Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

279 results found

Chaudhry MU, Tetzner K, Lin Y-H, Nam S, Pearson C, Groves C, Petty MC, Anthopoulos TD, Bradley DDCet al., 2018, Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors., ACS Appl Mater Interfaces

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

JOURNAL ARTICLE

Choi HH, Rodionov YI, Paterson AF, Panidi J, Saranin D, Kharlamov N, Didenko SI, Anthopoulos TD, Cho K, Podzorov Vet al., 2018, Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors, Advanced Functional Materials, ISSN: 1616-301X

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

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Fei Z, Eisner FD, Jiao X, Azzouzi M, Rohr JA, Han Y, Shahid M, Chesman ASR, Easton CD, McNeill CR, Anthopoulos TD, Nelson J, Heeney Met al., 2018, An Alkylated Indacenodithieno[3,2-b]thiophene-Based Nonfullerene Acceptor with High Crystallinity Exhibiting Single Junction Solar Cell Efficiencies Greater than 13% with Low Voltage Losses, ADVANCED MATERIALS, Vol: 30, ISSN: 0935-9648

JOURNAL ARTICLE

Fei Z, Eisner FD, Jiao X, Azzouzi M, Rohr JA, Han Y, Shahid M, Chesman ASR, Easton CD, McNeill CR, Anthopoulos TD, Nelson J, Heeney Met al., 2018, An Alkylated Indacenodithieno[3,2-b] thiophene-Based Nonfullerene Acceptor with High Crystallinity Exhibiting Single Junction Solar Cell Efficiencies Greater than 13% with Low Voltage Losses (vol 30, 2018), ADVANCED MATERIALS, Vol: 30, ISSN: 0935-9648

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Huang W, Lin Y-H, Anthopoulos TD, 2018, High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative, ACS APPLIED MATERIALS & INTERFACES, Vol: 10, Pages: 10202-10210, ISSN: 1944-8244

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Lu R, Han Y, Zhang W, Zhu X, Fei Z, Hodsden T, Anthopoulos TD, Heeney Met al., 2018, Alkylated indacenodithieno[3,2-b]thiophene-based all donor ladder-type conjugated polymers for organic thin film transistors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 6, Pages: 2004-2009, ISSN: 2050-7526

JOURNAL ARTICLE

Nam S, Hahm SG, Khim D, Kim H, Sajoto T, Ree M, Marder SR, Anthopoulos TD, Bradley DDC, Kim Yet al., 2018, Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors, ACS APPLIED MATERIALS & INTERFACES, Vol: 10, Pages: 12921-12929, ISSN: 1944-8244

JOURNAL ARTICLE

Panidi J, Paterson AF, Khim D, Fei Z, Han Y, Tsetseris L, Vourlias G, Patsalas PA, Heeney M, Anthopoulos TDet al., 2018, Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)(3), ADVANCED SCIENCE, Vol: 5, ISSN: 2198-3844

JOURNAL ARTICLE

Sit W-Y, Eisner FD, Lin Y-H, Firdaus Y, Seitkhan A, Balawi AH, Laquai F, Burgess CH, McLachlan MA, Volonakis G, Giustino F, Anthopoulos TDet al., 2018, High-Efficiency Fullerene Solar Cells Enabled by a Spontaneously Formed Mesostructured CuSCN-Nanowire Heterointerface, ADVANCED SCIENCE, Vol: 5, ISSN: 2198-3844

JOURNAL ARTICLE

Squeo BM, Gregoriou VG, Han Y, Palma-Cando A, Allard S, Serpetzoglou E, Konidakis I, Stratakis E, Avgeropoulos A, Anthopoulos TD, Heeney M, Scherf U, Chochos CLet al., 2018, alpha,beta-Unsubstituted meso-positioning thienyl BODIPY: a promising electron deficient building block for the development of near infrared (NIR) p-type donor-acceptor (D-A) conjugated polymers, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 6, Pages: 4030-4040, ISSN: 2050-7526

JOURNAL ARTICLE

Wijeyasinghe N, Tsetseris L, Regoutz A, Sit W-Y, Fei Z, Du T, Wang X, McLachlan MA, Vourlias G, Patsalas PA, Payne DJ, Heeney M, Anthopoulos TDet al., 2018, Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes, ADVANCED FUNCTIONAL MATERIALS, Vol: 28, ISSN: 1616-301X

JOURNAL ARTICLE

Boufflet P, Bovo G, Occhi L, Yuan HK, Fei Z, Han Y, Anthopoulos TD, Stavrinou PN, Heeney Met al., 2017, The Influence of Backbone Fluorination on the Dielectric Constant of Conjugated Polythiophenes, Advanced Electronic Materials

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. The ability to modify or enhance the dielectric constant of semiconducting polymers can prove valuable for a range of optoelectronic and microelectronic applications. In the case of organic photovoltaics, increasing the dielectric constant of the active layer has often been suggested as a method to control charge generation, recombination dynamics, and ultimately, the power conversion efficiencies. In this contribution, the impact that the degree and pattern of fluorination has on the dielectric constant of poly(3-octylthiophene) (P3OT), a more soluble analogue of the widely studied conjugated material poly(3-hexylthiophene), is explored. P3OT and its backbone-fluorinated analogue, F-P3OT, are compared along with a block and alternating copolymer version of these materials. It is found that the dielectric constant of the polymer thin films increases as the degree of backbone fluorination increases, in a trend consistent with density functional theory calculations of the dipole moment.

