Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

312 results found

Twyman NM, Tetzner K, Anthopoulos TD, Payne DJ, Regoutz Aet al., 2019, Rapid photonic curing of solution-processed In2O3 layers on flexible substrates, APPLIED SURFACE SCIENCE, Vol: 479, Pages: 974-979, ISSN: 0169-4332

JOURNAL ARTICLE

Paterson AF, Tsetseris L, Li R, Basu A, Faber H, Emwas A-H, Panidi J, Fei Z, Niazi MR, Anjum DH, Heeney M, Anthopoulos TDet al., 2019, Addition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1., Adv Mater

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

JOURNAL ARTICLE

Georgiadou DG, Lin Y, Lim J, Ratnasingham S, McLachlan MA, Snaith HJ, Anthopoulos TDet al., High Responsivity and Response Speed Single‐Layer Mixed‐Cation Lead Mixed‐Halide Perovskite Photodetectors Based on Nanogap Electrodes Manufactured on Large‐Area Rigid and Flexible Substrates, Advanced Functional Materials, Pages: 1901371-1901371, ISSN: 1616-301X

JOURNAL ARTICLE

Firdaus Y, Le Corre VM, Khan JI, Kan Z, Laquai F, Beaujuge PM, Anthopoulos TDet al., 2019, Key Parameters Requirements for Non-Fullerene-Based Organic Solar Cells with Power Conversion Efficiency >20., Adv Sci (Weinh), Vol: 6, ISSN: 2198-3844

The reported power conversion efficiencies (PCEs) of nonfullerene acceptor (NFA) based organic photovoltaics (OPVs) now exceed 14% and 17% for single-junction and two-terminal tandem cells, respectively. However, increasing the PCE further requires an improved understanding of the factors limiting the device efficiency. Here, the efficiency limits of single-junction and two-terminal tandem NFA-based OPV cells are examined with the aid of a numerical device simulator that takes into account the optical properties of the active material(s), charge recombination effects, and the hole and electron mobilities in the active layer of the device. The simulations reveal that single-junction NFA OPVs can potentially reach PCE values in excess of 18% with mobility values readily achievable in existing material systems. Furthermore, it is found that balanced electron and hole mobilities of >10-3 cm2 V-1 s-1 in combination with low nongeminate recombination rate constants of 10-12 cm3 s-1 could lead to PCE values in excess of 20% and 25% for single-junction and two-terminal tandem OPV cells, respectively. This analysis provides the first tangible description of the practical performance targets and useful design rules for single-junction and tandem OPVs based on NFA materials, emphasizing the need for developing new material systems that combine these desired characteristics.

JOURNAL ARTICLE

Sun G, Shahid M, Fei Z, Xu S, Eisner FD, Anthopoulos TD, Mclachlan MA, Heeney Met al., 2019, Correction: Highly-efficient semi-transparent organic solar cells utilising non-fullerene acceptors with optimised multilayer MoO <inf>3</inf> /Ag/MoO <inf>3</inf> electrodes (Materials Chemistry Frontiers (2019) 3 (450-455) DOI: 10.1039/C8QM00610E), Materials Chemistry Frontiers, Vol: 3

© 2019 the Partner Organisations. The authors regret that the name of Thomas D. Anthopoulos was not spelled correctly in the original manuscript. The corrected name is shown in the author listing above. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

JOURNAL ARTICLE

Paterson AF, Mottram AD, Faber H, Niazi MR, Fei Z, Heeney M, Anthopoulos TDet al., 2019, Impact of the Gate Dielectric on Contact Resistance in High-Mobility Organic Transistors, Advanced Electronic Materials, Vol: 5

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The impact of the gate dielectric on contact resistance in organic thin-film transistors (OTFTs) is investigated using electrical characterization, bias-stress stability measurements, and bandgap density of states (DOS) analysis. Two similar dielectric materials, namely Cytop and poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole-co-tetrafluoroethylene] (Teflon AF2400), are tested in top-gate bottom-contact OTFTs. The contact resistance of Cytop-based OTFTs is found to be greater than that of the AF2400-based devices, even though the metal/OSC interface remains identical in both systems. The Cytop devices are also found to perform worse in bias-stress stability tests which, along with the DOS calculations, suggests that charge trapping at the OSC/dielectric interface is more prevalent with Cytop than AF2400. This increased charge trapping at the Cytop OSC/dielectric interface appears to be associated with the higher contact resistance in Cytop OTFTs. Differences in the molecular structure between Cytop and AF2400 and the large difference in the glass transition temperature of the two polymers may be responsible for the observed difference in the transistor performance. Overall, this study highlights the importance of the gate dielectric material in the quest for better performing OTFTs and integrated circuits.

