Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Anthopoulos:2001:10.1002/1521-396X(200107)186:1<89::AID-PSSA89>3.0.CO;2-3,
author = {Anthopoulos, TD and Shafai, TS},
doi = {10.1002/1521-396X(200107)186:1<89::AID-PSSA89>3.0.CO;2-3},
journal = {Physica Status Solidi (A) Applied Research},
pages = {89--97},
title = {Junction Properties of Nickel Phthalocyanine Thin Sandwich Film Structures Using Dissimilar Electrodes},
url = {http://dx.doi.org/10.1002/1521-396X(200107)186:1<89::AID-PSSA89>3.0.CO;2-3},
volume = {186},
year = {2001}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Multilayer sandwich structures of Au/NiPc/Pb were fabricated in-situ utilising a sequential deposition technique. Electrical measurements were performed on both in-situ and oxygen-doped samples. Under forward bias conditions, at low voltages, Ohmic conduction, and at higher voltages SCLC were identified. However, in the reverse bias, a transition from electrode limited to bulk limited conduction process was evident. Depletion region width as well as the potential barrier height (φb) at the NiPc/Pb interface were calculated from the reverse J-V characteristics yielding values of 183 nm and 1.03 eV, respectively. After exposure to dry air a strong rectifying effect was observed. The latter is suggested to be associated with the change in the work function of NiPc as a result of oxygen adsorption. The potential barrier height for oxygen-doped samples was calculated yielding a value in the range of 0.955-0.96 eV. Hole and trap parameters, for both in-situ and oxygen-doped sample devices were also evaluated. Derived values suggested that trap concentration associated with higher voltage characteristic is significantly higher for the oxygen-doped sample. This type of behaviour is strongly believed to be due to an oxidisation process occurring near the NiPc/Pb interface.
AU - Anthopoulos,TD
AU - Shafai,TS
DO - 10.1002/1521-396X(200107)186:1<89::AID-PSSA89>3.0.CO;2-3
EP - 97
PY - 2001///
SN - 0031-8965
SP - 89
TI - Junction Properties of Nickel Phthalocyanine Thin Sandwich Film Structures Using Dissimilar Electrodes
T2 - Physica Status Solidi (A) Applied Research
UR - http://dx.doi.org/10.1002/1521-396X(200107)186:1<89::AID-PSSA89>3.0.CO;2-3
VL - 186
ER -