329 results found
Bashir A, Woebkenberg PH, Smith J, et al., 2009, High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere, ADVANCED MATERIALS, Vol: 21, Pages: 2226-+, ISSN: 0935-9648
Hamilton R, Smith J, Ogier S, et al., 2009, High-Performance Polymer-Small Molecule Blend Organic Transistors, ADVANCED MATERIALS, Vol: 21, Pages: 1166-1171, ISSN: 0935-9648
Hamilton R, Heeney M, Anthopoulos T, et al., 2009, Development of polymer semiconductors for field-effect transistor devices in displays, Organic Electronics: Materials, Processing, Devices and Applications, Pages: 393-429, ISBN: 9781420072907
© 2010 by Taylor & Francis Group, LLC. The increasingly impressive electrical performance of organic semiconductors is driving the development of solution-based printing processes aimed at low cost fabrication of transistor devices. The most immediate application area will most likely be in active matrix displays, where transistors are used in the backplane circuitry, operating basically as an individual pixel switch. In liquid crystal displays (LCDs) and electrophoretic displays (EPDs), the transistor charges both the pixel and storage capacitor, whereas in an organic light-emitting diode display (OLED), the transistor delivers current to the diode element. Most medium and large size LCDs, i.e., monitor and television displays, employ amorphous silicon as the transistor semiconductor (high resolution displays often require polysilicon), with a charge carrier mobility of the order of 0.5 cm2/V s. The EPD effect can tolerate a lower performance from backplane transistors and is hence the most compatible with the performance limitations of organic transistors. As the EPD effect is reflective, the pixel transistor can occupy almost the full area underneath the pixel, in contrast to transmissive display effects such as LCD, where the opaque transistors block light from the backlight and therefore must be as small as possible (i.e., the pixel should have a high aperture ratio) to maximize the efficiency. This means that the EPD transistor width (W) is maximized and can deliver more current per pixel compensating for low mobility semiconductors. As a result, mobility specifications are in the region of 0.01 cm2/V s for a device with low refresh rates, low resolution, and small size. Another favorable aspect of the EPD effect is that once the pixel and storage capacitor is charged, no further power is required to retain the image, i.e., it is bistable. Thus the duty cycle load on the transistor is minimized, and subsequently the devices can potentially have long
Smith J, Hamilton R, Heeney M, et al., 2008, High-performance organic integrated circuits based on solution processable polymer-small molecule blends, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951
Ball J, Wöbkenberg PH, Colléaux F, et al., 2008, Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors, Pages: 20-25, ISSN: 0272-9172
Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.
Woebkenberg PH, Ball J, Kooistra FB, et al., 2008, Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951
Woebkenberg PH, Bradley DDC, Kronholm D, et al., 2008, High mobility n-channel organic field-effect transistors based on soluble C-60 and C-70 fullerene derivatives, SYNTHETIC METALS, Vol: 158, Pages: 468-472, ISSN: 0379-6779
Wobkenberg PH, Ball J, Bradley DDC, et al., 2008, Fluorine containing C-60 derivatives for high-performance electron transporting field-effect transistors and integrated circuits, APPLIED PHYSICS LETTERS, Vol: 92, ISSN: 0003-6951
Campoy-Quiles M, Ferenczi T, Agostinelli T, et al., 2008, Morphology evolution via self-organization and lateral and vertical diffusion in polymer: fullerene solar cell blends, NATURE MATERIALS, Vol: 7, Pages: 158-164, ISSN: 1476-1122
Anthopoulos TD, Woebkenberg PH, Bradley DDC, 2008, Light-sensing ambipolar organic transistors for optoelectronic applications, Conference on Organic Optoelectronics and Photonics III, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
Pang H, Vilela F, Skabara PJ, et al., 2007, Advantageous 3D ordering of pi-conjugated systems: A new approach towards efficient charge transport any direction, ADVANCED MATERIALS, Vol: 19, Pages: 4438-+, ISSN: 0935-9648
Nguyen TD, Sheng Y, Wohlgenannt M, et al., 2007, On the role of hydrogen in organic magnetoresistance: A study of C-60 devices, SYNTHETIC METALS, Vol: 157, Pages: 930-934, ISSN: 0379-6779
Anthopoulos TD, 2007, Electro-optical circuits based on light-sensing ambipolar organic field-effect transistors, APPLIED PHYSICS LETTERS, Vol: 91, ISSN: 0003-6951
