385 results found
Zheng X, Hou Y, Bao C, et al., 2020, Managing grains and interfaces via ligand anchoring enables 22.3%-efficiency inverted perovskite solar cells, NATURE ENERGY, Vol: 5, Pages: 131-140, ISSN: 2058-7546
Wadsworth A, Chen H, Thorley KJ, et al., 2020, Modification of Indacenodithiophene-Based Polymers and Its Impact on Charge Carrier Mobility in Organic Thin-Film Transistors, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 142, Pages: 652-664, ISSN: 0002-7863
Hallani RK, Moser M, Bristow H, et al., 2020, Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates, JOURNAL OF ORGANIC CHEMISTRY, Vol: 85, Pages: 277-283, ISSN: 0022-3263
Aljarb A, Fu JH, Hsu CC, et al., 2020, Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides, Nature Materials, ISSN: 1476-1122
© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.
Troughton J, Neophytou M, Gasparini N, et al., 2020, A universal solution processed interfacial bilayer enabling ohmic contact in organic and hybrid optoelectronic devices, ENERGY & ENVIRONMENTAL SCIENCE, Vol: 13, Pages: 268-276, ISSN: 1754-5692
Basu A, Niazi MR, Scaccabarozzi AD, et al., 2020, Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors, Journal of Materials Chemistry C, ISSN: 2050-7526
<p>Blade-coating is used to fabricate high hole mobility organic transistors based on a p-doped small-molecule:polymer blend semiconductor.</p>
Kumar M, Georgiadou DG, Seitkhan A, et al., 2019, Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions, ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Nam S, Chaudhry MU, Tetzner K, et al., 2019, Efficient and Stable Solution-Processed Organic Light-Emitting Transistors Using a High-k Dielectric, ACS PHOTONICS, Vol: 6, Pages: 3159-3165, ISSN: 2330-4022
Lin Y-H, Li W, Faber H, et al., 2019, Hybrid organic-metal oxide multilayer channel transistors with high operational stability, NATURE ELECTRONICS, Vol: 2, Pages: 587-595, ISSN: 2520-1131
Chen H, Wadsworth A, Ma C, et al., 2019, The Effect of Ring Expansion in Thienobenzo[b]indacenodithiophene Polymers for Organic Field-Effect Transistors, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 141, Pages: 18806-18813, ISSN: 0002-7863
Chaudhry MU, Panidi J, Nam S, et al., 2019, Polymer Light-Emitting Transistors With Charge-Carrier Mobilities Exceeding 1 cm(2) V-1 s(-1), ADVANCED ELECTRONIC MATERIALS, Vol: 6, ISSN: 2199-160X
Neophytou M, De Bastiani M, Gasparini N, et al., 2019, Enhancing the Charge Extraction and Stability of Perovskite Solar Cells Using Strontium Titanate (SrTiO3) Electron Transport Layer, ACS APPLIED ENERGY MATERIALS, Vol: 2, Pages: 8090-8097, ISSN: 2574-0962
Faber H, Anthopoulos TD, 2019, Adding a new layer to 'more than Moore', NATURE ELECTRONICS, Vol: 2, Pages: 497-498, ISSN: 2520-1131
Barrit D, Cheng P, Tang M-C, et al., 2019, Impact of the Solvation State of Lead Iodide on Its Two-Step Conversion to MAPbI(3): An In Situ Investigation, ADVANCED FUNCTIONAL MATERIALS, Vol: 29, ISSN: 1616-301X
Li Z, Li H, Jiang K, et al., 2019, Self-Powered Perovskite/CdS Heterostructure Photodetectors, ACS APPLIED MATERIALS & INTERFACES, Vol: 11, Pages: 40204-40213, ISSN: 1944-8244
Yarali E, Koutsiaki C, Faber H, et al., 2019, Recent Progress in Photonic Processing of Metal-Oxide Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 30, ISSN: 1616-301X
He Q, Shahid M, Wu J, et al., 2019, Fused Cyclopentadithienothiophene acceptor enables ultrahigh short‐circuit current and high efficiency >11% in as‐cast organic solar cells, Advanced Functional Materials, Vol: 29, Pages: 1-7, ISSN: 1616-301X
A new method to synthesize an electron‐rich building block cyclopentadithienothiophene (9H‐thieno‐[3,2‐b]thieno[2″,3″:4′,5′]thieno[2′,3′:3,4]cyclopenta[1,2‐d]thiophene, CDTT) via a facile aromatic extension strategy is reported. By combining CDTT with 1,1‐dicyanomethylene‐3‐indanone endgroups, a promising nonfullerene small molecule acceptor (CDTTIC) is prepared. As‐cast, single‐junction nonfullerene organic solar cells based on PFBDB‐T: CDTTIC blends exhibit very high short‐circuit currents up to 26.2 mA cm−2 in combination with power conversion efficiencies over 11% without any additional processing treatments. The high photocurrent results from the near‐infrared absorption of the CDTTIC acceptor and the well‐intermixed blend morphology of polymer donor PFBDB‐T and CDTTIC. This work demonstrates a useful fused ring extension strategy and promising solar cell results, indicating the great potential of the CDTT derivatives as electron‐rich building blocks for constructing high‐performance small molecule acceptors in organic solar cells.
