Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

314 results found

Anthopoulos TD, Markham JPJ, Namdas EB, Samuel IDW, Lo SC, Burn PLet al., 2003, Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport, APPLIED PHYSICS LETTERS, Vol: 82, Pages: 4824-4826, ISSN: 0003-6951

JOURNAL ARTICLE

Markham JPJ, Lo SC, Anthopoulos TD, Male NH, Balasubramaniam E, Salata OV, Burn PL, Samuel IDWet al., 2003, Highly efficient solution-processible phosphorescent dendrimers for organic light-emitting diodes, Pages: 161-166, ISSN: 1071-0922

Currently, most research into organic light-emitting diodes (OLEDs) has focused on two main classes of materials: small organic molecules and conjugated polymers. An alternative approach is to use conjugated dendrimers. We show that conjugated dendrimers are a promising new class of solution-processible materials for use as the active layer in highly efficient organic LEDs. By optimizing the choice of device structure, host material, and electron transport layer, we can obtain efficiencies of 55 cd/A and power efficiencies of 40 Im/W. This is an excellent result for a spin-coated emissive laver.

CONFERENCE PAPER

Anthopoulos TD, Shafai TS, 2003, Oxygen induced p-doping of alpha-nickel phthalocyanine vacuum sublimed films: Implication for its use in organic photovoltaics, APPLIED PHYSICS LETTERS, Vol: 82, Pages: 1628-1630, ISSN: 0003-6951

JOURNAL ARTICLE

Markham JPJ, Anthopoulos TD, Samuel IDW, Richards GJ, Burn PL, Im C, Bassler Het al., 2002, Nondispersive hole transport in a spin-coated dendrimer film measured by the charge-generation-layer time-of-flight method, APPLIED PHYSICS LETTERS, Vol: 81, Pages: 3266-3268, ISSN: 0003-6951

JOURNAL ARTICLE

Anthopoulos TD, Shafai TS, 2002, Effects of temperature on electronic properties of nickel phthalocyanine thin sandwich film structures, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol: 20, Pages: 295-298, ISSN: 0734-2101

JOURNAL ARTICLE

Markham JPJ, Lo SC, Male NH, Anthopoulos T, Salata O, Burn PL, Samuel IDWet al., 2002, Efficient electrophosphorescent dendrimer LEDs, 15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Publisher: IEEE, Pages: 195-196, ISSN: 1092-8081

CONFERENCE PAPER

Shafai TS, Anthopoulos TD, 2001, Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes, 28th International Conference on Metallurgical Coatings and Thin Films, Publisher: ELSEVIER SCIENCE SA, Pages: 361-367, ISSN: 0040-6090

CONFERENCE PAPER

Anthopoulos TD, Shafai TS, 2001, Junction properties of nickel phthalocyanine thin sandwich film structures using dissimilar electrodes, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol: 186, Pages: 89-97, ISSN: 0031-8965

JOURNAL ARTICLE

Anthopoulos TD, Shafai TS, 2001, Junction Properties of Nickel Phthalocyanine Thin Sandwich Film Structures Using Dissimilar Electrodes, Physica Status Solidi (A) Applied Research, Vol: 186, Pages: 89-97, ISSN: 0031-8965

Multilayer sandwich structures of Au/NiPc/Pb were fabricated in-situ utilising a sequential deposition technique. Electrical measurements were performed on both in-situ and oxygen-doped samples. Under forward bias conditions, at low voltages, Ohmic conduction, and at higher voltages SCLC were identified. However, in the reverse bias, a transition from electrode limited to bulk limited conduction process was evident. Depletion region width as well as the potential barrier height (φb) at the NiPc/Pb interface were calculated from the reverse J-V characteristics yielding values of 183 nm and 1.03 eV, respectively. After exposure to dry air a strong rectifying effect was observed. The latter is suggested to be associated with the change in the work function of NiPc as a result of oxygen adsorption. The potential barrier height for oxygen-doped samples was calculated yielding a value in the range of 0.955-0.96 eV. Hole and trap parameters, for both in-situ and oxygen-doped sample devices were also evaluated. Derived values suggested that trap concentration associated with higher voltage characteristic is significantly higher for the oxygen-doped sample. This type of behaviour is strongly believed to be due to an oxidisation process occurring near the NiPc/Pb interface.

JOURNAL ARTICLE

Anthopoulos TD, Shafai TS, 2000, SCLC measurements in nickel phthalocyanine thin films, Physica Status Solidi (A) Applied Research, Vol: 181, Pages: 569-574, ISSN: 0031-8965

Sandwich structures of Au/NiPc/Au were fabricated by sequential vacuum thermal sublimation onto borosilicate glass substrates. dc electrical measurements were performed for several NiPc thin films of different thickness in the range (d = 0.25-1.09 μm). The relative permittivity was measured at a low frequency of 100 Hz, yielding a value of εr = 2.74. This value is considerably lower in comparison with previously published data for various phthalocyanine materials. Current density-voltage characteristics at room temperature reveal an Ohmic conduction in the lower voltage range, followed by SCLC in the higher range, where the latter was found to be controlled by an exponential trap distribution. The plot of current density versus thickness provides further evidence of this effect. The results are analyzed in terms of exponential trap distribution yielding the following values: The temperature parameter characterizing the exponential trap distribution Tt = 1165 K, the concentration of thermally generated holes p0 = 1.40 × 1016 m-3, trap concentration per unit energy range P0 = 4.71 × 1043 J-1 m-3 and total concentration of traps Nt(e) = 7.57 × 1023 m-3.

JOURNAL ARTICLE

Anthopoulos TD, Shafai TS, 2000, SCLC measurements in nickel phthalocyanine thin films, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol: 181, Pages: 569-574, ISSN: 0031-8965

JOURNAL ARTICLE

Anthopoulos T, Shafai TS, 2000, Sequential turret source-masking system for fabrication of multilayer structures, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol: 18, Pages: 2595-2596, ISSN: 0734-2101

JOURNAL ARTICLE

Anthopoulos TD, Shafai TS, 2000, Influence of O-2 on rectification properties of nickel phthalocyanine thin film devices, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO 2000), Publisher: IEEE, Pages: 179-184

CONFERENCE PAPER

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WORKING PAPER

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