Publications
506 results found
Zhang S, Tang M-C, Nguyen N, et al., 2021, Wide-Band-Gap Mixed-Halide 3D Perovskites: Electronic Structure and Halide Segregation Investigation, ACS APPLIED ELECTRONIC MATERIALS, Vol: 3, Pages: 2277-2285
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- Citations: 7
Paterson AF, Li R, Markina A, et al., 2021, N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR†, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 4486-4495, ISSN: 2050-7526
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- Citations: 17
Tang M-C, Dang HX, Lee S, et al., 2021, Wide and Tunable Bandgap MAPbBr<sub>3-<i>x</i></sub>Cl<i><sub>x</sub></i> Hybrid Perovskites with Enhanced Phase Stability: In Situ Investigation and Photovoltaic Devices, SOLAR RRL, Vol: 5, ISSN: 2367-198X
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- Citations: 23
Maria IP, Paulsen BD, Savva A, et al., 2021, The Effect of Alkyl Spacers on the Mixed Ionic-Electronic Conduction Properties of N-Type Polymers, ADVANCED FUNCTIONAL MATERIALS, Vol: 31, ISSN: 1616-301X
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- Citations: 59
Fallon KJ, Wijeyasinghe N, Leventis A, et al., 2021, Tyrian purple: an ancient natural dye for cross-conjugated n-type charge transport, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 4200-4205, ISSN: 2050-7526
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- Citations: 1
Kim H, Nugraha M, Guan X, et al., 2021, All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> MXene Contacts, ACS NANO, Vol: 15, Pages: 5221-5229, ISSN: 1936-0851
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- Citations: 21
Kafourou P, Park B, Luke J, et al., 2021, One‐step sixfold cyanation of benzothiadiazole acceptor units for air‐stable high‐performance n‐type organic field‐effect transistors, Angewandte Chemie, Vol: 133, Pages: 6035-6042, ISSN: 0044-8249
Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT). An n‐type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with cyanide on a fluorinated precursor, itself prepared by a direct arylation approach. This one‐step chemical modification significantly impacted the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n‐type semiconductor. The electron‐deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n‐type organic field‐effect transistors (OFETs). Solution‐processed OFETs based on TCNBT IDT exhibited a charge‐carrier mobility of up to μe≈0.15 cm2 V−1 s−1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.
Heeney M, Kafourou P, Park B, et al., 2021, One-step six-fold cyanation of benzothiadiazole acceptor Units for air-stable high-performance n-type organic field-effect transistors, Angewandte Chemie International Edition, Vol: 60, Pages: 5970-5977, ISSN: 1433-7851
We report a new high electron affinity acceptor end group for organic semiconductors, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile (TCNBT). An n-type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a six-fold nucleophilic substitution with cyanides on a fluorinated precursor, itself prepared by a direct arylation approach. This one-step chemical modification was found to significantly impact the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n-type semiconductor. The highly electron-deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n-type organic field-effect transistors (OFETs). Solution-processed OFETs based on TCNBT IDT exhibited a charge carrier mobility of up to µ e ≈ 0.15 cm 2 V -1 s -1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.
Wang B, Scaccabarozzi AD, Wang H, et al., 2021, Molecular doping of near-infrared organic photodetectors for photoplethysmogram sensors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 9, Pages: 3129-3135, ISSN: 2050-7526
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- Citations: 6
Hodsden T, Thorley KJ, Basu A, et al., 2021, The influence of alkyl group regiochemistry and backbone fluorination on the packing and transistor performance of N-cyanoimine functionalised indacenodithiophenes, Materials Advances, Vol: 2, Pages: 1706-1714
The synthesis of two novel n-type molecular organic semiconductors based on a fluorinated indacenodithiophene core in combination with an electron withdrawing N-cyanoimine group is reported, and the influence of the regiochemistry of the solubilizing sidechain is investigated. The N-cyanoimine is confirmed to be a strongly electron accepting group, which in combination with the core fluorination resulted in high electron affinities for both materials. Single crystal analysis demonstrated that whilst both materials arrange in ordered slipped stacks with close π–π stacking distances (∼3.40 Å), significant differences in electron transfer integrals for the two regioisomers were observed, relating to differences in relative molecular displacement along the π-stacking direction. Organic thin-film transistors fabricated via blade-coating displayed electron mobility up to 0.13 cm2 V−1 s−1 for the isomer with the larger transfer integral.
