350 results found
Wadsworth A, Chen H, Thorley KJ, et al., 2020, Modification of Indacenodithiophene-Based Polymers and Its Impact on Charge Carrier Mobility in Organic Thin-Film Transistors., J Am Chem Soc
The polymer indacenodithiophene-co-benzothiadiazole (IDT-BT) has been thoroughly studied for its use in p-type organic thin-film transistors over the course of the past decade. While a variety of modifications have been made to its structure, few analogues have been able to match or surpass the hole mobility that can be obtained by IDT-BT. Here, we discuss the rationale behind the chemical modifications that have been utilized and suggest design principles toward high-mobility indacenodithiophene-based polymers. It is clear that planarizing intramolecular interactions, which exist between the peripheral thiophene of the IDT unit and the benzothiadiazole, are imperative for achieving high hole mobilities in this relatively amorphous polymer. Moreover, despite the less ordered backbones of the extended fused-ring cores that have recently been utilized (TIF-BT and TBIDT-BT), high mobilities were still attained in these polymers owing to additional interchain charge transfer. Thus, maintaining the beneficial thiophene-benzothiadiazole intramolecular interactions, while further extending the IDT core to promote interchain charge transfer, is a logical strategy toward high-mobility p-type polymers.
Hallani RK, Moser M, Bristow H, et al., 2020, Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates., J Org Chem, Vol: 85, Pages: 277-283
The synthesis of a new benzocyclobutene based polymer, PSBBB, designed as a dielectric material for use in organic thin film transistors was reported. Compared to conventional benzocyclobutene-based materials, the introduction of a butoxide substituent at the 7-position of the benzocyclobutene pendant unit on the polymer allowed PSBBB to be cross-linked at temperatures of 120 °C, thus rendering it compatible with the processing requirements of flexible plastic substrates. The cross-linking behavior of PSBBB was investigated by Fourier transform infrared spectroscopy and differential scanning calorimetry, demonstrating cross-linking of the polymer after curing at 120 °C. Bottom-gate bottom-contact organic thin film transistors were fabricated using PSBBB as dielectric, affording a performance comparable to that of other dielectric polymeric materials.
Troughton J, Neophytou M, Gasparini N, et al., A universal solution processed interfacial bilayer enabling ohmic contact in organic and hybrid optoelectronic devices, Energy & Environmental Science, ISSN: 1754-5692
<p>A bilayer of Nb-TiO<sub>2</sub> and bathocuproine forms a highly ohmic contact between a wide variety of semiconducting materials and metal electrodes. This enables performance and stability improvements in a range of electronic devices.</p>
Kumar M, Georgiadou DG, Seitkhan A, et al., 2019, Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions, ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Nam S, Chaudhry MU, Tetzner K, et al., 2019, Efficient and Stable Solution-Processed Organic Light-Emitting Transistors Using a High-k Dielectric, ACS PHOTONICS, Vol: 6, Pages: 3159-3165, ISSN: 2330-4022
Lin YH, Li W, Faber H, et al., 2019, Hybrid organic–metal oxide multilayer channel transistors with high operational stability, Nature Electronics, Vol: 2, Pages: 587-595
© 2019, The Author(s), under exclusive licence to Springer Nature Limited. Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. Commercial devices currently rely on metal oxides processed via physical vapour deposition methods, but the use of solution-based processes could provide a simpler, higher-throughput approach that would be more cost effective. However, creating oxide transistors with high carrier mobility and bias-stable operation using such processes has proved challenging. Here we show that transistors with high electron mobility (50 cm2 V−1 s−1) and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide. Insertion of the ozone-treated polystyrene interlayer passivates electron traps in the channel and reduces bias-induced instability during continuous transistor operation over a period of 24 h and under a high electric-field flux density (2.1 × 10−6 C cm−2). Furthermore, incorporation of the pre-synthesized aluminium-doped zinc oxide nanoparticles enables controlled n-type doping of the hybrid channels, providing additional control over the operating characteristics of the transistors.
