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@article{Paterson:2019:10.1002/adma.201900871,
author = {Paterson, AF and Tsetseris, L and Li, R and Basu, A and Faber, H and Emwas, A-H and Panidi, J and Fei, Z and Niazi, MR and Anjum, DH and Heeney, M and Anthopoulos, TD},
doi = {10.1002/adma.201900871},
journal = {Advanced Materials},
title = {Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1},
url = {http://dx.doi.org/10.1002/adma.201900871},
volume = {31},
year = {2019}
}

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TY  - JOUR
AB  - Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
AU  - Paterson,AF
AU  - Tsetseris,L
AU  - Li,R
AU  - Basu,A
AU  - Faber,H
AU  - Emwas,A-H
AU  - Panidi,J
AU  - Fei,Z
AU  - Niazi,MR
AU  - Anjum,DH
AU  - Heeney,M
AU  - Anthopoulos,TD
DO  - 10.1002/adma.201900871
PY  - 2019///
SN  - 0935-9648
TI  - Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1
T2  - Advanced Materials
UR  - http://dx.doi.org/10.1002/adma.201900871
UR  - https://www.ncbi.nlm.nih.gov/pubmed/31074923
UR  - http://hdl.handle.net/10044/1/71993
VL  - 31
ER  -

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