JOURNAL ARTICLE

Casey A, Green JP, Tuladhar PS, Kirkus M, Han Y, Anthopoulos TD, Heeney Met al., 2017, Cyano substituted benzotriazole based polymers for use in organic solar cells, JOURNAL OF MATERIALS CHEMISTRY A, Vol: 5, Pages: 6465-6470, ISSN: 2050-7488

JOURNAL ARTICLE

Dellis S, Isakov I, Kalfagiannis N, Tetzner K, Anthopoulos TD, Koutsogeorgis DCet al., 2017, Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 5, Pages: 3673-3677, ISSN: 2050-7526

JOURNAL ARTICLE

Faber H, Das S, Lin Y-H, Pliatsikas N, Zhao K, Kehagias T, Dimitrakopulos G, Amassian A, Patsalas PA, Anthopoulos TDet al., 2017, Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution, SCIENCE ADVANCES, Vol: 3, ISSN: 2375-2548

JOURNAL ARTICLE

Fallon KJ, Santala A, Wijeyasinghe N, Manley EF, Goodeal N, Leventis A, Freeman DME, Al-Hashimi M, Chen LX, Marks TJ, Anthopoulos TD, Bronstein Het al., 2017, Effect of Alkyl Chain Branching Point on 3D Crystallinity in High N-Type Mobility Indolonaphthyridine Polymers, ADVANCED FUNCTIONAL MATERIALS, Vol: 27, ISSN: 1616-301X

JOURNAL ARTICLE

Fei Z, Chen L, Han Y, Gann E, Chesman ASR, McNeill CR, Anthopoulos TD, Heeney M, Pietrangelo Aet al., 2017, Alternating 5,5-Dimethylcyclopentadiene and Diketopyrrolopyrrole Copolymer Prepared at Room Temperature for High Performance Organic Thin-Film Transistors, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 139, Pages: 8094-8097, ISSN: 0002-7863

JOURNAL ARTICLE

Fei Z, Han Y, Gann E, Hodsden T, Chesman ASR, McNeill CR, Anthopoulos TD, Heeney Met al., 2017, Alkylated Selenophene-Based Ladder-Type Monomers via a Facile Route for High-Performance Thin-Film Transistor Applications, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 139, Pages: 8552-8561, ISSN: 0002-7863

JOURNAL ARTICLE

Isakov I, Faber H, Grell M, Wyatt-Moon G, Pliatsikas N, Kehagias T, Dimitrakopulos GP, Patsalas PP, Li R, Anthopoulos TDet al., 2017, Exploring the Leidenfrost Effect for the Deposition of High-Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 27, ISSN: 1616-301X

JOURNAL ARTICLE

Khim D, Lin Y-H, Nam S, Faber H, Tetzner K, Li R, Zhang Q, Li J, Zhang X, Anthopoulos TDet al., 2017, Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution, ADVANCED MATERIALS, Vol: 29, ISSN: 0935-9648

JOURNAL ARTICLE

Lin Y-H, Pattanasattayavong P, Anthopoulos TD, 2017, Metal-Halide Perovskite Transistors for Printed Electronics: Challenges and Opportunities, ADVANCED MATERIALS, Vol: 29, ISSN: 0935-9648

JOURNAL ARTICLE

Noh Y-Y, Guo X, Hussain MM, Ma ZJ, Akinwande D, Caironi M, Anthopoulos TD, Tse NTN, Ishihara Ret al., 2017, SPECIAL ISSUE ON FLEXIBLE ELECTRONICS Foreword, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 64, Pages: 1878-1880, ISSN: 0018-9383

JOURNAL ARTICLE

Pattanasattayavong P, Promarak V, Anthopoulos TD, 2017, Electronic Properties of Copper(I) Thiocyanate (CuSCN), ADVANCED ELECTRONIC MATERIALS, Vol: 3, ISSN: 2199-160X

JOURNAL ARTICLE

Pattanasattayavong P, Promarak V, Anthopoulos TD, 2017, Electronic Properties of Copper(I) Thiocyanate (CuSCN) (vol 3, 1600378, 2017), ADVANCED ELECTRONIC MATERIALS, Vol: 3, ISSN: 2199-160X

JOURNAL ARTICLE

Petti L, Pattanasattayavong P, Lin Y-H, Munzenrieder N, Cantarella G, Yaacobi-Gross N, Yan F, Troster G, Anthopoulos TDet al., 2017, Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits, APPLIED PHYSICS LETTERS, Vol: 110, ISSN: 0003-6951

JOURNAL ARTICLE

Semple J, Georgiadou DG, Wyatt-Moon G, Gelinck G, Anthopoulos TDet al., 2017, Flexible diodes for radio frequency (RF) electronics: a materials perspective, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 32, ISSN: 0268-1242

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Semple J, Wyatt-Moon G, Georgiadou DG, McLachlan MA, Anthopoulos TDet al., 2017, Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 64, Pages: 1973-1980, ISSN: 0018-9383

JOURNAL ARTICLE

Tetzner K, Isakov I, Regoutz A, Payne DJ, Anthopoulos TDet al., 2017, The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 5, Pages: 59-64, ISSN: 2050-7526

JOURNAL ARTICLE

Tetzner K, Lin Y-H, Regoutz A, Seitkhan A, Payne DJ, Anthopoulos TDet al., 2017, Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 5, Pages: 11724-11732, ISSN: 2050-7526

JOURNAL ARTICLE

Wijeyasinghe N, Regoutz A, Eisner F, Du T, Tsetseris L, Lin Y-H, Faber H, Pattanasattayavong P, Li J, Yan F, McLachlan MA, Payne DJ, Heeney M, Anthopoulos TDet al., 2017, Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells, ADVANCED FUNCTIONAL MATERIALS, Vol: 27, ISSN: 1616-301X

JOURNAL ARTICLE

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