Publications
506 results found
Woebkenberg PH, Ball J, Kooistra FB, et al., 2008, Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951
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- Citations: 102
Woebkenberg PH, Bradley DDC, Kronholm D, et al., 2008, High mobility n-channel organic field-effect transistors based on soluble C<sub>60</sub> and C<sub>70</sub> fullerene derivatives, SYNTHETIC METALS, Vol: 158, Pages: 468-472, ISSN: 0379-6779
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- Citations: 136
Wobkenberg PH, Ball J, Bradley DDC, et al., 2008, Fluorine containing C<sub>60</sub> derivatives for high-performance electron transporting field-effect transistors and integrated circuits, APPLIED PHYSICS LETTERS, Vol: 92, ISSN: 0003-6951
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- Citations: 24
Campoy-Quiles M, Ferenczi T, Agostinelli T, et al., 2008, Morphology evolution via self-organization and lateral and vertical diffusion in polymer: fullerene solar cell blends, NATURE MATERIALS, Vol: 7, Pages: 158-164, ISSN: 1476-1122
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- Citations: 1360
Ball J, Wöbkenberg PH, Colléaux F, et al., 2008, Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors, Pages: 20-25, ISSN: 0272-9172
Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.
Anthopoulos TD, Woebkenberg PH, Bradley DDC, 2008, Light-sensing ambipolar organic transistors for optoelectronic applications, Conference on Organic Optoelectronics and Photonics III, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
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- Citations: 1
Pang H, Vilela F, Skabara PJ, et al., 2007, Advantageous 3D ordering of π-conjugated systems:: A new approach towards efficient charge transport any direction, ADVANCED MATERIALS, Vol: 19, Pages: 4438-+, ISSN: 0935-9648
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- Citations: 54
Nguyen TD, Sheng Y, Wohlgenannt M, et al., 2007, On the role of hydrogen in organic magnetoresistance:: A study of C<sub>60</sub> devices, SYNTHETIC METALS, Vol: 157, Pages: 930-934, ISSN: 0379-6779
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- Citations: 25
Anthopoulos TD, 2007, Electro-optical circuits based on light-sensing ambipolar organic field-effect transistors, APPLIED PHYSICS LETTERS, Vol: 91, ISSN: 0003-6951
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- Citations: 78
Anthopoulos TD, Anyfantis GC, Papavassiliou GC, et al., 2007, Air-stable ambipolar organic transistors, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951
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- Citations: 186
Smits ECP, Setayesh S, Anthopoulos TD, et al., 2007, Near-infrared light-emitting ambipolar organic field-effect transistors, ADVANCED MATERIALS, Vol: 19, Pages: 734-+, ISSN: 0935-9648
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- Citations: 134
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2007, Subpicosecond photoinduced Stark spectroscopy in fullerene-based devices, PHYSICAL REVIEW B, Vol: 75, ISSN: 2469-9950
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- Citations: 14
Anthopoulos TD, Singh B, Marjanovic N, et al., 2006, High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films, Applied Physics Letters, Vol: 89
de Haas MP, Warman JM, Anthopoulos TD, et al., 2006, The mobility and decay kinetics of charge carriers in pulse-ionized microcrystalline PCBM powder, ADVANCED FUNCTIONAL MATERIALS, Vol: 16, Pages: 2274-2280, ISSN: 1616-301X
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- Citations: 58
Warman JM, de Haas MP, Anthopoulos TD, et al., 2006, The negative effect of high-temperature annealing on charge-carrier lifetimes in microcrystalline PCBM, ADVANCED MATERIALS, Vol: 18, Pages: 2294-+, ISSN: 0935-9648
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- Citations: 40
Anthopoulos TD, Setayesh S, Smits E, et al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, ADVANCED MATERIALS, Vol: 18, Pages: 1900-+, ISSN: 0935-9648
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- Citations: 213
Smits ECP, Anthopoulos TD, Setayesh S, et al., 2006, Ambipolar charge transport in organic field-effect transistors (Article no.205316), Physical Review B (Condensed Matter and Materials Physics), Vol: 73, Pages: 1-9, ISSN: 1098-0121
Smits ECP, Anthopoulos TD, Setayesh S, et al., 2006, Ambipolar charge transport in organic field-effect transistors, PHYSICAL REVIEW B, Vol: 73, ISSN: 2469-9950
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- Citations: 149
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2006, Photoinduced transient stark spectroscopy in organic semiconductors: A method for charge mobility determination in the picosecond regime, PHYSICAL REVIEW LETTERS, Vol: 96, ISSN: 0031-9007
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- Citations: 67
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2006, Ultrafast optoelectronic probing of charge carrier mobility in organic devices
We report sub-picosecond charge mobility measurements in an organic semiconductor obtained by probing with ultrashort pulses the temporal evolution of the electroabsorption signal following ultrafast charge generation. © Optical Society of America.
