393 results found
Zhong H, Han Y, Shaw J, et al., 2015, Fused ring cyclopentadithienothiophenes as novel building blocks for high field effect mobility conjugated polymers, Macromolecules, Vol: 48, Pages: 5605-5613, ISSN: 0024-9297
Treat ND, Yaacobi-Gross N, Faber H, et al., 2015, Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells, Applied Physics Letters, Vol: 107, ISSN: 1077-3118
We report the advantageous properties of the inorganic molecular semiconductor copper(I)thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic(OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at 5.35 eV,0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], whichproduces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-baseddevices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditionsis achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achievePCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacementfor the commonly used PEDOT:PSS.
Schroeder BC, Nielsen CB, Westacott P, et al., 2015, Effects of alkyl chain positioning on conjugated polymer microstructure and field-effect mobilities, MRS Communications, Vol: 5, Pages: 435-440, ISSN: 2159-6867
Peng Y, Yaacobi-Gross N, Perumal AK, et al., 2015, Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers, Applied Physics Letters, Vol: 106, ISSN: 1077-3118
We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulkheterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transportlayer (HTL). Our devices exhibit a PCE value of 5.5% which is equivalent to that obtained forcontrol devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate as HTL. Inverted cells with PCE>3% were also demonstrated using solutionprocessedmetal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. Thehigh optical transparency and suitable energetics of CuI make it attractive for application in a range ofinexpensive large-area optoelectronic devices.
Hunter BS, Ward JW, Payne MM, et al., 2015, Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition, Applied Physics Letters, Vol: 106, ISSN: 1077-3118
Organic thin-film electronics have long been considered an enticing candidate in achieving highthroughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques.Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions(air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2 /Vs are realized at 4 V operation, and unipolar inverters operating at 6 V are demonstrated.
Lin Y-H, Faber H, Labram JG, et al., 2015, High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices, Advanced Science, Vol: 2, ISSN: 2198-3844
High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
Bottacchi F, 2015, Polymer-sorted (6,5) single-walled carbon nanotubes for solution-processed low-voltage flexible microelectronics, Applied Physics Letters, Vol: 106, ISSN: 0003-6951
We report on low operating voltage transistors based on polymer-sorted semiconducting (6,5) single-walled carbon nanotube (SWNT) networks processed from solution at room temperature. The (6,5) SWNTs were separated from the as-received carbon nanotubes mixture using a polyfluorene-based derivative as the sorting and dispersing polymer agent. As-prepared devices exhibit primarily p-type behavior with channel current on/off ratio >103 and hole mobility ≈2 cm2 V−1 s−1. These transistor characteristics enable realization of low-voltage unipolar inverters with wide noise margins and high signal gain (>5). Polymer/(6,5) SWNT transistors were also fabricated on free-standing polyimide foils. The devices exhibit even higher hole mobility (≈8 cm2 V−1 s−1) and on/off ratios (>104) while remaining fully functional when bent to a radius of 4 mm.
Andernach RE, Rossbauer S, Ashraf RS, et al., 2015, Conjugated Polymer-Porphyrin Complexes for Organic Electronics, CHEMPHYSCHEM, Vol: 16, Pages: 1223-1230, ISSN: 1439-4235
Pitsalidis C, Pappa A-M, Hunter S, et al., 2015, Electrospray-Processed Soluble Acenes toward the Realization of High-Performance Field-Effect Transistors, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 6496-6504, ISSN: 1944-8244
Casey A, Han Y, Fei Z, et al., 2015, Cyano substituted benzothiadiazoles: Novel acceptor units allowing systematic lowering of conjugated polymer LUMO levels, Publisher: AMER CHEMICAL SOC, ISSN: 0065-7727
Petti L, Faber H, Muenzenrieder N, et al., 2015, Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits, Applied Physics Letters, Vol: 106, ISSN: 1077-3118
Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.
