Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

416 results found

Sakai N, Warren R, Zhang F, Nayak S, Liu J, Kesava SV, Lin Y-H, Biswal HS, Lin X, Grovenor C, Malinauskas T, Basu A, Anthopoulos TD, Getautis V, Kahn A, Riede M, Nayak PK, Snaith HJet al., 2021, Adduct-based p-doping of organic semiconductors., Nat Mater, ISSN: 1476-1122

Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and low-cost dopants if a widespread transition towards larger-area organic electronic devices is to occur. Here we report dimethyl sulfoxide adducts as p-dopants that fulfil these conditions for a range of organic semiconductors. These adduct-based dopants are compatible with both solution and vapour-phase processing. We explore the doping mechanism and use the knowledge we gain to 'decouple' the dopants from the choice of counterion. We demonstrate that asymmetric p-doping is possible using solution processing routes, and demonstrate its use in metal halide perovskite solar cells, organic thin-film transistors and organic light-emitting diodes, which showcases the versatility of this doping approach.

Journal article

Wahyudi W, Ladelta V, Tsetseris L, Alsabban MM, Guo X, Yengel E, Faber H, Adilbekova B, Seitkhan A, Emwas A-H, Hedhili MN, Li L-J, Tung V, Hadjichristidis N, Anthopoulos TD, Ming Jet al., 2021, Lithium-Ion Desolvation Induced by Nitrate Additives Reveals New Insights into High Performance Lithium Batteries, ADVANCED FUNCTIONAL MATERIALS, ISSN: 1616-301X

Journal article

Fallon KJ, Wijeyasinghe N, Leventis A, Marin-Beloqui JM, Toolan DTW, Al-Hashimi M, Clarke TM, Anthopoulos TD, Bronstein Het al., 2021, Tyrian purple: an ancient natural dye for cross-conjugated n-type charge transport, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 4200-4205, ISSN: 2050-7526

Journal article

Kim H, Nugraha M, Guan X, Wang Z, Hota MK, Xu X, Wu T, Baran D, Anthopoulos TD, Alshareef HNet al., 2021, All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts, ACS NANO, Vol: 15, Pages: 5221-5229, ISSN: 1936-0851

Journal article

Paterson AF, Li R, Markina A, Tsetseris L, MacPhee S, Faber H, Emwas A-H, Panidi J, Bristow H, Wadsworth A, Baran D, Andrienko D, Heeney M, McCulloch I, Anthopoulos TDet al., 2021, N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR dagger, JOURNAL OF MATERIALS CHEMISTRY C, ISSN: 2050-7526

Journal article

Heeney M, Kafourou P, Park B, Luke J, Luxi T, Panidi J, Glöcklhofer F, Kim J, Anthopoulos TD, Kim J-S, Lee K, Kwon Set al., 2021, One-step six-fold cyanation of benzothiadiazole acceptor Units for air-stable high-performance n-type organic field-effect transistors, Angewandte Chemie International Edition, Vol: 60, Pages: 5970-5977, ISSN: 1433-7851

We report a new high electron affinity acceptor end group for organic semiconductors, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT). An n-type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a six-fold nucleophilic substitution with cyanides on a fluorinated precursor, itself prepared by a direct arylation approach. This one-step chemical modification was found to significantly impact the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n-type semiconductor. The highly electron-deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n-type organic field-effect transistors (OFETs). Solution-processed OFETs based on TCNBT IDT exhibited a charge carrier mobility of up to µ e ≈ 0.15 cm 2 V -1 s -1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.

Journal article

Kafourou P, Park B, Luke J, Tan L, Panidi J, Glöcklhofer F, Kim J, Anthopoulos TD, Kim J, Lee K, Kwon S, Heeney Met al., 2021, One‐step sixfold cyanation of benzothiadiazole acceptor units for air‐stable high‐performance n‐type organic field‐effect transistors, Angewandte Chemie, Vol: 133, Pages: 6035-6042, ISSN: 0044-8249

Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT). An n‐type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with cyanide on a fluorinated precursor, itself prepared by a direct arylation approach. This one‐step chemical modification significantly impacted the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n‐type semiconductor. The electron‐deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n‐type organic field‐effect transistors (OFETs). Solution‐processed OFETs based on TCNBT IDT exhibited a charge‐carrier mobility of up to μe≈0.15 cm2 V−1 s−1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.

Journal article

Hodsden T, Thorley KJ, Basu A, White AJP, Wang C, Mitchell W, Glocklhofer F, Anthopoulos TD, Heeney Met al., 2021, The influence of alkyl group regiochemistry and backbone fluorination on the packing and transistor performance of N-cyanoimine functionalised indacenodithiophenes, Materials Advances, Vol: 2, Pages: 1706-1714

The synthesis of two novel n-type molecular organic semiconductors based on a fluorinated indacenodithiophene core in combination with an electron withdrawing N-cyanoimine group is reported, and the influence of the regiochemistry of the solubilizing sidechain is investigated. The N-cyanoimine is confirmed to be a strongly electron accepting group, which in combination with the core fluorination resulted in high electron affinities for both materials. Single crystal analysis demonstrated that whilst both materials arrange in ordered slipped stacks with close π–π stacking distances (∼3.40 Å), significant differences in electron transfer integrals for the two regioisomers were observed, relating to differences in relative molecular displacement along the π-stacking direction. Organic thin-film transistors fabricated via blade-coating displayed electron mobility up to 0.13 cm2 V−1 s−1 for the isomer with the larger transfer integral.

