Imperial College London

Professor WE (Bill) Lee FREng

Faculty of EngineeringInstitute for Security Science & Technology

Co-Director of Institute for Security Science and Technology
 
 
 
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Contact

 

+44 (0)20 7594 6733w.e.lee Website

 
 
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Assistant

 

Ms Denise McGurk +44 (0)20 7594 8864

 
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Location

 

Central LibrarySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Zapata-Solvas:2017:10.1016/j.jeurceramsoc.2017.08.028,
author = {Zapata-Solvas, E and Gomez-Garcia, D and Dominguez-Rodriguez, A and Lee, WE},
doi = {10.1016/j.jeurceramsoc.2017.08.028},
journal = {Journal of the European Ceramic Society},
pages = {47--56},
title = {High temperature creep of 20 vol.% SiC-HfB2 UHTCs up to 2000 °C},
url = {http://dx.doi.org/10.1016/j.jeurceramsoc.2017.08.028},
volume = {38},
year = {2017}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.
AU - Zapata-Solvas,E
AU - Gomez-Garcia,D
AU - Dominguez-Rodriguez,A
AU - Lee,WE
DO - 10.1016/j.jeurceramsoc.2017.08.028
EP - 56
PY - 2017///
SN - 0955-2219
SP - 47
TI - High temperature creep of 20 vol.% SiC-HfB2 UHTCs up to 2000 °C
T2 - Journal of the European Ceramic Society
UR - http://dx.doi.org/10.1016/j.jeurceramsoc.2017.08.028
UR - http://hdl.handle.net/10044/1/50457
VL - 38
ER -