Imperial College London


Faculty of Natural SciencesDepartment of Physics

Visiting Professor



+44 (0)20 7594 6669thomas.anthopoulos Website




Mrs Carolyn Dale +44 (0)20 7594 7579




1111Blackett LaboratorySouth Kensington Campus






BibTex format

author = {Lin, YH and Thomas, SR and Faber, H and Li, R and McLachlan, MA and Patsalas, PA and Anthopoulos, TD},
doi = {10.1002/aelm.201600070},
journal = {Advanced Electronic Materials},
title = {Al-Doped ZnO Transistors Processed from Solution at 120 °C},
url = {},
volume = {2},
year = {2016}

RIS format (EndNote, RefMan)

AB - A simple Al-doping method that is used to significantly enhance the operating characteristics of ZnO thin-film transistors processed from solution at temperatures down to 120 °C is reported. The two-step doping process relies on the dissolution of zinc oxide hydrate in ammonia hydroxide to form an aqueous Zn-ammine complex solution and the subsequent immersion of Al pellets into it at room temperature. The pellets are then removed, and the doped precursor solution is spin-coated onto the substrate followed by thermal annealing in air to form the n-doped ZnO:Al layers. By controlling the immersion time of the Al pellets in the precursor solution, the free electron concentration in ZnO can be tuned. The resulting ZnO:Al layers are shown to be polycrystalline with tuneable electrical properties. ZnO:Al-based transistors processed at 180 °C exhibit enhanced electron mobility when compared to intrinsic ZnO devices with the maximum values exceeding 5 cm2 V−1 s−1. Even when the process temperature is reduced to 120 °C, the ZnO:Al transistors retain their excellent operating characteristics with a maximum electron mobility of 3 cm2 V−1 s−1. This is amongst the highest values reported to date for soluton-deposited ZnO transistors processed at 120 °C in air.
AU - Lin,YH
AU - Thomas,SR
AU - Faber,H
AU - Li,R
AU - McLachlan,MA
AU - Patsalas,PA
AU - Anthopoulos,TD
DO - 10.1002/aelm.201600070
PY - 2016///
SN - 2199-160X
TI - Al-Doped ZnO Transistors Processed from Solution at 120 °C
T2 - Advanced Electronic Materials
UR -
VL - 2
ER -