Publications
506 results found
Andernach RE, Rossbauer S, Ashraf RS, et al., 2015, Conjugated Polymer-Porphyrin Complexes for Organic Electronics, CHEMPHYSCHEM, Vol: 16, Pages: 1223-1230, ISSN: 1439-4235
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- Citations: 11
Pitsalidis C, Pappa A-M, Hunter S, et al., 2015, Electrospray-Processed Soluble Acenes toward the Realization of High-Performance Field-Effect Transistors, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 6496-6504, ISSN: 1944-8244
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- Citations: 20
Casey A, Han Y, Fei Z, et al., 2015, Cyano substituted benzothiadiazoles: Novel acceptor units allowing systematic lowering of conjugated polymer LUMO levels, Publisher: AMER CHEMICAL SOC, ISSN: 0065-7727
Petti L, Faber H, Muenzenrieder N, et al., 2015, Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits, Applied Physics Letters, Vol: 106, ISSN: 1077-3118
Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.
Labram JG, Lin Y-H, Zhao K, et al., 2015, Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices, Advanced Functional Materials, Vol: 25, Pages: 1727-1736, ISSN: 1616-3028
Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2–24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current–voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2–7.
Faber H, Lin Y-H, Thomas SR, et al., 2015, Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 782-790, ISSN: 1944-8244
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- Citations: 72
Lin YH, Zhao K, Li R, et al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 301-304, ISSN: 1883-2490
We report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.
Jeremy S, Simon H, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 559-561, ISSN: 1883-2490
We report the development of p-channet organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.
Smith J, Hunter S, Anthopoulos TP, 2015, Organic blend semiconductors for high performance thin-film transistor applications, Pages: 47-49, ISSN: 1883-2490
We report the development of p-channel organic small-molecule/polymer blend-based thin-film transistors with high hole mobility. Emphasis is placed on the use of molecular p-dopants as a mean to improve the transistors' operating characteristics as well as the operating frequency of integrated circuits such as multi-stage ring oscillators.
Lin YH, Zhao K, Li R, et al., 2015, Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors, Pages: 1736-1739, ISSN: 1883-2490
We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.
Perumal A, Faber H, Yaacobi-Gross N, et al., 2015, High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer, ADVANCED MATERIALS, Vol: 27, Pages: 93-100, ISSN: 0935-9648
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- Citations: 163
Steiner F, Foster S, Losquin A, et al., 2015, Distinguishing the influence of structural and energetic disorder on electron transport in fullerene multi-adducts, MATERIALS HORIZONS, Vol: 2, Pages: 113-119, ISSN: 2051-6347
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- Citations: 43
Singh R, Pagona G, Gregoriou VG, et al., 2015, The impact of thienothiophene isomeric structures on the optoelectronic properties and photovoltaic performance in quinoxaline based donor-acceptor copolymers, POLYMER CHEMISTRY, Vol: 6, Pages: 3098-3109, ISSN: 1759-9954
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- Citations: 24
Hermerschmidt F, Kalogirou AS, Min J, et al., 2015, 4<i>H</i>-1,2,6-Thiadiazin-4-one-containing small molecule donors and additive effects on their performance in solution-processed organic solar cells, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 2358-2365, ISSN: 2050-7526
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- Citations: 26
Casey A, Han Y, Fei Z, et al., 2015, Cyano substituted benzothiadiazole: a novel acceptor inducing n-type behaviour in conjugated polymers, JOURNAL OF MATERIALS CHEMISTRY C, Vol: 3, Pages: 265-275, ISSN: 2050-7526
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- Citations: 82
Bronstein HA, Falon K, Yaacobi-Gross N, et al., 2015, Novel nature-inspired conjugated polymers for high performance transistors and solar cells, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