JOURNAL ARTICLE

Eisner FD, Azzouzi M, Fei Z, Hou X, Anthopoulos TD, Dennis TJS, Heeney M, Nelson Jet al., 2019, Hybridization of Local Exciton and Charge-Transfer States Reduces Nonradiative Voltage Losses in Organic Solar Cells, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 141, Pages: 6362-6374, ISSN: 0002-7863

JOURNAL ARTICLE

He Q, Shahid M, Panidi J, Marsh AV, Huang W, Daboczi M, Kim J-S, Fei Z, Anthopoulos TD, Heeney Met al., A versatile star-shaped organic semiconductor based on benzodithiophene and diketopyrrolopyrrole, Journal of Materials Chemistry C, ISSN: 2050-7526

<p>A novel star-shaped π-conjugated oligomer containing a benzodithiophene core and four diketopyrrolopyrrole arms is reported.</p>

JOURNAL ARTICLE

Chen M, Yengel E, Zhang J, Zhu C, He X, Zhang C, Huang JK, Hedhili MN, Anthopoulos T, Zhang Xet al., 2019, One-step growth of reduced graphene oxide on arbitrary substrates, Carbon, Vol: 144, Pages: 457-463, ISSN: 0008-6223

© 2018 Elsevier Ltd Reduced graphene oxide (rGO) has inherited the outstanding electronic, optical, thermal and mechanical properties of graphene to a large extent, while maintaining sufficient chemically active sites. Therefore, it has attracted a great deal of research attention in the fields of energy storage, electronics, photonics, catalysis, environmental engineering, etc. Currently, the most popular way to prepare rGO is to reduce graphene oxide, which is obtained by modified Hummer methods using tedious treatments in a harsh environment, to rGO flakes. Industrial applications demand advanced preparation methods that can mass produce highly uniform rGO sheets on arbitrary substrates. In this work, a one-step growth process is introduced that utilizes cellulose acetate as a precursor, without any catalysts, to produce uniform ultrathin rGO films on various substrates and free-standing rGO powders. Systematic spectroscopic and microscopic studies on the resulting rGO are performed. Prototypes of electronic and optoelectronic devices, such as field effect transistors (FETs), photodetectors, and humidity sensors, are fabricated and tested, demonstrating the intriguing applications of our rGO materials across a wide range of fields.

JOURNAL ARTICLE

Sun G, Shahid M, Fei Z, Xu S, Eisner FD, Anthopolous TD, McLachlan MA, Heeney Met al., 2019, Highly-efficient semi-transparent organic solar cells utilising non-fullerene acceptors with optimised multilayer MoO3/Ag/MoO3 electrodes, MATERIALS CHEMISTRY FRONTIERS, Vol: 3, Pages: 450-455

JOURNAL ARTICLE

Karuthedath S, Gorenflot J, Firdaus Y, Sit W-Y, Eisner F, Seitkhan A, Ravva MK, Anthopoulos TD, Laquai Fet al., 2019, Charge and Triplet Exciton Generation in Neat PC70BM Films and Hybrid CuSCN:PC70BM Solar Cells, ADVANCED ENERGY MATERIALS, Vol: 9, ISSN: 1614-6832

JOURNAL ARTICLE

Barrit D, Cheng P, Tang MC, Wang K, Dang H, Smilgies DM, Liu S, Anthopoulos TD, Zhao K, Amassian Aet al., 2019, Impact of the Solvation State of Lead Iodide on Its Two-Step Conversion to MAPbI <inf>3</inf> : An In Situ Investigation, Advanced Functional Materials, ISSN: 1616-301X

