Imperial College London
Alternate

ProfessorThomasAnthopoulos

Faculty of Natural Sciences, Department of Physics

Visiting Professor
 
 
 
//

Contact

 

+44 (0)20 7594 6669thomas.anthopoulos Website

 
 
//

Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
//

Location

 

1111Blackett LaboratorySouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Khim:2017:10.1002/adma.201605837,
author = {Khim, D and Lin, Y-H and Nam, S and Faber, H and Tetzner, K and Li, R and Zhang, Q and Li, J and Zhang, X and Anthopoulos, TD},
doi = {10.1002/adma.201605837},
journal = {Advanced Materials},
title = {Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution},
url = {http://dx.doi.org/10.1002/adma.201605837},
volume = {29},
year = {2017}
}
Download

RIS format (EndNote, RefMan)

TY  - JOUR
AB  - This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li-doped ZnO (In2O3/Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2O3/Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2O3/Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
AU  - Khim,D
AU  - Lin,Y-H
AU  - Nam,S
AU  - Faber,H
AU  - Tetzner,K
AU  - Li,R
AU  - Zhang,Q
AU  - Li,J
AU  - Zhang,X
AU  - Anthopoulos,TD
DO  - 10.1002/adma.201605837
PY  - 2017///
SN  - 0935-9648
TI  - Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
T2  - Advanced Materials
UR  - http://dx.doi.org/10.1002/adma.201605837
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000401170600011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/49001
VL  - 29
ER  -
Download