Chen H, Wadsworth A, Ma C, et al., 2019, The Effect of Ring Expansion in Thienobenzo[b]indacenodithiophene Polymers for Organic Field-Effect Transistors, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 141, Pages: 18806-18813, ISSN: 0002-7863
Chaudhry MU, Panidi J, Nam S, et al., 2019, Polymer Light-Emitting Transistors With Charge-Carrier Mobilities Exceeding 1 cm(2) V-1 s(-1), ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Neophytou M, De Bastiani M, Gasparini N, et al., 2019, Enhancing the Charge Extraction and Stability of Perovskite Solar Cells Using Strontium Titanate (SrTiO3) Electron Transport Layer, ACS APPLIED ENERGY MATERIALS, Vol: 2, Pages: 8090-8097, ISSN: 2574-0962
Faber H, Anthopoulos TD, 2019, Adding a new layer to 'more than Moore', NATURE ELECTRONICS, Vol: 2, Pages: 497-498, ISSN: 2520-1131
Barrit D, Cheng P, Tang M-C, et al., 2019, Impact of the Solvation State of Lead Iodide on Its Two-Step Conversion to MAPbI(3): An In Situ Investigation, ADVANCED FUNCTIONAL MATERIALS, Vol: 29, ISSN: 1616-301X
Li Z, Li H, Jiang K, et al., 2019, Self-Powered Perovskite/CdS Heterostructure Photodetectors, ACS APPLIED MATERIALS & INTERFACES, Vol: 11, Pages: 40204-40213, ISSN: 1944-8244
Yarali E, Koutsiaki C, Faber H, et al., 2019, Recent Progress in Photonic Processing of Metal-Oxide Transistors, ADVANCED FUNCTIONAL MATERIALS, ISSN: 1616-301X
He Q, Shahid M, Wu J, et al., 2019, Fused Cyclopentadithienothiophene acceptor enables ultrahigh short‐circuit current and high efficiency >11% in as‐cast organic solar cells, Advanced Functional Materials, Vol: 29, Pages: 1-7, ISSN: 1616-301X
A new method to synthesize an electron‐rich building block cyclopentadithienothiophene (9H‐thieno‐[3,2‐b]thieno[2″,3″:4′,5′]thieno[2′,3′:3,4]cyclopenta[1,2‐d]thiophene, CDTT) via a facile aromatic extension strategy is reported. By combining CDTT with 1,1‐dicyanomethylene‐3‐indanone endgroups, a promising nonfullerene small molecule acceptor (CDTTIC) is prepared. As‐cast, single‐junction nonfullerene organic solar cells based on PFBDB‐T: CDTTIC blends exhibit very high short‐circuit currents up to 26.2 mA cm−2 in combination with power conversion efficiencies over 11% without any additional processing treatments. The high photocurrent results from the near‐infrared absorption of the CDTTIC acceptor and the well‐intermixed blend morphology of polymer donor PFBDB‐T and CDTTIC. This work demonstrates a useful fused ring extension strategy and promising solar cell results, indicating the great potential of the CDTT derivatives as electron‐rich building blocks for constructing high‐performance small molecule acceptors in organic solar cells.
Lin Y-H, Huang W, Pattanasattayavong P, et al., 2019, Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors, NATURE COMMUNICATIONS, Vol: 10, ISSN: 2041-1723
Ray S, Panidi J, Mukhopadhay T, et al., 2019, Electrochemical Stability and Ambipolar Charge Transport in Diketopyrrolopyrrole-Based Organic Materials, ACS APPLIED ELECTRONIC MATERIALS, Vol: 1, Pages: 2037-2046, ISSN: 2637-6113
Anthopoulos TD, 2019, Ultrathin channels make transistors go faster, NATURE MATERIALS, Vol: 18, Pages: 1033-1034, ISSN: 1476-1122
Lin Y, Adilbekova B, Firdaus Y, et al., 2019, 17% Efficient Organic Solar Cells Based on Liquid Exfoliated WS2 as a Replacement for PEDOT:PSS, ADVANCED MATERIALS, Vol: 31, ISSN: 0935-9648
Seitkhan A, Neophytou M, Kirkus M, et al., 2019, Use of the Phen-NaDPO:Sn(SCN)(2) Blend as Electron Transport Layer Results to Consistent Efficiency Improvements in Organic and Hybrid Perovskite Solar Cells, ADVANCED FUNCTIONAL MATERIALS, Vol: 29, ISSN: 1616-301X
Panidi J, Kainth J, Paterson AF, et al., 2019, Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors, Advanced Functional Materials, Vol: 29, Pages: 1-10, ISSN: 1616-301X
KGaA, Weinheim Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p-type dopants, work on their n-type counterparts is comparatively limited. Here, reported is the previously unexplored n-dopant (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl- 13,18[1′,2′]-benzenobisbenzimidazo [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazo-cine potassium triflate adduct (DMBI-BDZC) and its application in organic thin-film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2′-bithiophene)] and a small-molecule naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) are used to study the effectiveness of DMBI-BDZC as a n-dopant. N-doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI-BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n-doping activity of DMBI-BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground-state electron transfer as the main doping mechanism. The work highlights DMBI-BDZC as a promising n-type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.
