Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

333 results found

Dhar J, Mukhopadhay T, Yaacobi-Gross N, Anthopoulos TD, Salzner U, Swaraj S, Patil Set al., 2015, Effect of Chalcogens on Electronic and Photophysical Properties of Vinylene-Based Diketopyrrolopyrrole Copolymers, JOURNAL OF PHYSICAL CHEMISTRY B, Vol: 119, Pages: 11307-11316, ISSN: 1520-6106

Journal article

Wijeyasinghe N, Anthopoulos TD, 2015, Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics, Semiconductor Science and Technology, Vol: 30, ISSN: 1361-6641

Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including transparent thin-film transistors, high-efficiency organic and hybrid organic-inorganic photovoltaic cells, and organic light-emitting diodes. CuSCN combinesintrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum.Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The meritsof using CuSCN in numerous emerging applications as an alternative to conventional holetransport materials are also discussed.

Journal article

Fallon KJ, Wijeyasinghe N, Yaacobi-Gross N, Ashraf RS, Freeman DME, Palgrave RG, Al-Hashimi M, Marks TJ, McCulloch I, Anthopoulos TD, Bronstein Het al., 2015, A Nature-Inspired Conjugated Polymer for High Performance Transistors and Solar Cells, MACROMOLECULES, Vol: 48, Pages: 5148-5154, ISSN: 0024-9297

Journal article

Zhong H, Han Y, Shaw J, Anthopoulos TD, Heeney Met al., 2015, Fused ring cyclopentadithienothiophenes as novel building blocks for high field effect mobility conjugated polymers, Macromolecules, Vol: 48, Pages: 5605-5613, ISSN: 0024-9297

Journal article

Treat ND, Yaacobi-Gross N, Faber H, Perumal AK, Bradley DDC, Stingelin N, Anthopoulos TDet al., 2015, Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells, Applied Physics Letters, Vol: 107, ISSN: 1077-3118

We report the advantageous properties of the inorganic molecular semiconductor copper(I)thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic(OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at 5.35 eV,0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], whichproduces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-baseddevices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditionsis achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achievePCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacementfor the commonly used PEDOT:PSS.

Journal article

Schroeder BC, Nielsen CB, Westacott P, Smith J, Rossbauer S, Anthopoulos TD, Stingelin N, McCulloch Iet al., 2015, Effects of alkyl chain positioning on conjugated polymer microstructure and field-effect mobilities, MRS Communications, Vol: 5, Pages: 435-440, ISSN: 2159-6867

Journal article

Peng Y, Yaacobi-Gross N, Perumal AK, Faber HA, Vourlias G, Patsalas PA, Bradley DDC, He Z, Anthopoulos TDet al., 2015, Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers, Applied Physics Letters, Vol: 106, ISSN: 1077-3118

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulkheterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transportlayer (HTL). Our devices exhibit a PCE value of 5.5% which is equivalent to that obtained forcontrol devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate as HTL. Inverted cells with PCE>3% were also demonstrated using solutionprocessedmetal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. Thehigh optical transparency and suitable energetics of CuI make it attractive for application in a range ofinexpensive large-area optoelectronic devices.

Journal article

Hunter BS, Ward JW, Payne MM, Anthony JE, Jurchescu OD, Anthopoulos TDet al., 2015, Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition, Applied Physics Letters, Vol: 106, ISSN: 1077-3118

Organic thin-film electronics have long been considered an enticing candidate in achieving highthroughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques.Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions(air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2 /Vs are realized at 4 V operation, and unipolar inverters operating at 6 V are demonstrated.

Journal article

Lin Y-H, Faber H, Labram JG, Stratakis E, Sygellou L, Kymakis E, Hastas NA, Li R, Zhao K, Amassian A, Treat ND, McLachlan M, Anthopoulos TDet al., 2015, High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices, Advanced Science, Vol: 2, ISSN: 2198-3844

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

Journal article

Bottacchi F, 2015, Polymer-sorted (6,5) single-walled carbon nanotubes for solution-processed low-voltage flexible microelectronics, Applied Physics Letters, Vol: 106, ISSN: 0003-6951

We report on low operating voltage transistors based on polymer-sorted semiconducting (6,5) single-walled carbon nanotube (SWNT) networks processed from solution at room temperature. The (6,5) SWNTs were separated from the as-received carbon nanotubes mixture using a polyfluorene-based derivative as the sorting and dispersing polymer agent. As-prepared devices exhibit primarily p-type behavior with channel current on/off ratio >103 and hole mobility ≈2 cm2 V−1 s−1. These transistor characteristics enable realization of low-voltage unipolar inverters with wide noise margins and high signal gain (>5). Polymer/(6,5) SWNT transistors were also fabricated on free-standing polyimide foils. The devices exhibit even higher hole mobility (≈8 cm2 V−1 s−1) and on/off ratios (>104) while remaining fully functional when bent to a radius of 4 mm.