Labram JG, Lin Y-H, Zhao K, et al., 2015, Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices, Advanced Functional Materials, Vol: 25, Pages: 1727-1736, ISSN: 1616-3028
Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2–24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current–voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2–7.
Faber H, Lin Y-H, Thomas SR, et al., 2015, Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 782-790, ISSN: 1944-8244
Perumal A, Faber H, Yaacobi-Gross N, et al., 2015, High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer, ADVANCED MATERIALS, Vol: 27, Pages: 93-100, ISSN: 0935-9648
Casey A, Han Y, Fei Z, et al., 2015, Cyano substituted benzothiadiazole: a novel acceptor inducing n-type behaviour in conjugated polymers, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 265-275, ISSN: 2050-7526
Steiner F, Foster S, Losquin A, et al., 2015, Distinguishing the influence of structural and energetic disorder on electron transport in fullerene multi-adducts, MATERIALS HORIZONS, Vol: 2, Pages: 113-119, ISSN: 2051-6347
Hermerschmidt F, Kalogirou AS, Min J, et al., 2015, 4H-1,2,6-Thiadiazin-4-one-containing small molecule donors and additive effects on their performance in solution-processed organic solar cells, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 2358-2365, ISSN: 2050-7526
Singh R, Pagona G, Gregoriou VG, et al., 2015, The impact of thienothiophene isomeric structures on the optoelectronic properties and photovoltaic performance in quinoxaline based donor-acceptor copolymers, POLYMER CHEMISTRY, Vol: 6, Pages: 3098-3109, ISSN: 1759-9954
Bronstein HA, Falon K, Yaacobi-Gross N, et al., 2015, Novel nature-inspired conjugated polymers for high performance transistors and solar cells, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
Paterson AF, Anthopoulos TD, 2015, Organic blend semiconductors and transistors with hole mobility exceeding 10 cm2/Vs, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
Lin YH, Zhao K, Li R, et al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 1736-1739, ISSN: 1883-2490
© 2015 Proceedings of the International Display Workshops. All rights reserved. We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.
Lin YH, Zhao K, Li R, et al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 301-304, ISSN: 1883-2490
© 2015 Society for Information Display. We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.
Jeremy S, Simon H, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 559-561, ISSN: 1883-2490
© 2015 Society for Information Display. We report the development of p-channet organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.
Smith J, Hunter S, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 47-49, ISSN: 1883-2490
© 2015 Society for Information Display. We report the development of p-channel organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.
Bottacchi F, 2014, Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters, Technical Digest - International Electron Devices Meeting, Pages: 26.4.1-26.4.1, ISSN: 0163-1918
Fei Z, Ashraf RS, Han Y, et al., 2014, Diselenogermole as a novel donor monomer for low band gap polymers, Journal of Materials Chemistry A, Vol: 3, Pages: 1986-1994, ISSN: 2050-7496
Rossbauer S, Muller C, Anthopoulos TD, 2014, Comparative Study of the N-Type Doping Efficiency in Solution-processed Fullerenes and Fullerene Derivatives, ADVANCED FUNCTIONAL MATERIALS, Vol: 24, Pages: 7116-7124, ISSN: 1616-301X
Shoaee S, Mehraeen S, Labram JG, et al., 2014, Correlating Non-Geminate Recombination with Film Structure: A Comparison of Polythiophene: Fullerene Bilayer and Blend Films, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, Vol: 5, Pages: 3669-3676, ISSN: 1948-7185
Fei Z, Pattanasattayavong P, Han Y, et al., 2014, Influence of Side-Chain Regiochemistry on the Transistor Performance of High-Mobility, All-Donor Polymers, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 136, Pages: 15154-15157, ISSN: 0002-7863
Hunter S, Chen J, Anthopoulos TD, 2014, Microstructural Control of Charge Transport in Organic Blend Thin-Film Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 24, Pages: 5969-5976, ISSN: 1616-301X
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