Zheng X, Troughton J, Gasparini N, et al., 2019, Quantum Dots Supply Bulk- and Surface-Passivation Agents for Efficient and Stable Perovskite Solar Cells, JOULE, Vol: 3, Pages: 1963-1976, ISSN: 2542-4351
Ma C, Liu C, Huang J, et al., 2019, Plasmonic-Enhanced Light Harvesting and Perovskite Solar Cell Performance Using Au Biometric Dimers with Broadband Structural Darkness, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Khan JI, Ashraf RS, Alamoudi MA, et al., 2019, P3HT Molecular Weight Determines the Performance of P3HT:O-IDTBR Solar Cells, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Wu Y, Li M, Wahyudi W, et al., 2019, Performance and Stability Improvement of Layered NCM Lithium-Ion Batteries at High Voltage by a Microporous Al2O3 Sol-Gel Coating, ACS OMEGA, Vol: 4, Pages: 13972-13980, ISSN: 2470-1343
Lin Y, Yu L, Xia Y, et al., 2019, One-Step Blade-Coated Highly Efficient Nonfullerene Organic Solar Cells with a Self-Assembled Interfacial Layer Enabled by Solvent Vapor Annealing, SOLAR RRL, Vol: 3, ISSN: 2367-198X
Paterson AF, Faber H, Savva A, et al., On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors., Adv Mater, Pages: e1902291-e1902291
Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n-type OECTs, the first demonstration of source/drain-electrode surface modification for achieving state-of-the-art n-type OECTs is reported. Specifically, thiol-based self-assembled monolayers (SAMs), 4-methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n-type accumulation-mode OECTs made from the hydrophilic copolymer P-90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three-fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM-enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n-type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n-type OECTs.
Bristow H, Thorley KJ, White AJP, et al., Impact of Nonfullerene Acceptor Side Chain Variation on Transistor Mobility, ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Karuthedath S, Firdaus Y, Liang R-Z, et al., 2019, Impact of Fullerene on the Photophysics of Ternary Small Molecule Organic Solar Cells, ADVANCED ENERGY MATERIALS, Vol: 9, ISSN: 1614-6832
Bottacchi F, Bottacchi S, Anthopoulos TD, 2019, A novel method for surface coverage spectroscopy with atomic force microscope: theory, modeling and experimental results for cylindrical nanostructures
A novel method for measuring the surface coverage of randomly distributedcylindrical nanoparticles such as nanorods and nanowires, using atomic forcemicroscopy (AFM), is presented. The method offers several advantages overexisting techniques such as particle beam and x-ray diffraction spectroscopy.These include, subnanometer vertical and lateral resolution, non destructiveinteraction with the sample surface allowing repeated measurements,user-friendly setup and ambient operating conditions. The method relies on theuse of a statistical model to describe the variations of the nanoparticlesaggregates height as a function of x,y position on the sample surface measuredby AFM. To verify the validity of the method we studied two types of randomlyoriented networks of carbon nanotubes (CNTs) and silver nanowires (Ag NWs) bothprocessed from solution phase. Experimental results are found to be inexcellent agreement with model predictions whilst analysis of the measuredsurface height density, together with the nanoparticle diameter statisticaldistribution, allow the extraction of the coverage coefficients for alldetected nanoparticle aggregates as well as for the total surface coverage. Themethod can be seen as a new powerful tool for the quantitative surface coverageanalysis of arbitrary nanoscale systems.
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