Journal article

Wang B, Scaccabarozzi AD, Wang H, Koizumi M, Nugraha MI, Lin Y, Firdaus Y, Wang Y, Lee S, Yokota T, Anthopoulos TD, Someya Tet al., 2021, Molecular doping of near-infrared organic photodetectors for photoplethysmogram sensors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 3129-3135, ISSN: 2050-7526

Journal article

Tang M-C, Dang HX, Lee S, Barrit D, Munir R, Wang K, Li R, Smilgies D-M, De Wolf S, Kim D-Y, Anthopoulos TD, Amassian Aet al., 2021, Wide and Tunable Bandgap MAPbBr(3-x)Cl(x) Hybrid Perovskites with Enhanced Phase Stability: In Situ Investigation and Photovoltaic Devices, SOLAR RRL, ISSN: 2367-198X

Journal article

Isikgor FH, Subbiah AS, Eswaran MK, Howells CT, Babayigit A, De Bastiani M, Yengel E, Liu J, Furlan F, Harrison GT, Zhumagali S, Khan J, Laquai F, Anthopoulos TD, McCulloch I, Schwingenschloegl U, De Wolf Set al., 2021, Scaling-up perovskite solar cells on hydrophobic surfaces, NANO ENERGY, Vol: 81, ISSN: 2211-2855

Journal article

Tang M-C, Zhang S, Magnanelli TJ, Nguyen NV, Heilweil EJ, Anthopoulos TD, Hacker CAet al., 2021, Unraveling the compositional heterogeneity and carrier dynamics of alkali cation doped 3D/2D perovskites with improved stability, MATERIALS ADVANCES, Vol: 2

Journal article

Maria IP, Paulsen BD, Savva A, Ohayon D, Wu R, Hallani R, Basu A, Du W, Anthopoulos TD, Inal S, Rivnay J, McCulloch I, Giovannitti Aet al., 2021, The Effect of Alkyl Spacers on the Mixed Ionic-Electronic Conduction Properties of N-Type Polymers, ADVANCED FUNCTIONAL MATERIALS, Vol: 31, ISSN: 1616-301X

Journal article

Li Q, Cao Z, Wahyudi W, Liu G, Park G-T, Cavallo L, Anthopoulos TD, Wang L, Sun Y-K, Alshareef HN, Ming Jet al., 2021, Unraveling the New Role of an Ethylene Carbonate Solvation Shell in Rechargeable Metal Ion Batteries, ACS ENERGY LETTERS, Vol: 6, Pages: 69-78, ISSN: 2380-8195

Journal article

Liu J, Ye G, Potgieser HGO, Koopmans M, Sami S, Nugraha MI, Villalva DR, Sun H, Dong J, Yang X, Qiu X, Yao C, Portale G, Fabiano S, Anthopoulos TD, Baran D, Havenith RWA, Chiechi RC, Koster LJAet al., 2021, Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectrics, ADVANCED MATERIALS, Vol: 33, ISSN: 0935-9648

Journal article

Abdullah I, Emyr Macdonald J, Lin Y-H, Anthopoulos TD, Salahr NH, Anwar Kakil S, Muhammadsharif FFet al., 2021, Bias stability of solution-processed In2O3 thin film transistors, JOURNAL OF PHYSICS-MATERIALS, Vol: 4

Journal article

Gedda M, Yengel E, Faber H, Paulus F, Kress JA, Tang M-C, Zhang S, Hacker CA, Kumar P, Naphade DR, Vaynzof Y, Volonakis G, Giustino F, Anthopoulos TDet al., 2020, Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors, ADVANCED MATERIALS, Vol: 33, ISSN: 0935-9648

Journal article

Firdaus Y, Ho CHY, Lin Y, Yengel E, Le Corre VM, Nugraha M, Yarali E, So F, Anthopoulos TDet al., 2020, Efficient Double- and Triple-Junction Nonfullerene Organic Photovoltaics and Design Guidelines for Optimal Cell Performance, ACS ENERGY LETTERS, Vol: 5, Pages: 3692-3701, ISSN: 2380-8195

Journal article

Lin Y, Nugraha MI, Firdaus Y, Scaccabarozzi AD, Anies F, Emwas A-H, Yengel E, Zheng X, Liu J, Wahyudi W, Yarali E, Faber H, Bakr OM, Tsetseris L, Heeney M, Anthopoulos TDet al., 2020, A Simple n-Dopant Derived from Diquat Boosts the Efficiency of Organic Solar Cells to 18.3%, ACS ENERGY LETTERS, Vol: 5, Pages: 3663-3671, ISSN: 2380-8195

