Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Dellis:10.1039/c7tc00169j,
author = {Dellis, S and Isakov, I and Kalfagiannis, N and Tetzner, K and Anthopoulos, TD and Koutsogeorgis, DC},
doi = {10.1039/c7tc00169j},
journal = {Journal of Materials Chemistry C},
title = {Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors},
url = {http://dx.doi.org/10.1039/c7tc00169j},
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - We report the development of indium oxide (In2O3) transistors via a singlestep laser-induced photochemical conversion process of a sol-gel metal oxideprecursor. Through careful optimization of the laser annealing conditions wedemonstrated successful conversion of the precursor to In2O3 and its subsequentimplementation in n-channel transistors with electron mobility up to 13 cm2/Vs.Importantly, the process does not require thermal annealing making itcompatible with temperature sensitive materials such as plastic. On the otherhand, the spatial conversion/densification of the sol-gel layer eliminatesadditional process steps associated with semiconductor patterning and hencesignificantly reduces fabrication complexity and cost. Our work demonstratesunambiguously that laser-induced photochemical conversion of sol-gel metaloxide precursors can be rapid and compatible with large-area electronicsmanufacturing.
AU - Dellis,S
AU - Isakov,I
AU - Kalfagiannis,N
AU - Tetzner,K
AU - Anthopoulos,TD
AU - Koutsogeorgis,DC
DO - 10.1039/c7tc00169j
SN - 2050-7534
TI - Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors
T2 - Journal of Materials Chemistry C
UR - http://dx.doi.org/10.1039/c7tc00169j
UR - http://arxiv.org/abs/1701.00859v1
ER -