Summary
Zahid Durrani is a Reader in the Optical and Semiconductor Devices Group, Imperial College, and a Fellow of the Institute of Physics. His recent research interests include single-atom electronic devices, 'beyond CMOS' single-electron and quantum dot devices in silicon. His interests have also included applications of quantum dots towards quantum computing, the use of nanoscale materials for thermoelectric applications, silicon nanocrystals and nanowires, nanodevice fabrication using electron beam and scanning probe lithography, and the electronic properties of semiconductor nanostructures. He has published more than 60 journal papers and book chapters, and 1 book, in electrical engineering, nanotechnology and applied physics. This work has been funded by various programmes of the EU, Japan Science and Technology, and EPSRC U.K. His recent collaborators have included University College London, University of Ilmenau (Germany), IBM Zurich (Switzerland), CSIC Barcelona (Spain), University of Delft (Netherlands), IMEC (Belgium), Swiss Litho (Heidelberg Instruments) (Germany and Switzerland), National Physical Laboratory (UK) and Oxford Instruments (UK). Other collaborations have included University of Cambridge, Hitachi Cambridge Laboratory and University of Southampton in the UK, and Tokyo Institute of Technology, Hitachi Central Research Laboratory, Nagoya University, and Tokyo University of Agriculture and Technology in Japan.
Selected Publications
Journal Articles
Abualnaja F, Wang C, Veigang-Radulescu V-P, et al., 2019, Room-temperature measurement of electrostatically coupled, dopant-atom double quantum dots in point-contact transistors, Physical Review Applied, Vol:12, ISSN:2331-7019, Pages:1-11
Rawlings CD, Ryu YK, Rüegg M, et al., 2018, Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing., Nanotechnology, Vol:29, ISSN:0957-4484
Durrani Z, Jones M, Abualnaja F, et al., 2018, Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography, Journal of Applied Physics, Vol:124, ISSN:0021-8979
Durrani ZAK, Jones ME, Wang C, et al., 2017, Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors, Nanotechnology, Vol:28, ISSN:0957-4484, Pages:1-11
Llobet J, Krali E, Wang C, et al., 2015, Resonant tunnelling features in a suspended silicon nanowire single-hole transistor, Applied Physics Letters, Vol:107, ISSN:1077-3118
Wang C, Jones ME, Durrani ZAK, 2015, Single-electron and quantum confinement limits in length-scaled silicon nanowires, Nanotechnology, Vol:26, ISSN:0957-4484
Durrani ZAK, 2014, Seebeck coefficient of one electron, Journal of Applied Physics, Vol:115, ISSN:0021-8979
Krali E, Durrani ZAK, 2013, Seebeck coefficient in silicon nanowire arrays (vol 102, 143102, 2013), Applied Physics Letters, Vol:103, ISSN:0003-6951
Zaremba-Tymieniecki M, Durrani ZAK, 2011, Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching, Applied Physics Letters, Vol:98, Pages:102113-102113-3
Zaremba-Tymieniecki M, Li C, Fobelets K, et al., 2010, Field-Effect Transistors Using Silicon NanowiresPrepared by Electroless Chemical Etching, Ieee Electron Device Letters, Vol:31, Pages:860-862
Rafiq MA, Durrani ZAK, Mizuta H, et al., 2008, Room temperature single electron charging in single silicon nanochains, Journal of Applied Physics, Vol:103, Pages:053705-053705-4
Rafiq MA, Durrani ZAK, Mizuta H, et al., 2008, Field dependant hopping conduction across silicon nanocrystal films, Journal of Applied Physics, Vol:104, Pages:123710-123710-3
Khalafalla, M A H, Durrani, et al., 2004, Coherent states in a coupled quantum dot nanocrystalline silicon transistor, Applied Physics Letters, Vol:85
Tan, Y T, Kamiya, et al., 2003, Room temperature nanocrystalline silicon single-electron transistors, Journal of Applied Physics, Vol:94, ISSN:0021-8979, Pages:633-637
Durrani ZAK, Irvine AC, Ahmed H, 2000, Coulomb blockade memory using integrated single-electron transistor / metal-oxide-semiconductor transistor gain cells, Ieee Transactions on Electron Devices, Vol:47