Imperial College London
Portrait Picture

Dr Zahid Durrani

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor in Quantum Nanoelectronics
 
 
 
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Contact

 

+44 (0)20 7594 6232z.durrani Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

704Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Durrani:2017:1361-6528/aa5ddd,
author = {Durrani, ZAK and Jones, ME and Wang, C and Liu, D and Griffiths, J},
doi = {1361-6528/aa5ddd},
journal = {Nanotechnology},
pages = {1--11},
title = {Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors},
url = {http://dx.doi.org/10.1088/1361-6528/aa5ddd},
volume = {28},
year = {2017}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.
AU  - Durrani,ZAK
AU  - Jones,ME
AU  - Wang,C
AU  - Liu,D
AU  - Griffiths,J
DO  - 1361-6528/aa5ddd
EP  - 11
PY  - 2017///
SN  - 0957-4484
SP  - 1
TI  - Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors
T2  - Nanotechnology
UR  - http://dx.doi.org/10.1088/1361-6528/aa5ddd
UR  - https://iopscience.iop.org/article/10.1088/1361-6528/aa5ddd
UR  - http://hdl.handle.net/10044/1/46087
VL  - 28
ER  -
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