Imperial College London

ProfessorThomasAnthopoulos

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

1111Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Scaccabarozzi:2020:10.1002/aelm.202000539,
author = {Scaccabarozzi, AD and Scuratti, F and Barker, AJ and Basu, A and Paterson, AF and Fei, Z and Solomeshch, O and Petrozza, A and Tessler, N and Heeney, M and Anthopoulos, TD and Caironi, M},
doi = {10.1002/aelm.202000539},
journal = {Advanced Electronic Materials},
pages = {1--9},
title = {Understanding charge transport in high-mobilityp-doped multicomponent blend organic transistors},
url = {http://dx.doi.org/10.1002/aelm.202000539},
year = {2020}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - The use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of highmobility, solutionprocessed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the individual components in enhancing hole transport in the bestperforming ternary blend systems comprising the small molecule 2,7dioctyl[1]benzothieno[3,2b][1]benzothiophene (C8BTBT), the conjugated polymer indacenodithiophenealtbenzothiadiazole (C16IDTBT), and the molecular ptype dopant (C60F48) is investigated. Temperaturedependent charge transport measurements reveal different charge transport regimes depending on the blend composition, crossing from a thermally activated to a bandlike behavior. Using the chargemodulation spectroscopy technique, it is shown that in the case of the pristine blend, holes relax onto the conjugated polymer phase where shallow traps dominate carrier transport. Addition of a small amount of C60F48 deactivates those shallow traps allowing for a higher degree of hole delocalization within the highly crystalline C8BTBT domains located on the upper surface of the blend film. Such synergistic effect of a highly ordered C8BTBT phase, a polymer bridging grain boundaries, and pdoping results in the exceptionally high hole mobilities and bandlike transport observed in this blend system.
AU - Scaccabarozzi,AD
AU - Scuratti,F
AU - Barker,AJ
AU - Basu,A
AU - Paterson,AF
AU - Fei,Z
AU - Solomeshch,O
AU - Petrozza,A
AU - Tessler,N
AU - Heeney,M
AU - Anthopoulos,TD
AU - Caironi,M
DO - 10.1002/aelm.202000539
EP - 9
PY - 2020///
SN - 2199-160X
SP - 1
TI - Understanding charge transport in high-mobilityp-doped multicomponent blend organic transistors
T2 - Advanced Electronic Materials
UR - http://dx.doi.org/10.1002/aelm.202000539
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000567840000001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202000539
ER -