Journal article

Fan Q, An Q, Lin Y, Xia Y, Li Q, Zhang M, Su W, Peng W, Zhang C, Liu F, Hou L, Zhu W, Yu D, Xiao M, Moons E, Zhang F, Anthopoulos TD, Inganas O, Wang Eet al., 2020, Over 14% efficiency all-polymer solar cells enabled by a low bandgap polymer acceptor with low energy loss and efficient charge separation, ENERGY & ENVIRONMENTAL SCIENCE, Vol: 13, Pages: 5017-5027, ISSN: 1754-5692

Journal article

Basu A, Niazi MR, Scaccabarozzi AD, Faber H, Fei Z, Anjum DH, Paterson AF, Boltalina O, Heeney M, Anthopoulos TDet al., 2020, Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 8, Pages: 15368-15376, ISSN: 2050-7526

Journal article

Barrit D, Zhang Y, Yang T, Tang M-C, Li R, Smilgies D-M, Frank Liu S, Anthopoulos TD, Amassian A, Zhao Ket al., 2020, Sequential Formation of Tunable-Bandgap Mixed-Halide Lead-Based Perovskites: In Situ Investigation and Photovoltaic Devices, SOLAR RRL, Vol: 5, ISSN: 2367-198X

Journal article

Liu J, van der Zee B, Alessandri R, Sami S, Dong J, Nugraha MI, Barker AJ, Rousseva S, Qiu L, Qiu X, Klasen N, Chiechi RC, Baran D, Caironi M, Anthopoulos TD, Portale G, Havenith RWA, Marrink SJ, Hummelen JC, Koster LJAet al., 2020, N-type organic thermoelectrics: demonstration of ZT > 0.3, NATURE COMMUNICATIONS, Vol: 11, ISSN: 2041-1723

Journal article

Bristow H, Jacoutot P, Scaccabarozzi AD, Babics M, Moser M, Wadsworth A, Anthopoulos TD, Bakulin A, McCulloch I, Gasparini Net al., 2020, Nonfullerene-Based Organic Photodetectors for Ultrahigh Sensitivity Visible Light Detection, ACS APPLIED MATERIALS & INTERFACES, Vol: 12, Pages: 48836-48844, ISSN: 1944-8244

Journal article

Portilla L, Zhao J, Wang Y, Sun L, Li F, Robin M, Wei M, Cui Z, Occhipinti LG, Anthopoulos TD, Pecunia Vet al., 2020, Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics, ACS NANO, Vol: 14, Pages: 14036-14046, ISSN: 1936-0851

Journal article

Karuthedath S, Gorenflot J, Firdaus Y, Chaturvedi N, De Castro CSP, Harrison GT, Khan JI, Markina A, Balawi AH, Pena TAD, Liu W, Liang R-Z, Sharma A, Paleti SHK, Zhang W, Lin Y, Alarousu E, Anjum DH, Beaujuge PM, De Wolf S, McCulloch I, Anthopoulos TD, Baran D, Andrienko D, Laquai Fet al., 2020, Intrinsic efficiency limits in low-bandgap non-fullerene acceptor organic solar cells, NATURE MATERIALS, Vol: 20, Pages: 378-+, ISSN: 1476-1122

Journal article

Georgiadou DG, Semple J, Sagade AA, Forsten H, Rantakari P, Lin Y-H, Alkhalil F, Seitkhan A, Loganathan K, Faber H, Anthopoulos TDet al., 2020, 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale, NATURE ELECTRONICS, Vol: 3, Pages: 718-725, ISSN: 2520-1131

Journal article

Firdaus Y, Le Corre VM, Karuthedath S, Liu W, Markina A, Huang W, Chattopadhyay S, Nahid MM, Nugraha MI, Lin Y, Seitkhan A, Basu A, Zhang W, McCulloch I, Ade H, Labram J, Laquai F, Andrienko D, Koster LJA, Anthopoulos TDet al., 2020, Long-range exciton diffusion in molecular non-fullerene acceptors, NATURE COMMUNICATIONS, Vol: 11, ISSN: 2041-1723

Journal article

Kakavelakis G, Gedda M, Panagiotopoulos A, Kymakis E, Anthopoulos TD, Petridis Ket al., 2020, Metal Halide Perovskites for High-Energy Radiation Detection, ADVANCED SCIENCE, Vol: 7

Journal article

Isakov I, Faber H, Mottram AD, Das S, Grell M, Regoutz A, Kilmurray R, McLachlan MA, Payne DJ, Anthopoulos TDet al., 2020, Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In(2)O(3)Transistors, ADVANCED ELECTRONIC MATERIALS, Vol: 6, ISSN: 2199-160X

Journal article

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