is between 0.21mW to 1.95mW depending on the memristance and equivalent inductance.
Pan Y, Foster P, Serb A, et al., 2021, A RRAM-based Associative Memory Cell, IEEE International Symposium on Circuits and Systems (IEEE ISCAS), Publisher: IEEE, ISSN: 0271-4302
Stathopoulos S, Tzouvadaki I, Prodromakis T, 2020, UV induced resistive switching in hybrid polymer metal oxide memristors, SCIENTIFIC REPORTS, Vol: 10, ISSN: 2045-2322
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- Citations: 4
Giotis C, Serb A, Stathopoulos S, et al., 2020, Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part I: Characterization, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 67, Pages: 5158-5165, ISSN: 0018-9383
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- Citations: 8
Giotis C, Serb A, Stathopoulos S, et al., 2020, Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part II: Modeling, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 67, Pages: 5166-5173, ISSN: 0018-9383
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- Citations: 6
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