Journal article

Andernach RE, Rossbauer S, Ashraf RS, Faber H, Anthopoulos TD, McCulloch I, Heeney M, Bronstein HAet al., 2015, Conjugated Polymer-Porphyrin Complexes for Organic Electronics, CHEMPHYSCHEM, Vol: 16, Pages: 1223-1230, ISSN: 1439-4235

Journal article

Pitsalidis C, Pappa A-M, Hunter S, Payne MM, Anthony JE, Anthopoulos TD, Logothetidis Set al., 2015, Electrospray-Processed Soluble Acenes toward the Realization of High-Performance Field-Effect Transistors, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 6496-6504, ISSN: 1944-8244

Journal article

Petti L, Faber H, Muenzenrieder N, Cantarella G, Patsalas PA, Troester G, Anthopoulos TDet al., 2015, Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits, Applied Physics Letters, Vol: 106, ISSN: 1077-3118

Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

Journal article

Labram JG, Lin Y-H, Zhao K, Li R, Thomas SR, Semple J, Androulidaki M, Sygellou L, McLachlan M, Stratakis E, Amassian A, Anthopoulos TDet al., 2015, Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices, Advanced Functional Materials, Vol: 25, Pages: 1727-1736, ISSN: 1616-3028

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2–24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current–voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2–7.

Journal article

Faber H, Lin Y-H, Thomas SR, Zhao K, Pliatsikas N, McLachlan MA, Amassian A, Patsalas PA, Anthopoulos TDet al., 2015, Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 782-790, ISSN: 1944-8244

Journal article

Paterson AF, Anthopoulos TD, 2015, Organic blend semiconductors and transistors with hole mobility exceeding 10 cm2/Vs, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X

Conference paper

Singh R, Pagona G, Gregoriou VG, Tagmatarchis N, Toliopoulos D, Han Y, Fei Z, Katsouras A, Avgeropoulos A, Anthopoulos TD, Heeney M, Keivanidis PE, Chochos CLet al., 2015, The impact of thienothiophene isomeric structures on the optoelectronic properties and photovoltaic performance in quinoxaline based donor-acceptor copolymers, POLYMER CHEMISTRY, Vol: 6, Pages: 3098-3109, ISSN: 1759-9954

Journal article

Hermerschmidt F, Kalogirou AS, Min J, Zissimou GA, Tuladhar SM, Ameri T, Faber H, Itskos G, Choulis SA, Anthopoulos TD, Bradley DDC, Nelson J, Brabec CJ, Koutentis PAet al., 2015, 4H-1,2,6-Thiadiazin-4-one-containing small molecule donors and additive effects on their performance in solution-processed organic solar cells, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 2358-2365, ISSN: 2050-7526

Journal article

Steiner F, Foster S, Losquin A, Labram J, Anthopoulos TD, Frost JM, Nelson Jet al., 2015, Distinguishing the influence of structural and energetic disorder on electron transport in fullerene multi-adducts, MATERIALS HORIZONS, Vol: 2, Pages: 113-119, ISSN: 2051-6347

Journal article

Casey A, Han Y, Fei Z, White AJP, Anthopoulos TD, Heeney Met al., 2015, Cyano substituted benzothiadiazole: a novel acceptor inducing n-type behaviour in conjugated polymers, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 265-275, ISSN: 2050-7526

Journal article

Bronstein HA, Falon K, Yaacobi-Gross N, Ashraf RS, McCulloch I, Anthopoulos TDet al., 2015, Novel nature-inspired conjugated polymers for high performance transistors and solar cells, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X

Conference paper

Perumal A, Faber H, Yaacobi-Gross N, Pattanasattayavong P, Burgess C, Jha S, McLachlan MA, Stavrinou PN, Anthopoulos TD, Bradley DDCet al., 2015, High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer, ADVANCED MATERIALS, Vol: 27, Pages: 93-100, ISSN: 0935-9648

Journal article

Lin YH, Zhao K, Li R, Amassian A, Anthopoulos TDet al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 1736-1739, ISSN: 1883-2490

© 2015 Proceedings of the International Display Workshops. All rights reserved. We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.

Conference paper

Lin YH, Zhao K, Li R, Amassian A, Anthopoulos TDet al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 301-304, ISSN: 1883-2490

© 2015 Society for Information Display. We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.

Conference paper

Jeremy S, Simon H, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 559-561, ISSN: 1883-2490

© 2015 Society for Information Display. We report the development of p-channet organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.

Conference paper

Smith J, Hunter S, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 47-49, ISSN: 1883-2490

© 2015 Society for Information Display. We report the development of p-channel organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.

Conference paper

Bottacchi F, 2014, Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters, Technical Digest - International Electron Devices Meeting, Pages: 26.4.1-26.4.1, ISSN: 0163-1918

Journal article

Fei Z, Ashraf RS, Han Y, Wang S, Yau CP, Tuladhar PS, Anthopoulos TD, Chabinyc ML, Heeney Met al., 2014, Diselenogermole as a novel donor monomer for low band gap polymers, Journal of Materials Chemistry A, Vol: 3, Pages: 1986-1994, ISSN: 2050-7496

Journal article

Rossbauer S, Muller C, Anthopoulos TD, 2014, Comparative Study of the N-Type Doping Efficiency in Solution-processed Fullerenes and Fullerene Derivatives, ADVANCED FUNCTIONAL MATERIALS, Vol: 24, Pages: 7116-7124, ISSN: 1616-301X

Journal article

Shoaee S, Mehraeen S, Labram JG, Bredas J-L, Bradley DDC, Coropceanu V, Anthopoulos TD, Durrant JRet al., 2014, Correlating Non-Geminate Recombination with Film Structure: A Comparison of Polythiophene: Fullerene Bilayer and Blend Films, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, Vol: 5, Pages: 3669-3676, ISSN: 1948-7185

Journal article

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