Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

329 results found

Bashir A, Woebkenberg PH, Smith J, Ball JM, Adamopoulos G, Bradley DDC, Anthopoulos TDet al., 2009, High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere, ADVANCED MATERIALS, Vol: 21, Pages: 2226-+, ISSN: 0935-9648

Journal article

Hamilton R, Smith J, Ogier S, Heeney M, Anthony JE, McCulloch I, Veres J, Bradley DDC, Anthopoulos TDet al., 2009, High-Performance Polymer-Small Molecule Blend Organic Transistors, ADVANCED MATERIALS, Vol: 21, Pages: 1166-1171, ISSN: 0935-9648

Journal article

Hamilton R, Heeney M, Anthopoulos T, McCulloch Iet al., 2009, Development of polymer semiconductors for field-effect transistor devices in displays, Organic Electronics: Materials, Processing, Devices and Applications, Pages: 393-429, ISBN: 9781420072907

© 2010 by Taylor & Francis Group, LLC. The increasingly impressive electrical performance of organic semiconductors is driving the development of solution-based printing processes aimed at low cost fabrication of transistor devices. The most immediate application area will most likely be in active matrix displays, where transistors are used in the backplane circuitry, operating basically as an individual pixel switch. In liquid crystal displays (LCDs) and electrophoretic displays (EPDs), the transistor charges both the pixel and storage capacitor, whereas in an organic light-emitting diode display (OLED), the transistor delivers current to the diode element. Most medium and large size LCDs, i.e., monitor and television displays, employ amorphous silicon as the transistor semiconductor (high resolution displays often require polysilicon), with a charge carrier mobility of the order of 0.5 cm2/V s. The EPD effect can tolerate a lower performance from backplane transistors and is hence the most compatible with the performance limitations of organic transistors. As the EPD effect is reflective, the pixel transistor can occupy almost the full area underneath the pixel, in contrast to transmissive display effects such as LCD, where the opaque transistors block light from the backlight and therefore must be as small as possible (i.e., the pixel should have a high aperture ratio) to maximize the efficiency. This means that the EPD transistor width (W) is maximized and can deliver more current per pixel compensating for low mobility semiconductors. As a result, mobility specifications are in the region of 0.01 cm2/V s for a device with low refresh rates, low resolution, and small size. Another favorable aspect of the EPD effect is that once the pixel and storage capacitor is charged, no further power is required to retain the image, i.e., it is bistable. Thus the duty cycle load on the transistor is minimized, and subsequently the devices can potentially have long

Book chapter

Smith J, Hamilton R, Heeney M, de Leeuw DM, Cantatore E, Anthony JE, McCulloch I, Bradley DDC, Anthopoulos TDet al., 2008, High-performance organic integrated circuits based on solution processable polymer-small molecule blends, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951

Journal article

Ball J, Wöbkenberg PH, Colléaux F, Kooistra FB, Hummelen JC, Bradley DDC, Anthopoulos TDet al., 2008, Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors, Pages: 20-25, ISSN: 0272-9172

Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.

Conference paper

Woebkenberg PH, Ball J, Kooistra FB, Hummelen JC, de Leeuw DM, Bradley DDC, Anthopoulos TDet al., 2008, Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951

Journal article

Woebkenberg PH, Bradley DDC, Kronholm D, Hummelen JC, de Leeuw DM, Coelle M, Anthopoulos TDet al., 2008, High mobility n-channel organic field-effect transistors based on soluble C-60 and C-70 fullerene derivatives, SYNTHETIC METALS, Vol: 158, Pages: 468-472, ISSN: 0379-6779

Journal article

Wobkenberg PH, Ball J, Bradley DDC, Anthopoulos TD, Kooistra F, Hummelen JC, de Leeuw DMet al., 2008, Fluorine containing C-60 derivatives for high-performance electron transporting field-effect transistors and integrated circuits, APPLIED PHYSICS LETTERS, Vol: 92, ISSN: 0003-6951

