Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Paterson:2018:10.1038/s41467-018-07424-2,
author = {Paterson, AF and Anthopoulos, TD},
doi = {10.1038/s41467-018-07424-2},
journal = {Nature Communications},
title = {Enabling thin-film transistor technologies and the device metrics that matter},
url = {http://dx.doi.org/10.1038/s41467-018-07424-2},
volume = {9},
year = {2018}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
AU - Paterson,AF
AU - Anthopoulos,TD
DO - 10.1038/s41467-018-07424-2
PY - 2018///
SN - 2041-1723
TI - Enabling thin-film transistor technologies and the device metrics that matter
T2 - Nature Communications
UR - http://dx.doi.org/10.1038/s41467-018-07424-2
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000452633700004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR - http://hdl.handle.net/10044/1/67844
VL - 9
ER -