Imperial College London


Faculty of Natural SciencesDepartment of Physics

Visiting Professor



+44 (0)20 7594 6669thomas.anthopoulos Website




Mrs Carolyn Dale +44 (0)20 7594 7579




1111Blackett LaboratorySouth Kensington Campus






BibTex format

author = {Costa, JC and Pouryazdan, A and Panidi, J and Anthopoulos, T and Liedke, MO and Schneider, C and Wagner, A and Munzenrieder, N},
doi = {10.1109/ESSDERC.2018.8486889},
pages = {98--101},
title = {Low temperature and radiation stability of flexible IGZO TFTs and their suitability for space applications},
url = {},
year = {2018}

RIS format (EndNote, RefMan)

AB - © 2018 IEEE. In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 12 e - /cm 2 and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cm 2 V -1 s -1 . Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cm 2 V -1 s -1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.
AU - Costa,JC
AU - Pouryazdan,A
AU - Panidi,J
AU - Anthopoulos,T
AU - Liedke,MO
AU - Schneider,C
AU - Wagner,A
AU - Munzenrieder,N
DO - 10.1109/ESSDERC.2018.8486889
EP - 101
PY - 2018///
SN - 1930-8876
SP - 98
TI - Low temperature and radiation stability of flexible IGZO TFTs and their suitability for space applications
UR -
ER -