Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Boufflet:2018:10.1002/aelm.201700375,
author = {Boufflet, P and Bovo, G and Occhi, L and Fei, Z and Han, Y and Anthopoulos, T and Yuan, H and Heeney, MJ},
doi = {10.1002/aelm.201700375},
journal = {Advanced Electronic Materials},
title = {The influence of backbone fluorination on the dielectric constant of conjugated polythiophenes},
url = {http://dx.doi.org/10.1002/aelm.201700375},
volume = {4},
year = {2018}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - The ability to modify or enhance the dielectric constant of semiconducting polymers can prove valuable for a range of optoelectronic and microelectronic applications. In the case of organic photovoltaics, increasing the dielectric constant of the active layer has often been suggested as a method to control charge generation, recombination dynamics, and ultimately, the power conversion efficiencies. In this contribution, the impact that the degree and pattern of fluorination has on the dielectric constant of poly(3-octylthiophene) (P3OT), a more soluble analogue of the widely studied conjugated material poly(3-hexylthiophene), is explored. P3OT and its backbone-fluorinated analogue, F-P3OT, are compared along with a block and alternating copolymer version of these materials. It is found that the dielectric constant of the polymer thin films increases as the degree of backbone fluorination increases, in a trend consistent with density functional theory calculations of the dipole moment.
AU - Boufflet,P
AU - Bovo,G
AU - Occhi,L
AU - Fei,Z
AU - Han,Y
AU - Anthopoulos,T
AU - Yuan,H
AU - Heeney,MJ
DO - 10.1002/aelm.201700375
PY - 2018///
SN - 2199-160X
TI - The influence of backbone fluorination on the dielectric constant of conjugated polythiophenes
T2 - Advanced Electronic Materials
UR - http://dx.doi.org/10.1002/aelm.201700375
UR - http://hdl.handle.net/10044/1/55364
VL - 4
ER -