Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Hodsden:2020:10.1002/adfm.202000325,
author = {Hodsden, T and Thorley, KJ and Panidi, J and Basu, A and Marsh, AV and Dai, H and White, AJP and Wang, C and Mitchell, W and Glöcklhofer, F and Anthopoulos, TD and Heeney, M},
doi = {10.1002/adfm.202000325},
journal = {Advanced Functional Materials},
pages = {1--12},
title = {Core fluorination enhances solubility and ambient stability of an IDTbased ntype semiconductor in transistor devices},
url = {http://dx.doi.org/10.1002/adfm.202000325},
volume = {30},
year = {2020}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - The synthesis of a novel fluorinated ntype small molecule based on an indacenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improvement in solubility, in addition to effectively stabilizing the lowestunoccupied molecular orbital energy (−4.24 eV). Singlecrystal analysis and density functional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electronwithdrawing dicyanomethylene group. Organic thinfilm transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
AU - Hodsden,T
AU - Thorley,KJ
AU - Panidi,J
AU - Basu,A
AU - Marsh,AV
AU - Dai,H
AU - White,AJP
AU - Wang,C
AU - Mitchell,W
AU - Glöcklhofer,F
AU - Anthopoulos,TD
AU - Heeney,M
DO - 10.1002/adfm.202000325
EP - 12
PY - 2020///
SN - 1616-301X
SP - 1
TI - Core fluorination enhances solubility and ambient stability of an IDTbased ntype semiconductor in transistor devices
T2 - Advanced Functional Materials
UR - http://dx.doi.org/10.1002/adfm.202000325
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202000325
UR - http://hdl.handle.net/10044/1/77201
VL - 30
ER -