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Producing high efficiency solar cells without high-temperature processing or use of additives still remains a challenge with the two-step process. Here, the solution processing of MAPbI 3 from PbI 2 films in N,N-dimethylformamide (DMF) is investigated. In-situ grazing incidence wide-angle X-ray scattering (GIWAXS) measurements reveal a sol–gel process involving three PbI 2 -DMF solvate complexes—disordered (P 0 ) and ordered (P 1 , P 2 )—prior to PbI 2 formation. When the appropriate solvated state of PbI 2 is exposed to MAI (methylammonium Iodide), it can lead to rapid and complete room temperature conversion into MAPbI 3 with higher quality films and improved solar cell performance. Complementary in-situ optical reflectance, absorbance, and quartz crystal microbalance with dissipation (QCM-D) measurements show that dry PbI 2 can take up only one third of the MAI taken up by the solvated-crystalline P 2 phase of PbI 2 , requiring additional annealing and yet still underperforming. The perovskite solar cells fabricated from the ordered P 2 precursor show higher power conversion efficiency (PCE) and reproducibility than devices fabricated from other cases. The average PCE of the solar cells is greatly improved from 13.2(±0.53)% (from annealed PbI 2 ) to 15.7(±0.35)% (from P 2 ) reaching up to 16.2%. This work demonstrates the importance of controlling the solvation of PbI 2 as an effective strategy for the growth of high-quality perovskite films and their application in high efficiency and reproducible solar cells.

JOURNAL ARTICLE

Chaudhry MU, Wang N, Tetzner K, Seitkhan A, Miao Y, Sun Y, Petty MC, Anthopoulos TD, Wang J, Bradley DDCet al., 2019, Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors, Advanced Electronic Materials

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Solution-processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light-emitting-diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light-emitting field-effect transistors (LEFETs) has been surprisingly limited, wth only a few low-performance devices reported. The development of hybrid LEFETs consisting of a solution-processed self-organized multiple-quantum-well lead iodide perovskite layer grown onto an electron-transporting In 2 O 3 /ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm 2 V −1 s −1 ) and a large current on/off ratio (>10 6 ), combined with near infrared light emission (λ max = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m −2 ). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart-pixel-format display applications.

JOURNAL ARTICLE

Paterson AF, Anthopoulos TD, 2018, Enabling thin-film transistor technologies and the device metrics that matter, NATURE COMMUNICATIONS, Vol: 9, ISSN: 2041-1723

JOURNAL ARTICLE

Semple J, Georgiadou DG, Wyatt-Moon G, Yoon M, Seitkhan A, Yengel E, Rossbauer S, Bottacchi F, McLachlan MA, Bradley DDC, Anthopoulos TDet al., 2018, Large-area plastic nanogap electronics enabled by adhesion lithography, npj Flexible Electronics, Vol: 2

JOURNAL ARTICLE

Costa JC, Pouryazdan A, Panidi J, Anthopoulos T, Liedke MO, Schneider C, Wagner A, Munzenrieder Net al., 2018, Low temperature and radiation stability of flexible IGZO TFTs and their suitability for space applications, Pages: 98-101, ISSN: 1930-8876

© 2018 IEEE. In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 12 e - /cm 2 and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cm 2 V -1 s -1 . Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cm 2 V -1 s -1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.

CONFERENCE PAPER

Boufflet P, Bovo G, Occhi L, Yuan H-K, Fei Z, Han Y, Anthopoulos TD, Stavrinou PN, Heeney Met al., 2018, The Influence of Backbone Fluorination on the Dielectric Constant of Conjugated Polythiophenes, ADVANCED ELECTRONIC MATERIALS, Vol: 4, ISSN: 2199-160X

JOURNAL ARTICLE

Paterson AF, Lin Y-H, Mottram AD, Fei Z, Niazi MR, Kirmani AR, Amassian A, Solomeshch O, Tessler N, Heeney M, Anthopoulos TDet al., 2018, The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors, ADVANCED ELECTRONIC MATERIALS, Vol: 4, ISSN: 2199-160X

JOURNAL ARTICLE

Xu Y, Ji D, Song H, Zhang N, Hu Y, Anthopoulos TD, Di Fabrizio EM, Xiao S, Gan Qet al., 2018, Light-Matter Interaction within Extreme Dimensions: From Nanomanufacturing to Applications, ADVANCED OPTICAL MATERIALS, Vol: 6, ISSN: 2195-1071

JOURNAL ARTICLE

Wyatt-Moon G, Georgiadou DG, Zoladek-Lemanczyk A, Castro FA, Anthopoulos TDet al., 2018, Flexible nanogap polymer light-emitting diodes fabricated via adhesion lithography (a-Lith), Journal of Physics: Materials, Vol: 1, Pages: 01LT01-01LT01

