Publications
506 results found
Yu L, Li X, Smith J, et al., 2012, Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy, JOURNAL OF MATERIALS CHEMISTRY, Vol: 22, Pages: 9458-9461, ISSN: 0959-9428
- Author Web Link
- Cite
- Citations: 20
Shahid M, McCarthy-Ward T, Labram J, et al., 2012, Low band gap selenophene-diketopyrrolopyrrole polymers exhibiting high and balanced ambipolar performance in bottom-gate transistors, Chemical Science, Vol: 3, Pages: 181-185, ISSN: 2041-6520
We report the synthesis of a selenophene-diketopyrrolopyrrole monomer and its co-polymerisation with selenophene and thieno[3,2-b]thiophene monomers by Stille coupling. The resulting low band gap polymers exhibit ambipolar charge transport in organic field effect transistors. High and balanced electron and hole mobilities in excess of 0.1 cm2 V-1 s-1 were observed in bottom-gate, bottom-contact devices, suggesting that selenophene inclusion is a promising strategy for the development of ambipolar organic semiconductors.
Siram RBK, Smith J, Anthopoulos TD, et al., 2012, Acenaphtho[1,2-b]quinoxaline based low band gap copolymers for organic thin film transistor applications, JOURNAL OF MATERIALS CHEMISTRY, Vol: 22, Pages: 4450-4458, ISSN: 0959-9428
- Author Web Link
- Cite
- Citations: 13
Smith JN, Labram JG, Anthopoulos TD, 2012, Semiconducting Organic Molecule/Polymer Composites for Thin-Film Transistors, Semiconducting Polymer Composites, Publisher: Wiley-VCH Verlag GmbH & Co. KGaA, Pages: 219-249, ISBN: 9783527648689
Wolfer P, Santarelli ML, Vaccaro L, et al., 2011, Semiconducting arylacetylene: Insulating polymer blends for organic-based electronic devices, Pages: 1-6, ISSN: 0272-9172
In this contribution we have reported about bi-component blends of readily accessible semiconducting molecular arylacetylenes with insulating high-density polyethylene (HDPE) and poly(vinylidene fluoride) (PVDF) that may exhibit electronic characteristics comparable to those of the neat semiconductors, as measured in field-effect transistors (FETs). © 2012 Materials Research Society.
Labram JG, Kirkpatrick J, Bradley DDC, et al., 2011, Impact of Fullerene Molecular Weight on P3HT:PCBM Microstructure Studied Using Organic Thin-Film Transistors, Adv. Energy Mater., Vol: 1, Pages: 1176-1183, ISSN: 1614-6840
Wolfer P, Santarelli ML, Vaccaro L, et al., 2011, Influence of molecular architecture and processing on properties of semiconducting arylacetylene: Insulating poly(vinylidene fluoride) blends, ORGANIC ELECTRONICS, Vol: 12, Pages: 1886-1892, ISSN: 1566-1199
- Author Web Link
- Cite
- Citations: 20
Bronstein H, Ashraf RS, Kim Y, et al., 2011, Synthesis of a Novel Fused Thiophene-thieno[3,2-b]thiophene-thiophene Donor Monomer and Co-polymer for Use in OPV and OFETs, MACROMOLECULAR RAPID COMMUNICATIONS, Vol: 32, Pages: 1664-1668, ISSN: 1022-1336
- Author Web Link
- Cite
- Citations: 39
Credgington D, Kim Y, Labram J, et al., 2011, Analysis of Recombination Losses in a Pentacene/C60 Organic Bilayer Solar Cell, The Journal of Physical Chemistry Letters, Vol: 2, Pages: 2759-2763, ISSN: 1948-7185
Zhang XR, Richter LJ, DeLongchamp DM, et al., 2011, Molecular Packing of High-Mobility Diketo Pyrrolo-Pyrrole Polymer Semiconductors with Branched Alkyl Side Chains, J AM CHEM SOC, Vol: 133, Pages: 15073-15084, ISSN: 0002-7863
Bronstein H, Leem DS, Hamilton R, et al., 2011, Indacenodithiophene-<i>co</i>-benzothiadiazole Copolymers for High Performance Solar Cells or Transistors via Alkyl Chain Optimization, MACROMOLECULES, Vol: 44, Pages: 6649-6652, ISSN: 0024-9297
- Author Web Link
- Cite
- Citations: 158
Donaghey JE, Ashraf S, Zhang W, et al., 2011, Pyrroloindacenodithiophene containing polymers: Synthesis and characterization, 242nd National Meeting of the American-Chemical-Society (ACS), Publisher: AMER CHEMICAL SOC, ISSN: 0065-7727
Goetz KP, Li Z, Ward JW, et al., 2011, Effect of Acene Length on Electronic Properties in 5-, 6-, and 7-Ringed Heteroacenes, ADVANCED MATERIALS, Vol: 23, Pages: 3698-+, ISSN: 0935-9648
- Author Web Link
- Cite
- Citations: 61
