Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Tetzner:2017:10.1039/c7tc03721j,
author = {Tetzner, K and Lin, Y-H and Regoutz, A and Seitkhan, A and Payne, DJ and Anthopoulos, TD},
doi = {10.1039/c7tc03721j},
journal = {Journal of Materials Chemistry C},
pages = {11724--11732},
title = {Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp},
url = {http://dx.doi.org/10.1039/c7tc03721j},
volume = {5},
year = {2017}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer's surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.
AU - Tetzner,K
AU - Lin,Y-H
AU - Regoutz,A
AU - Seitkhan,A
AU - Payne,DJ
AU - Anthopoulos,TD
DO - 10.1039/c7tc03721j
EP - 11732
PY - 2017///
SN - 2050-7526
SP - 11724
TI - Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp
T2 - Journal of Materials Chemistry C
UR - http://dx.doi.org/10.1039/c7tc03721j
UR - http://hdl.handle.net/10044/1/55002
VL - 5
ER -