Smits ECP, Setayesh S, Anthopoulos TD, et al., 2007, Near-infrared light-emitting ambipolar organic field-effect transistors, ADVANCED MATERIALS, Vol: 19, Pages: 734-+, ISSN: 0935-9648
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2007, Subpicosecond photoinduced Stark spectroscopy in fullerene-based devices, PHYSICAL REVIEW B, Vol: 75, ISSN: 1098-0121
Anthopoulos TD, Singh B, Marjanovic N, et al., 2006, High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films, Applied Physics Letters, Vol: 89
de Haas MP, Warman JM, Anthopoulos TD, et al., 2006, The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder, ADVANCED FUNCTIONAL MATERIALS, Vol: 16, Pages: 2274-2280, ISSN: 1616-301X
Warman JM, de Haas MP, Anthopoulos TD, et al., 2006, The negative effect of high-temperature annealing on charge-carrier lifetimes in microcrystalline PCBM, Advanced Materials, Vol: 18, Pages: 2294-2298
Warman JM, de Haas MP, Anthopoulos TD, et al., 2006, The negative effect of high-temperature annealing on charge-carrier lifetimes in microcrystalline PCBM, ADVANCED MATERIALS, Vol: 18, Pages: 2294-+, ISSN: 0935-9648
Anthopoulos TD, Setayesh S, Smits E, et al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, ADVANCED MATERIALS, Vol: 18, Pages: 1900-+, ISSN: 0935-9648
Smits ECP, Anthopoulos TD, Setayesh S, et al., 2006, Ambipolar charge transport in organic field-effect transistors (Article no.205316), Physical Review B (Condensed Matter and Materials Physics), Vol: 73, Pages: 1-9, ISSN: 1098-0121
Smits ECP, Anthopoulos TD, Setayesh S, et al., 2006, Ambipolar charge transport in organic field-effect transistors, PHYSICAL REVIEW B, Vol: 73, ISSN: 1098-0121
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2006, Photoinduced transient stark spectroscopy in organic semiconductors: A method for charge mobility determination in the picosecond regime, PHYSICAL REVIEW LETTERS, Vol: 96, ISSN: 0031-9007
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2006, Ultrafast optoelectronic probing of charge carrier mobility in organic devices
We report sub-picosecond charge mobility measurements in an organic semiconductor obtained by probing with ultrashort pulses the temporal evolution of the electroabsorption signal following ultrafast charge generation. © Optical Society of America.
Lo SC, Namdas EB, Shipley CP, et al., 2006, The synthesis and properties of iridium cored dendrimers with carbazole dendrons, Organic Electronics, Vol: 7, Pages: 85-98, ISSN: 1566-1199
Anthopoulos TD, Setayesh S, Smits E, et al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, Advanced Materials, Vol: 18, Pages: 1900-1904, ISSN: 0935-9648
Anthopoulos TD, Kooistra FB, Wondergem H, et al., 2006, Air-stable n-channel organic transistors based on a soluble C84 fullerene derivative, Advanced Materials -Deerfield Beach Then Weinheim-, Vol: 18, Pages: 1679-1684, ISSN: 0935-9648
Anthopoulos TD, Namdas EB, Ruseckas A, et al., 2005, Dendrimers: Efficient solution-processed phosphorescent OLED materials, Pages: 4-7, ISSN: 1083-1312
Dendrimers are an attractive class of solution-processible materials for organic LEDs. Two aspects of recent dendrimer research are reported, giving new insight into the operation of these materials and devices made from them. The first involves the study of triplet-triplet annihilation using intensity-dependent time-resolved luminescence measurements. The dependence of triplet-triplet annihilation on molecular size is studied and suggests annihilation is the result of a Dexter process. The second aspect of the research reported shows how the structure of the dendrimer can be modified so that a host material is not required.
Namdas EB, Markham JPJ, Anthopoulos TD, et al., 2005, Invited paper: Dendrimers - Efficient solution-processed phosphorescent OLED materials, Pages: 1862-1865, ISSN: 0097-966X
Three aspects of recent dendrimer research are reported. It is shown that highly efficient sky blue phosphorescent devices can be made (external efficiency 10.4%, 11 lm/W at 100 Cd/m2), that blending dendrimers provides a simple way of colour tuning, and finally that luminescence quenching by exciton-exciton annihilation in dendrimer films is weak and can be controlled by the dendrimer generation. These results suggest that dendrimers are very attractive solution processible materials for OLEDs. © 2005 SID.
This data is extracted from the Web of Science and reproduced under a licence from Thomson Reuters. You may not copy or re-distribute this data in whole or in part without the written consent of the Science business of Thomson Reuters.