Imperial College London
Portrait Picture

Dr Zahid Durrani

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor in Quantum Nanoelectronics
 
 
 
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Contact

 

+44 (0)20 7594 6232z.durrani Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

704Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Rawlings:2018:1361-6528/aae3df,
author = {Rawlings, CD and Ryu, YK and Rüegg, M and Lassaline, N and Schwemmer, C and Duerig, U and Knoll, A and Durrani, ZAK and Wang, C and Liu, D and Jones, ME},
doi = {1361-6528/aae3df},
journal = {Nanotechnology},
title = {Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing.},
url = {http://dx.doi.org/10.1088/1361-6528/aae3df},
volume = {29},
year = {2018}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - The fabrication of high-performance solid-state silicon quantum-devices requires high resolution patterning with minimal substrate damage. We have fabricated room temperature single-electron transistors (SETs) based on point-contact tunnel junctions using a hybrid lithography tool capable of both high resolution thermal scanning probe lithography and high throughput direct laser writing. The best focal z-position and the offset of the tip- and the laser-writing positions were determined in-situ with the scanning probe. We demonstrate < 100 nm precision in the registration between the high resolution and high throughput lithographies. The SET devices were fabricated on degenerately doped n-type > 1020/cm3 silicon on insulator (SOI) chips using a CMOS compatible geometric oxidation process. The characteristics of the three devices investigated were dominated by the presence of Si nanocrystals or phosphorous atoms embedded within the SiO2, forming quantum dots (QDs). The small size and strong localisation of electrons on the QDs facilitated SET operation even at room temperature. Temperature measurements showed that in the range 300 K > T > ~100 K, the current flow was thermally activated but at < 100 K, it was dominated by tunnelling.
AU  - Rawlings,CD
AU  - Ryu,YK
AU  - Rüegg,M
AU  - Lassaline,N
AU  - Schwemmer,C
AU  - Duerig,U
AU  - Knoll,A
AU  - Durrani,ZAK
AU  - Wang,C
AU  - Liu,D
AU  - Jones,ME
DO  - 1361-6528/aae3df
PY  - 2018///
SN  - 0957-4484
TI  - Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing.
T2  - Nanotechnology
UR  - http://dx.doi.org/10.1088/1361-6528/aae3df
UR  - https://www.ncbi.nlm.nih.gov/pubmed/30248025
UR  - http://hdl.handle.net/10044/1/63394
VL  - 29
ER  -
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