Labram JG, Kirkpatrick J, Bradley DDC, et al., 2011, Measurement of the diffusivity of fullerenes in polymers using bilayer organic field effect transistors, PRB, Vol: 84
Al-Hashimi M, Baklar MA, Colleaux F, et al., 2011, Synthesis, Characterization, and Field Effect Transistor Properties of Regioregular Poly(3-alkyl-2,5-selenylenevinylene), MACROMOLECULES, Vol: 44, Pages: 5194-5199, ISSN: 0024-9297
- Author Web Link
- Cite
- Citations: 42
Agostinelli T, Lilliu S, Labram JG, et al., 2011, Real-Time Investigation of Crystallization and Phase-Segregation Dynamics in P3HT:PCBM Solar Cells During Thermal Annealing, Adv. Funct. Mater., Vol: 21, Pages: 1701-1708, ISSN: 1616-3028
Woebkenberg PH, Eda G, Leem D-S, et al., 2011, Reduced Graphene Oxide Electrodes for Large Area Organic Electronics, ADVANCED MATERIALS, Vol: 23, Pages: 1558-1562, ISSN: 0935-9648
- Author Web Link
- Cite
- Citations: 89
Adamopoulos G, Stuart T, Bradley DDC, et al., 2011, High-mobility low-voltage ZnO transistors based on ZrO2 high-kdielectric grown by spray pyrolysis in ambient air, Advanced Materials, 2011, Vol: 23
Adamopoulos G, Thomas S, Bradley DDC, et al., 2011, Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-kdielectrics deposited by spray pyrolysis in air, Applied Physics letters, 2011, Vol: 98
We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, low voltage 6 V , and hysteresis-free operation with a maximum electron mobility of 34 cm2 / V s and current on/off ratio on the order of 105. This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods
Bronstein H, Chen Z, Ashraf RS, et al., 2011, Thieno[3,2-<i>b</i>]thiophene-Diketopyrrolopyrrole-Containing Polymers for High-Performance Organic Field-Effect Transistors and Organic Photovoltaic Devices, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 133, Pages: 3272-3275, ISSN: 0002-7863
- Author Web Link
- Cite
- Citations: 817
Adamopoulos G, Bashir A, Gillin WP, et al., 2011, Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors, ADVANCED FUNCTIONAL MATERIALS, Vol: 21, Pages: 525-531, ISSN: 1616-301X
- Author Web Link
- Cite
- Citations: 97
Ashraf RS, Chen ZY, Leem DS, et al., 2011, Silaindacenodithiophene Semiconducting Polymers for Efficient Solar Cells and High-Mobility Ambipolar Transistors, CHEM MATER, Vol: 23, Pages: 768-770, ISSN: 0897-4756
Labram JG, Domingo EB, Stingelin N, et al., 2011, In-Situ Monitoring of the Solid-State Microstructure Evolution of Polymer:Fullerene Blend Films Using Field-Effect Transistors, Adv. Funct. Mater., Vol: 21, Pages: 356-363, ISSN: 1616-3028
Faist MA, Keivanidis PE, Foster S, et al., 2011, Effect of Multiple Adduct Fullerenes on Charge Generation and Transport in Photovoltaic Blends with Poly(3-hexylthiophene-2,5-diyl), JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, Vol: 49, Pages: 45-51, ISSN: 0887-6266
- Author Web Link
- Cite
- Citations: 56
Smith J, Heeney M, McCulloch I, et al., 2011, Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors, ORGANIC ELECTRONICS, Vol: 12, Pages: 143-147, ISSN: 1566-1199
- Author Web Link
- Cite
- Citations: 42
Donaghey JE, Ashraf RS, Kim Y, et al., 2011, Pyrroloindacenodithiophene containing polymers for organic field effect transistors and organic photovoltaics, Journal of Materials Chemistry, Vol: 21, Pages: 18744-18752, ISSN: 0959-9428
The synthesis of the novel electron-rich pyrroloindacenodithiophene (NIDT) unit is reported. Stille copolymerization of the distannylated NIDT unit, with the electron-deficient dibrominated benzothiadiazole (BT), difluorobenzothiadiazole (ffBT), thienopyrrolodione (TPD) and 1,1[prime or minute]-bithienopyrrolodione (biTPD) units afforded a series of low band gap semiconducting polymers. Initial testing shows promise for the use of these materials as p-type semiconductors in organic field effect transistors (OFETs) with mobilities as high as 0.07 cm2V-1s-1 being measured. These materials have also been tested as the donor polymer in polymer/fullerene bulk heterojunction organic photovoltaics (OPVs) giving maximum efficiencies of 2.5%.