JOURNAL ARTICLE

Paterson AF, Singh S, Fallon KJ, Hodsden T, Han Y, Schroeder BC, Bronstein H, Heeney M, McCulloch I, Anthopoulos TDet al., 2018, Recent Progress in High-Mobility Organic Transistors: A Reality Check, ADVANCED MATERIALS, Vol: 30, ISSN: 0935-9648

JOURNAL ARTICLE

Wahyudi W, Cao Z, Kumar P, Li M, Wu Y, Hedhili MN, Anthopoulos TD, Cavallo L, Li L-J, Ming Jet al., 2018, Phase Inversion Strategy to Flexible Freestanding Electrode: Critical Coupling of Binders and Electrolytes for High Performance Li-S Battery, ADVANCED FUNCTIONAL MATERIALS, Vol: 28, ISSN: 1616-301X

JOURNAL ARTICLE

Creamer A, Wood CS, Howes PD, Casey A, Cong S, Marsh AV, Godin R, Panidi J, Anthopoulos TD, Burgess CH, Wu T, Fei Z, Hamilton I, McLachlan MA, Stevens MM, Heeney Met al., 2018, Post-polymerisation functionalisation of conjugated polymer backbones and its application in multifunctional emissive nanoparticles, NATURE COMMUNICATIONS, Vol: 9, ISSN: 2041-1723

JOURNAL ARTICLE

Wijeyasinghe N, Eisner F, Tsetseris L, Lin Y-H, Seitkhan A, Li J, Yan F, Solomeshch O, Tessler N, Patsalas P, Anthopoulos TDet al., 2018, p-Doping of Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers for High-Performance Transistors and Organic Solar Cells, ADVANCED FUNCTIONAL MATERIALS, Vol: 28, ISSN: 1616-301X

JOURNAL ARTICLE

Firdaus Y, Seitkhan A, Eisner F, Sit W-Y, Kan Z, Wehbe N, Balawi AH, Yengel E, Karuthedath S, Laquai F, Anthopoulos TDet al., 2018, Charge Photogeneration and Recombination in Mesostructured CuSCN-Nanowire/PC70BM Solar Cells, SOLAR RRL, Vol: 2, ISSN: 2367-198X

JOURNAL ARTICLE

Eisner F, Seitkhan A, Han Y, Khim D, Yengel E, Kirmani AR, Xu J, de Arquer FPG, Sargent EH, Amassian A, Fei Z, Heeney M, Anthopoulos TDet al., 2018, Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells, SOLAR RRL, Vol: 2, ISSN: 2367-198X

JOURNAL ARTICLE

Choi HH, Rodionov YI, Paterson AF, Panidi J, Saranin D, Kharlamov N, Didenko SI, Anthopoulos TD, Cho K, Podzorov Vet al., 2018, Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 28, ISSN: 1616-301X

JOURNAL ARTICLE

Chaudhry MU, Tetzner K, Lin Y-H, Nam S, Pearson C, Groves C, Petty MC, Anthopoulos TD, Bradley DDCet al., 2018, Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors, ACS APPLIED MATERIALS & INTERFACES, Vol: 10, Pages: 18445-18449, ISSN: 1944-8244

JOURNAL ARTICLE

Mottram AD, Pattanasattayavong P, Isakov I, Wyatt-Moon G, Faber H, Lin Y-H, Anthopoulos TDet al., 2018, Electron mobility enhancement in solution-processed low-voltage In2O3 transistorsvia channel interface planarization, AIP ADVANCES, Vol: 8, ISSN: 2158-3226

JOURNAL ARTICLE

Squeo BM, Gregoriou VG, Han Y, Palma-Cando A, Allard S, Serpetzoglou E, Konidakis I, Stratakis E, Avgeropoulos A, Anthopoulos TD, Heeney M, Scherf U, Chochos CLet al., 2018, alpha,beta-Unsubstituted meso-positioning thienyl BODIPY: a promising electron deficient building block for the development of near infrared (NIR) p-type donor-acceptor (D-A) conjugated polymers, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 6, Pages: 4030-4040, ISSN: 2050-7526

JOURNAL ARTICLE

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