BibTex format
@inproceedings{Shen:2021,
author = {Shen, J and Stathopoulos, S and Prodromakis, T and Papavassiliou, C},
title = {A reconfigurable CMOS-memristor active inductor},
year = {2021}
}
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Citation
RIS format (EndNote, RefMan)
TY - CPAPER
AB - A methodology is introduced here to exploit the programmability of the memristors in order to realize reconfigurable monolithic analogue circuit elements. Classical network synthesis methods are used to synthesize adjustable active inductors with inductance values exceeding those of on-chip passives by several orders of magnitude. In this paper, a wide range of active inductance values are obtained by employing memristor to control the biasing current of operational transconductance amplifiers used to implement gyrators. The gyration constant of the proposed gyrator will be linearly controlled by memristance state. The implementation of the designed circuit is realized in 0.18µm commercially available complementary metal-oxide-semiconductor (CMOS) technology from TSMC. Circuit performance is simulated using Cadence Virtuoso. The utilized off-chip memristor is a metal-oxide bi-layer memristor which exhibits a non-volatile memristance range of 4.7kΩ to 170kΩ. The active inductance range achieved is from approximately 95µH to 1.55mH with an inductive bandwidth of 69MHz and 18MHz respectively. The total power consumption is between 0.21mW to 1.95mW depending on the memristance and equivalent inductance.
AU - Shen,J
AU - Stathopoulos,S
AU - Prodromakis,T
AU - Papavassiliou,C
PY - 2021///
SN - 0271-4310
TI - A reconfigurable CMOS-memristor active inductor
ER -