Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
//

Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
//

Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
//

Location

 

1111Blackett LaboratorySouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Seo:2016:10.1038/am.2015.135,
author = {Seo, J and Nam, S and Kim, H and Anthopoulos, TD and Bradley, DDC and Kim, Y},
doi = {10.1038/am.2015.135},
journal = {NPG Asia Materials},
title = {Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics},
url = {http://dx.doi.org/10.1038/am.2015.135},
volume = {8},
year = {2016}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Organic nonvolatile memory transistors, featuring low-voltage operation (less than or equal to5 V) and high retention characteristics (>10 000 cycles), are demonstrated by introducing high molecular weight poly(vinyl alcohol) (PVA) as a gate insulating layer. PVA polymers with four different molecular weights (9.5–166 kDa) are examined for organic memory devices with poly(3-hexylthiophene) channel layers. All devices show excellent p-type transistor behavior and strong hysteresis in the transfer curves, but the lower molecular weight PVA delivers the higher hole mobility and the wider memory window. This has been attributed to the higher ratio of hydroxyl group dipoles that align in the out-of-plane direction of the PVA layers, as supported by impedance spectroscopy (dielectric constants), polarized Fourier transform-infrared spectroscopy and synchrotron radiation grazing incidence X-ray diffraction measurements. However, outstanding retention characteristics (<4% current variation after 10 000 cycles) have been achieved with the higher molecular weight PVA (166 kDa) rather than the lower molecular weight PVA (9.5 kDa).
AU - Seo,J
AU - Nam,S
AU - Kim,H
AU - Anthopoulos,TD
AU - Bradley,DDC
AU - Kim,Y
DO - 10.1038/am.2015.135
PY - 2016///
SN - 1884-4057
TI - Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics
T2 - NPG Asia Materials
UR - http://dx.doi.org/10.1038/am.2015.135
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000368583000003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR - http://hdl.handle.net/10044/1/29607
VL - 8
ER -