Fei Z, Kim JS, Smith J, et al., 2011, A low band gap co-polymer of dithienogermole and 2,1,3-benzothiadiazole by Suzuki polycondensation and its application in transistor and photovoltaic cells, JOURNAL OF MATERIALS CHEMISTRY, Vol: 21, Pages: 16257-16263, ISSN: 0959-9428
- Author Web Link
- Open Access Link
- Cite
- Citations: 85
Dalgleish S, Labram JG, Li Z, et al., 2011, Indole-substituted nickel dithiolene complexes in electronic and optoelectronic devices, Journal of Materials Chemistry, Vol: 21, Pages: 15422-15430, ISSN: 0959-9428
The synthesis and full characterisation of a novel indole-substituted nickel dithiolene [Ni(mi-5edt)2] (3) is reported, and compared to its alkyl-substituted analogue [Ni(mi-5hdt)2] (4) that has been previously communicated [Dalgleish et al., Chem. Commun., 2009, 5826] [mi-5edt = 1-(N-methylindol-5-yl)-ethene-1,2-dithiolate; mi-5hdt = 1-(N-methylindol-5-yl)-hex-1-ene-1,2-dithiolate)]. Both complexes are shown to undergo oxidative electropolymerisation, yielding polymer films that retain the redox and optical properties of the monomer. The more soluble analogue 4 is shown to form high quality thin films by spin coating, which have been utilised to fabricate field-effect transistors (FETs) and bulk heterojunction photovoltaic devices (BHJ-PVs). From FET studies, the material shows ambipolar charge transport behaviour, with a maximum carrier mobility of [similar]10-6 cm2 V-1 s-1 for electrons. By using 4 simultaneously as the electron acceptor as well as a NIR sensitiser in BHJ-PVs, the complex is shown to contribute to the photocurrent, extending light harvesting into the NIR region.
Schroeder BC, Nielsen CB, Kim YJ, et al., 2011, Benzotrithiophene Co-polymers with High Charge Carrier Mobilities in Field-Effect Transistors, Chemistry of Materials, Vol: 23, Pages: 4025-4031, ISSN: 0897-4756
Keyworth CW, Chan KL, Labram JG, et al., 2011, The tuning of the energy levels of dibenzosilole copolymers and applications in organic electronics, Journal of Materials Chemistry, Vol: 21, Pages: 11800-11814, ISSN: 0959-9428
An understanding of the structure-function relationships of conjugated polymers is an invaluable resource for the successful design of new materials for use in organic electronics. To this end, we report the synthesis, characterisation and optoelectronic properties of a range of new alternating copolymers of dibenzosilole. Suzuki polycondensation reactions were used to afford a series of eight conjugated materials by the respective combination of either a 3,6- or 2,7-linked 9,9-dioctyldibenzosilole with 3,6-linked-N-octylcarbazole, triarylamine, oxadiazole and triazole monomers. The copolymers were fully characterised using 1H, 13C{1H} NMR spectroscopy, size exclusion chromatography (SEC), differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The photophysical properties were determined using UV-Vis spectroscopy, photoluminescence (PL) measurements, cyclic voltammetry (CV) and photoelectron emission spectroscopy in air (PESA). The spectroscopic and electrochemical measurements were used to determine the materials' HOMO and LUMO energies and the values were correlated with the copolymer composition and structure. A selection of the copolymers (P4, P5 and P8) were evaluated as the active layer within single-layer polymer light emitting diodes (PLEDs), with the configuration: glass/ITO/PEDOT:PSS/emissive layer/Ba/Al, which gave low intensity electroluminescence. The selected copolymers were also evaluated as the organic semiconductor in bottom-gate, bottom-contact organic field effect transistors (OFETs). The best performing devices gave a maximum mobility of 3 [times] 10-4 cm2 V-1 s-1 and on/off current ratios of 105.
This data is extracted from the Web of Science and reproduced under a licence from Thomson Reuters. You may not copy or re-distribute this data in whole or in part without the written consent of the Science business of Thomson Reuters.