Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Fei:2017:10.1021/jacs.7b03099,
author = {Fei, Z and Han, Y and Gann, E and Hodsden, T and Chesman, ASR and McNeill, CR and Anthopoulos, TD and Heeney, MJ},
doi = {10.1021/jacs.7b03099},
journal = {Journal of the American Chemical Society},
pages = {8552--8561},
title = {Alkylated selenophene-based ladder-type monomers via a facileroute for high performance thin-film transistor applications},
url = {http://dx.doi.org/10.1021/jacs.7b03099},
volume = {139},
year = {2017}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - We report the synthesis of two new selenophene-containing ladder-type monomers, cyclopentadiselenophene (CPDS) and indacenodiselenophene (IDSe), via a 2-fold and 4-fold Pd-catalyzed coupling with a 1,1-diborylmethane derivative. Copolymers with benzothiadiazole were prepared in high yield by Suzuki polymerization to afford materials which exhibited excellent solubility in a range of nonchlorinated solvents. The CPDS copolymer exhibited a band gap of just 1.18 eV, which is among the lowest reported for donor–acceptor polymers. Thin-film transistors were fabricated using environmentally benign, nonchlorinated solvents, with the CPDS and IDSe copolymers exhibiting hole mobility up to 0.15 and 6.4 cm2 V–1 s–1, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.
AU - Fei,Z
AU - Han,Y
AU - Gann,E
AU - Hodsden,T
AU - Chesman,ASR
AU - McNeill,CR
AU - Anthopoulos,TD
AU - Heeney,MJ
DO - 10.1021/jacs.7b03099
EP - 8561
PY - 2017///
SN - 1943-2984
SP - 8552
TI - Alkylated selenophene-based ladder-type monomers via a facileroute for high performance thin-film transistor applications
T2 - Journal of the American Chemical Society
UR - http://dx.doi.org/10.1021/jacs.7b03099
UR - http://hdl.handle.net/10044/1/48741
VL - 139
ER -