Lin Y-H, Huang W, Pattanasattayavong P, et al., 2019, Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors, NATURE COMMUNICATIONS, Vol: 10, ISSN: 2041-1723
Ray S, Panidi J, Mukhopadhay T, et al., 2019, Electrochemical Stability and Ambipolar Charge Transport in Diketopyrrolopyrrole-Based Organic Materials, ACS APPLIED ELECTRONIC MATERIALS, Vol: 1, Pages: 2037-2046, ISSN: 2637-6113
Anthopoulos TD, 2019, Ultrathin channels make transistors go faster, NATURE MATERIALS, Vol: 18, Pages: 1033-1034, ISSN: 1476-1122
Lin Y, Adilbekova B, Firdaus Y, et al., 2019, 17% Efficient Organic Solar Cells Based on Liquid Exfoliated WS2 as a Replacement for PEDOT:PSS, ADVANCED MATERIALS, Vol: 31, ISSN: 0935-9648
Seitkhan A, Neophytou M, Kirkus M, et al., 2019, Use of the Phen-NaDPO:Sn(SCN)(2) Blend as Electron Transport Layer Results to Consistent Efficiency Improvements in Organic and Hybrid Perovskite Solar Cells, ADVANCED FUNCTIONAL MATERIALS, Vol: 29, ISSN: 1616-301X
Panidi J, Kainth J, Paterson AF, et al., 2019, Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors, Advanced Functional Materials, Vol: 29, Pages: 1-10, ISSN: 1616-301X
KGaA, Weinheim Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p-type dopants, work on their n-type counterparts is comparatively limited. Here, reported is the previously unexplored n-dopant (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl- 13,18[1′,2′]-benzenobisbenzimidazo [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazo-cine potassium triflate adduct (DMBI-BDZC) and its application in organic thin-film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2′-bithiophene)] and a small-molecule naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) are used to study the effectiveness of DMBI-BDZC as a n-dopant. N-doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI-BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n-doping activity of DMBI-BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground-state electron transfer as the main doping mechanism. The work highlights DMBI-BDZC as a promising n-type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.
Zheng X, Troughton J, Gasparini N, et al., 2019, Quantum Dots Supply Bulk- and Surface-Passivation Agents for Efficient and Stable Perovskite Solar Cells, JOULE, Vol: 3, Pages: 1963-1976, ISSN: 2542-4351
Ma C, Liu C, Huang J, et al., 2019, Plasmonic-Enhanced Light Harvesting and Perovskite Solar Cell Performance Using Au Biometric Dimers with Broadband Structural Darkness, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Khan JI, Ashraf RS, Alamoudi MA, et al., 2019, P3HT Molecular Weight Determines the Performance of P3HT:O-IDTBR Solar Cells, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Wu Y, Li M, Wahyudi W, et al., 2019, Performance and Stability Improvement of Layered NCM Lithium-Ion Batteries at High Voltage by a Microporous Al2O3 Sol-Gel Coating, ACS OMEGA, Vol: 4, Pages: 13972-13980, ISSN: 2470-1343
Lin Y, Yu L, Xia Y, et al., 2019, One-Step Blade-Coated Highly Efficient Nonfullerene Organic Solar Cells with a Self-Assembled Interfacial Layer Enabled by Solvent Vapor Annealing, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Paterson AF, Faber H, Savva A, et al., 2019, On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors., Adv Mater, Pages: e1902291-e1902291
Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n-type OECTs, the first demonstration of source/drain-electrode surface modification for achieving state-of-the-art n-type OECTs is reported. Specifically, thiol-based self-assembled monolayers (SAMs), 4-methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n-type accumulation-mode OECTs made from the hydrophilic copolymer P-90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three-fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM-enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n-type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n-type OECTs.
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