Imperial College London
Alternate

Professor Themis Prodromakis

Faculty of Engineering, Department of Electrical and Electronic Engineering

Honorary Research Fellow
 
 
 
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Contact

 

+44 (0)20 7594 0840t.prodromakis Website

 
 
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Location

 

B422Bessemer BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@inproceedings{Simanjuntak:2022:10.1109/IES55876.2022.9888713,
author = {Simanjuntak, FM and Talbi, F and Kerrigan, A and Lazarov, VK and Prodromakis, T},
doi = {10.1109/IES55876.2022.9888713},
pages = {171--175},
title = {Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications},
url = {http://dx.doi.org/10.1109/IES55876.2022.9888713},
year = {2022}
}
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RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.
AU  - Simanjuntak,FM
AU  - Talbi,F
AU  - Kerrigan,A
AU  - Lazarov,VK
AU  - Prodromakis,T
DO  - 10.1109/IES55876.2022.9888713
EP  - 175
PY  - 2022///
SP  - 171
TI  - Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications
UR  - http://dx.doi.org/10.1109/IES55876.2022.9888713
ER  -
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