Imperial College London


Faculty of Natural SciencesDepartment of Physics

Visiting Professor



+44 (0)20 7594 6669thomas.anthopoulos Website




Mrs Carolyn Dale +44 (0)20 7594 7579




1111Blackett LaboratorySouth Kensington Campus






BibTex format

author = {Ball, JM and Wöbkenberg, PH and Colléaux, F and Smith, J and Bradley, DDC and Anthopoulos, TD},
doi = {10.1117/12.825339},
title = {Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics},
url = {},
year = {2009}

RIS format (EndNote, RefMan)

AB - Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ∼1 μF/cm2 when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm2/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics. © 2009 SPIE.
AU - Ball,JM
AU - Wöbkenberg,PH
AU - Colléaux,F
AU - Smith,J
AU - Bradley,DDC
AU - Anthopoulos,TD
DO - 10.1117/12.825339
PY - 2009///
SN - 0277-786X
TI - Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics
UR -
ER -