Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Chaudhry:2019:10.1002/aelm.201800985,
author = {Chaudhry, MU and Wang, N and Tetzner, K and Seitkhan, A and Miao, Y and Sun, Y and Petty, MC and Anthopoulos, TD and Wang, J and Bradley, DDC},
doi = {10.1002/aelm.201800985},
journal = {Advanced Electronic Materials},
title = {Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors},
url = {http://dx.doi.org/10.1002/aelm.201800985},
year = {2019}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Solution-processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light-emitting-diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light-emitting field-effect transistors (LEFETs) has been surprisingly limited, wth only a few low-performance devices reported. The development of hybrid LEFETs consisting of a solution-processed self-organized multiple-quantum-well lead iodide perovskite layer grown onto an electron-transporting In 2 O 3 /ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm 2 V −1 s −1 ) and a large current on/off ratio (>10 6 ), combined with near infrared light emission (λ max = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m −2 ). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart-pixel-format display applications.
AU - Chaudhry,MU
AU - Wang,N
AU - Tetzner,K
AU - Seitkhan,A
AU - Miao,Y
AU - Sun,Y
AU - Petty,MC
AU - Anthopoulos,TD
AU - Wang,J
AU - Bradley,DDC
DO - 10.1002/aelm.201800985
PY - 2019///
TI - Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors
T2 - Advanced Electronic Materials
UR - http://dx.doi.org/10.1002/aelm.201800985
ER -