Cabanillas-Gonzalez J, Virgili T, Gambetta A, et al., 2006, Ultrafast optoelectronic probing of charge carrier mobility in organic devices
We report sub-picosecond charge mobility measurements in an organic semiconductor obtained by probing with ultrashort pulses the temporal evolution of the electroabsorption signal following ultrafast charge generation. © Optical Society of America.
Lo SC, Namdas EB, Shipley CP, et al., 2006, The synthesis and properties of iridium cored dendrimers with carbazole dendrons, Organic Electronics, Vol: 7, Pages: 85-98, ISSN: 1566-1199
Anthopoulos TD, Kooistra FB, Wondergem H, et al., 2006, Air-stable n-channel organic transistors based on a soluble C84 fullerene derivative, Advanced Materials -Deerfield Beach Then Weinheim-, Vol: 18, Pages: 1679-1684, ISSN: 0935-9648
Anthopoulos TD, Setayesh S, Smits E, et al., 2006, Air-stable complementary-like circuits based on organic ambipolar transistors, Advanced Materials, Vol: 18, Pages: 1900-1904, ISSN: 0935-9648
Anthopoulos TD, De Leeuw DM, Setayesh S, et al., 2005, Integrated complementary-like circuits based on organic amblpolar transistors, Pages: 434-439, ISSN: 0272-9172
We report on an approach towards integrated complementary-like circuits based on organic ambipolar transistors. In particular, we show that ambipolar transport can be achieved within a single transistor channel using gold electrodes and a solution processable polymer-small molecule blend as the electroactive material. To demonstrate the suitability of these devices for practical utilisation in logic circuits we realise complementary-like voltage inverters comprised entirely of ambipolar transistors. Moreover, by integrating several such inverters we are able to demonstrate more complex circuits such as ring oscillators. © 2005 Materials Research Society.
Namdas EB, Markham JPJ, Anthopoulos TD, et al., 2005, Invited paper: Dendrimers - Efficient solution-processed phosphorescent OLED materials, Pages: 1862-1865, ISSN: 0097-966X
Three aspects of recent dendrimer research are reported. It is shown that highly efficient sky blue phosphorescent devices can be made (external efficiency 10.4%, 11 lm/W at 100 Cd/m2), that blending dendrimers provides a simple way of colour tuning, and finally that luminescence quenching by exciton-exciton annihilation in dendrimer films is weak and can be controlled by the dendrimer generation. These results suggest that dendrimers are very attractive solution processible materials for OLEDs. © 2005 SID.
Anthopoulos TD, Namdas EB, Ruseckas A, et al., 2005, Dendrimers: Efficient solution-processed phosphorescent OLED materials, Pages: 4-7, ISSN: 1083-1312
Dendrimers are an attractive class of solution-processible materials for organic LEDs. Two aspects of recent dendrimer research are reported, giving new insight into the operation of these materials and devices made from them. The first involves the study of triplet-triplet annihilation using intensity-dependent time-resolved luminescence measurements. The dependence of triplet-triplet annihilation on molecular size is studied and suggests annihilation is the result of a Dexter process. The second aspect of the research reported shows how the structure of the dendrimer can be modified so that a host material is not required.
Anthopoulos TD, de Leeuw DM, Cantatore E, et al., 2005, Solution processible organic transistors and circuits based on a C<sub>70</sub> methanofullerene -: art. no. 054503, JOURNAL OF APPLIED PHYSICS, Vol: 98, ISSN: 0021-8979
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- Citations: 95
Lo SC, Anthopoulos TD, Namdas EB, et al., 2005, Encapsulated cores: Host-free organic light-emitting diodes based on solution-processible electrophosphorescent dendrimers, Advanced Materials, Vol: 17, Pages: 1945-1948, ISSN: 0935-9648
A method to control the molecular structure of a single material using solution-processible conjugated dendrimers that demonstrate highly efficient, host-free, dendrimer light-emitting diodes (DLED), was presented. It was studied that a control over the intermolecular interactions can be engineered easily with the result showing zero necessity for the host material. It was also studied that the dendrimers are ideal nanomaterials for the development of high-performance phosphorescence materials for the use in electroluminescence applications. Formulation of host-free dendrimers-based organic light emitting diodes (OLED) is a significant step towards development of simple-to-fabricate, low-cost, high-performance organic light-emitting displays.
Lo SC, Anthopoulos TD, Namdas EB, et al., 2005, Encapsulated cores: Host-free organic light-emitting diodes based on solution-processible electrophosphorescent dendrimers, ADVANCED MATERIALS, Vol: 17, Pages: 1945-+, ISSN: 0935-9648
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- Citations: 142
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