Paterson AF, Anthopoulos TD, 2015, Organic blend semiconductors and transistors with hole mobility exceeding 10 cm2/Vs, Conference on Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, ISSN: 0277-786X
Bottacchi F, 2014, Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters, Technical Digest - International Electron Devices Meeting, Pages: 26.4.1-26.4.1, ISSN: 0163-1918
Fei Z, Ashraf RS, Han Y, et al., 2014, Diselenogermole as a novel donor monomer for low band gap polymers, Journal of Materials Chemistry A, Vol: 3, Pages: 1986-1994, ISSN: 2050-7496
Rossbauer S, Muller C, Anthopoulos TD, 2014, Comparative Study of the N-Type Doping Efficiency in Solution-processed Fullerenes and Fullerene Derivatives, ADVANCED FUNCTIONAL MATERIALS, Vol: 24, Pages: 7116-7124, ISSN: 1616-301X
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- Citations: 72
Shoaee S, Mehraeen S, Labram JG, et al., 2014, Correlating Non-Geminate Recombination with Film Structure: A Comparison of Polythiophene: Fullerene Bilayer and Blend Films, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, Vol: 5, Pages: 3669-3676, ISSN: 1948-7185
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- Citations: 9
Fei Z, Pattanasattayavong P, Han Y, et al., 2014, Influence of Side-Chain Regiochemistry on the Transistor Performance of High-Mobility, All-Donor Polymers, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 136, Pages: 15154-15157, ISSN: 0002-7863
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- Citations: 92
Hunter S, Chen J, Anthopoulos TD, 2014, Microstructural Control of Charge Transport in Organic Blend Thin-Film Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 24, Pages: 5969-5976, ISSN: 1616-301X
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- Citations: 58
Yaacobi-Gross N, Treat ND, Pattanasattayavong P, et al., 2014, High-Efficiency Organic Photovoltaic Cells Based on the Solution-Processable Hole Transporting Interlayer Copper Thiocyanate (CuSCN) as a Replacement for PEDOT:PSS, Advanced Energy Materials, Vol: 5, ISSN: 1614-6840
The use of copper thiocyanate (CuSCN) as a universal solution-processable and highly transparent hole-transporting layer in organic bulk-heterojunction photovoltaic cells is demonstrated. When CuSCN is employed as a replacement for the commonly used poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), organic solar cells with maximum power conversion efficiency of 8%, are realized; this value is 1.27 times higher than that for optimized control cells based on PEDOT:PSS.
Thomas SR, Adamopoulos G, Lin Y-H, et al., 2014, High electron mobility thin-film transistors based on Ga<sub>2</sub>O<sub>3</sub> grown by atmospheric ultrasonic spray pyrolysis at low temperatures, APPLIED PHYSICS LETTERS, Vol: 105, ISSN: 0003-6951
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- Citations: 52
Kanimozhi C, Yaacobi-Gross N, Burnett EK, et al., 2014, Use of side-chain for rational design of n-type diketopyrrolopyrrole-based conjugated polymers: what did we find out?, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, Vol: 16, Pages: 17253-17265, ISSN: 1463-9076
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- Citations: 52
Shaw JE, Stavrinou PN, Anthopoulos TD, 2014, High-speed scanning thermal lithography for nanostructuring of electronic devices, NANOSCALE, Vol: 6, Pages: 5813-5819, ISSN: 2040-3364
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- Citations: 5
Kanimozhi C, Naik M, Yaacobi-Gross N, et al., 2014, Controlling Conformations of Diketopyrrolopyrrole-Based Conjugated Polymers: Role of Torsional Angle, JOURNAL OF PHYSICAL CHEMISTRY C, Vol: 118, Pages: 11536-11544, ISSN: 1932-7447
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- Citations: 28
Dhar J, Kanimozhi C, Yaccobi-Gross N, et al., 2014, Selenium in Diketopyrrolopyrrole-based Polymers: Influence on Electronic Properties and Charge Carrier Mobilities, ISRAEL JOURNAL OF CHEMISTRY, Vol: 54, Pages: 817-827, ISSN: 0021-2148
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- Citations: 7
Schroeder BC, Rossbauer S, Kline RJ, et al., 2014, Benzotrithiophene Copolymers: Influence of Molecular Packing and Energy Levels on Charge Carrier Mobility, MACROMOLECULES, Vol: 47, Pages: 2883-2890, ISSN: 0024-9297
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- Citations: 26
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