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BibTex format

@article{Lim:2016:10.1103/PhysRevLett.116.043201,
author = {Lim, A and Foulkes, WM and Horsfield, AP and Mason, DR and Schleife, A and Draeger, EW and Correa, AA},
doi = {10.1103/PhysRevLett.116.043201},
journal = {Physical Review Letters},
pages = {1--1},
title = {Electron elevator: excitations across the band gap via a dynamical gap state},
url = {http://dx.doi.org/10.1103/PhysRevLett.116.043201},
volume = {116},
year = {2016}
}

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TY  - JOUR
AB  - We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.
AU  - Lim,A
AU  - Foulkes,WM
AU  - Horsfield,AP
AU  - Mason,DR
AU  - Schleife,A
AU  - Draeger,EW
AU  - Correa,AA
DO  - 10.1103/PhysRevLett.116.043201
EP  - 1
PY  - 2016///
SN  - 0031-9007
SP  - 1
TI  - Electron elevator: excitations across the band gap via a dynamical gap state
T2  - Physical Review Letters
UR  - http://dx.doi.org/10.1103/PhysRevLett.116.043201
UR  - http://www.ncbi.nlm.nih.gov/pubmed/26871327
UR  - https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.116.043201
UR  - http://hdl.handle.net/10044/1/29606
VL  - 116
ER  -

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Matthew Foulkes

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