Imperial College London


Faculty of Natural SciencesDepartment of Physics

Visiting Professor



+44 (0)20 7594 6669thomas.anthopoulos Website




Mrs Carolyn Dale +44 (0)20 7594 7579




1111Blackett LaboratorySouth Kensington Campus






BibTex format

author = {Khim, D and Lin, Y-H and Nam, S and Faber, H and Tetzner, K and Li, R and Zhang, Q and Li, J and Zhang, X and Anthopoulos, TD},
doi = {10.1002/adma.201605837},
journal = {Advanced Materials},
title = {Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution},
url = {},
volume = {29},
year = {2017}

RIS format (EndNote, RefMan)

AB - This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li-doped ZnO (In2O3/Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2O3/Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2O3/Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
AU - Khim,D
AU - Lin,Y-H
AU - Nam,S
AU - Faber,H
AU - Tetzner,K
AU - Li,R
AU - Zhang,Q
AU - Li,J
AU - Zhang,X
AU - Anthopoulos,TD
DO - 10.1002/adma.201605837
PY - 2017///
SN - 0935-9648
TI - Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
T2 - Advanced Materials
UR -
UR -
UR -
VL - 29
ER -