Journal article

Campoy-Quiles M, Ferenczi T, Agostinelli T, Etchegoin PG, Kim Y, Anthopoulos TD, Stavrinou PN, Bradley DDC, Nelson Jet al., 2008, Morphology evolution via self-organization and lateral and vertical diffusion in polymer: fullerene solar cell blends, NATURE MATERIALS, Vol: 7, Pages: 158-164, ISSN: 1476-1122

Journal article

Anthopoulos TD, Woebkenberg PH, Bradley DDC, 2008, Light-sensing ambipolar organic transistors for optoelectronic applications, Conference on Organic Optoelectronics and Photonics III, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X

Conference paper

Pang H, Vilela F, Skabara PJ, McDouall JJW, Crouch DJ, Anthopoulos TD, Bradley DDC, De Leeuw DM, Horton PN, Hursthouse MBet al., 2007, Advantageous 3D ordering of pi-conjugated systems: A new approach towards efficient charge transport any direction, ADVANCED MATERIALS, Vol: 19, Pages: 4438-+, ISSN: 0935-9648

Journal article

Nguyen TD, Sheng Y, Wohlgenannt M, Anthopoulos TDet al., 2007, On the role of hydrogen in organic magnetoresistance: A study of C-60 devices, SYNTHETIC METALS, Vol: 157, Pages: 930-934, ISSN: 0379-6779

Journal article

Anthopoulos TD, 2007, Electro-optical circuits based on light-sensing ambipolar organic field-effect transistors, APPLIED PHYSICS LETTERS, Vol: 91, ISSN: 0003-6951

Journal article

Anthopoulos TD, Anyfantis GC, Papavassiliou GC, de Leeuw DMet al., 2007, Air-stable ambipolar organic transistors, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951

Journal article

Smits ECP, Setayesh S, Anthopoulos TD, Buechel M, Nijssen W, Coehoorn R, Blom PWM, de Boer B, de Leeuw DMet al., 2007, Near-infrared light-emitting ambipolar organic field-effect transistors, ADVANCED MATERIALS, Vol: 19, Pages: 734-+, ISSN: 0935-9648

Journal article

Cabanillas-Gonzalez J, Virgili T, Gambetta A, Luer L, Lanzani G, Anthopoulos TD, de Leeuw DMet al., 2007, Subpicosecond photoinduced Stark spectroscopy in fullerene-based devices, PHYSICAL REVIEW B, Vol: 75, ISSN: 1098-0121

Journal article

Anthopoulos TD, Singh B, Marjanovic N, Sariciftci NS, Ramil AM, Sitter H, Colle M, de Leeuw DMet al., 2006, High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films, Applied Physics Letters, Vol: 89

Journal article

de Haas MP, Warman JM, Anthopoulos TD, de Leeuw DMet al., 2006, The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder, ADVANCED FUNCTIONAL MATERIALS, Vol: 16, Pages: 2274-2280, ISSN: 1616-301X

Journal article

Warman JM, de Haas MP, Anthopoulos TD, de Leeuw DMet al., 2006, The negative effect of high-temperature annealing on charge-carrier lifetimes in microcrystalline PCBM, Advanced Materials, Vol: 18, Pages: 2294-2298

Journal article

Warman JM, de Haas MP, Anthopoulos TD, de Leeuw DMet al., 2006, The negative effect of high-temperature annealing on charge-carrier lifetimes in microcrystalline PCBM, ADVANCED MATERIALS, Vol: 18, Pages: 2294-+, ISSN: 0935-9648

Journal article

Anthopoulos TD, Setayesh S, Smits E, Colle M, Cantatore E, de Boer B, Blom PWM, de Leeuw DMet al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, ADVANCED MATERIALS, Vol: 18, Pages: 1900-+, ISSN: 0935-9648

