Imperial College London


Faculty of Natural SciencesDepartment of Physics

Visiting Professor



+44 (0)20 7594 6669thomas.anthopoulos Website




Mrs Carolyn Dale +44 (0)20 7594 7579




1111Blackett LaboratorySouth Kensington Campus






BibTex format

author = {Ball, J and Wöbkenberg, PH and Colléaux, F and Kooistra, FB and Hummelen, JC and Bradley, DDC and Anthopoulos, TD},
pages = {20--25},
title = {Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors},
year = {2008}

RIS format (EndNote, RefMan)

AB - Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.
AU - Ball,J
AU - Wöbkenberg,PH
AU - Colléaux,F
AU - Kooistra,FB
AU - Hummelen,JC
AU - Bradley,DDC
AU - Anthopoulos,TD
EP - 25
PY - 2008///
SN - 0272-9172
SP - 20
TI - Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors
ER -