Isikgor FH, Subbiah AS, Eswaran MK, et al., 2021, Scaling-up perovskite solar cells on hydrophobic surfaces, NANO ENERGY, Vol: 81, ISSN: 2211-2855
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- Citations: 34
Karuthedath S, Gorenflot J, Firdaus Y, et al., 2021, Intrinsic efficiency limits in low-bandgap non-fullerene acceptor organic solar cells, NATURE MATERIALS, Vol: 20, Pages: 378-+, ISSN: 1476-1122
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- Citations: 217
Tang M-C, Zhang S, Magnanelli TJ, et al., 2021, Unraveling the compositional heterogeneity and carrier dynamics of alkali cation doped 3D/2D perovskites with improved stability, MATERIALS ADVANCES, Vol: 2
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- Citations: 10
Gedda M, Yengel E, Faber H, et al., 2021, Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors, ADVANCED MATERIALS, Vol: 33, ISSN: 0935-9648
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- Citations: 28
Li Q, Cao Z, Wahyudi W, et al., 2021, Unraveling the New Role of an Ethylene Carbonate Solvation Shell in Rechargeable Metal Ion Batteries, ACS ENERGY LETTERS, Vol: 6, Pages: 69-78, ISSN: 2380-8195
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- Citations: 76
Liu J, Ye G, Potgieser HGO, et al., 2021, Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectrics, ADVANCED MATERIALS, Vol: 33, ISSN: 0935-9648
Gedda M, Faber H, Petridis K, et al., 2021, Metal Halide Perovskites for High-Energy Radiation Detection, Advanced Materials for Radiation Detection, Pages: 119-144, ISBN: 9783030764609
In this chapter, the fundamental principles of high-energy radiation detection and recent progress in the emerging field of metal halide perovskite (MHP)-based direct and indirect X-ray and γ-ray detectors are discussed. The chapter first introduces the underlying principles of high-energy radiation detection, with emphasis on the key performance metrics. This is followed by a comprehensive summary of the recent progress made in the field of perovskite-based radiation detector technologies. Finally, the chapter ends with an overview of current issues and future perspectives on MHP-based direct and indirect (scintillators) radiation detector technologies.
Abdullah I, Emyr Macdonald J, Lin Y-H, et al., 2021, Bias stability of solution-processed In<sub>2</sub>O<sub>3</sub> thin film transistors, JOURNAL OF PHYSICS-MATERIALS, Vol: 4
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- Citations: 6
Barrit D, Zhang Y, Yang T, et al., 2021, Sequential Formation of Tunable-Bandgap Mixed-Halide Lead-Based Perovskites: In Situ Investigation and Photovoltaic Devices, SOLAR RRL, Vol: 5, ISSN: 2367-198X
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- Citations: 12
Firdaus Y, Ho CHY, Lin Y, et al., 2020, Efficient Double- and Triple-Junction Nonfullerene Organic Photovoltaics and Design Guidelines for Optimal Cell Performance, ACS ENERGY LETTERS, Vol: 5, Pages: 3692-3701, ISSN: 2380-8195
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- Citations: 14
Lin Y, Nugraha MI, Firdaus Y, et al., 2020, A Simple n-Dopant Derived from Diquat Boosts the Efficiency of Organic Solar Cells to 18.3%, ACS ENERGY LETTERS, Vol: 5, Pages: 3663-3671, ISSN: 2380-8195
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- Citations: 96
Fan Q, An Q, Lin Y, et al., 2020, Over 14% efficiency all-polymer solar cells enabled by a low bandgap polymer acceptor with low energy loss and efficient charge separation, ENERGY & ENVIRONMENTAL SCIENCE, Vol: 13, Pages: 5017-5027, ISSN: 1754-5692
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- Citations: 152
Xue F, He X, Liu W, et al., 2020, Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric, ADVANCED FUNCTIONAL MATERIALS, Vol: 30, ISSN: 1616-301X
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- Citations: 57
Aljarb A, Fu J-H, Hsu C-C, et al., 2020, Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides, NATURE MATERIALS, Vol: 19, Pages: 1300-+, ISSN: 1476-1122
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- Citations: 84
Basu A, Niazi MR, Scaccabarozzi AD, et al., 2020, Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 8, Pages: 15368-15376, ISSN: 2050-7526
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- Citations: 18
Liu J, van der Zee B, Alessandri R, et al., 2020, N-type organic thermoelectrics: demonstration of <i>ZT</i> > 0.3, NATURE COMMUNICATIONS, Vol: 11
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- Citations: 54
Kakavelakis G, Gedda M, Panagiotopoulos A, et al., 2020, Metal Halide Perovskites for High-Energy Radiation Detection, ADVANCED SCIENCE, Vol: 7
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- Citations: 91
Isakov I, Faber H, Mottram AD, et al., 2020, Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In<sub>2</sub>O<sub>3</sub>Transistors, ADVANCED ELECTRONIC MATERIALS, Vol: 6, ISSN: 2199-160X
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- Citations: 12
Bristow H, Jacoutot P, Scaccabarozzi AD, et al., 2020, Nonfullerene-Based Organic Photodetectors for Ultrahigh Sensitivity Visible Light Detection, ACS APPLIED MATERIALS & INTERFACES, Vol: 12, Pages: 48836-48844, ISSN: 1944-8244
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- Citations: 33
Portilla L, Zhao J, Wang Y, et al., 2020, Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics, ACS NANO, Vol: 14, Pages: 14036-14046, ISSN: 1936-0851
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- Citations: 26
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