Journal article

Smits ECP, Anthopoulos TD, Setayesh S, van Veenendaal E, Coehoorn R, Blom PWM, de Boer B, de Leeuw DMet al., 2006, Ambipolar charge transport in organic field-effect transistors (Article no.205316), Physical Review B (Condensed Matter and Materials Physics), Vol: 73, Pages: 1-9, ISSN: 1098-0121

Journal article

Smits ECP, Anthopoulos TD, Setayesh S, van Veenendaal E, Coehoorn R, Blom PWM, de Boer B, de Leeuw DMet al., 2006, Ambipolar charge transport in organic field-effect transistors, PHYSICAL REVIEW B, Vol: 73, ISSN: 1098-0121

Journal article

Cabanillas-Gonzalez J, Virgili T, Gambetta A, Lanzani G, Anthopoulos TD, de Leeuw DMet al., 2006, Photoinduced transient stark spectroscopy in organic semiconductors: A method for charge mobility determination in the picosecond regime, PHYSICAL REVIEW LETTERS, Vol: 96, ISSN: 0031-9007

Journal article

Cabanillas-Gonzalez J, Virgili T, Gambetta A, Lanzani G, Anthopoulos TD, de Leeuw DMet al., 2006, Ultrafast optoelectronic probing of charge carrier mobility in organic devices

We report sub-picosecond charge mobility measurements in an organic semiconductor obtained by probing with ultrashort pulses the temporal evolution of the electroabsorption signal following ultrafast charge generation. © Optical Society of America.

Conference paper

Lo SC, Namdas EB, Shipley CP, Markham JP, Anthopolous TD, Burn PL, Samuel Iet al., 2006, The synthesis and properties of iridium cored dendrimers with carbazole dendrons, Organic Electronics, Vol: 7, Pages: 85-98, ISSN: 1566-1199

Journal article

Anthopoulos TD, Setayesh S, Smits E, Colle M, Cantatore E, de, Boer B, Blom PWM, de Leeuw DMet al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, Advanced Materials, Vol: 18, Pages: 1900-1904, ISSN: 0935-9648

Journal article

Anthopoulos TD, Kooistra FB, Wondergem H, Kronholm D, Hummelen JC, de Leeuw DMet al., 2006, Air-stable n-channel organic transistors based on a soluble C84 fullerene derivative, Advanced Materials -Deerfield Beach Then Weinheim-, Vol: 18, Pages: 1679-1684, ISSN: 0935-9648

Journal article

Anthopoulos TD, Namdas EB, Ruseckas A, Samuel IDW, Lo SC, Burn PLet al., 2005, Dendrimers: Efficient solution-processed phosphorescent OLED materials, Pages: 4-7, ISSN: 1083-1312

Dendrimers are an attractive class of solution-processible materials for organic LEDs. Two aspects of recent dendrimer research are reported, giving new insight into the operation of these materials and devices made from them. The first involves the study of triplet-triplet annihilation using intensity-dependent time-resolved luminescence measurements. The dependence of triplet-triplet annihilation on molecular size is studied and suggests annihilation is the result of a Dexter process. The second aspect of the research reported shows how the structure of the dendrimer can be modified so that a host material is not required.

Conference paper

Namdas EB, Markham JPJ, Anthopoulos TD, Samuel IDW, Lo SC, Richards GJ, Frampton MJ, Burn PLet al., 2005, Invited paper: Dendrimers - Efficient solution-processed phosphorescent OLED materials, Pages: 1862-1865, ISSN: 0097-966X

Three aspects of recent dendrimer research are reported. It is shown that highly efficient sky blue phosphorescent devices can be made (external efficiency 10.4%, 11 lm/W at 100 Cd/m2), that blending dendrimers provides a simple way of colour tuning, and finally that luminescence quenching by exciton-exciton annihilation in dendrimer films is weak and can be controlled by the dendrimer generation. These results suggest that dendrimers are very attractive solution processible materials for OLEDs. © 2005 SID.

Conference paper

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